Preliminary
Datasheet
RJH60D5BDPQ-E0
600V - 37A - IGBT
Application: Inverter
Features
•
Short circuit withstand time (5
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 37 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode (25 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 37 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS0794EJ0300
Rev.3.00
May 23, 2013
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
200
0.63
1.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 1 of 9
RJH60D5BDPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
Symbol
V
BR(CES)
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
V
F
t
rr
Q
rr
I
rr
Min
600
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
—
Typ
—
—
—
—
1.6
2.0
1900
120
60
78
12
36
50
40
130
50
0.40
0.81
1.21
5.0
2.5
25
26
1.3
Max
—
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
Unit
V
μA
μA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μs
V
ns
nC
A
Test Conditions
I
C
=10
μA,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 37 A, V
GE
= 15 V
Note3
I
C
=75 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 37 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 37 A
Rg = 5
Ω
Inductive load
V
CC
≤
360 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/μs
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 2 of 9
RJH60D5BDPQ-E0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
250
100
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
200
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
80
150
60
100
40
50
20
0
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
100
PW
10
0
μ
s
Collector Current I
C
(A)
=
10
150
μ
s
10
100
1
Tc = 25°C
Single pulse
50
0.1
1
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
150
150
Tc = 25
°
C
Pulse Test
15 V
100
18 V
75
50
25
0
0
1
2
3
4
5
V
GE
= 8 V
Typical Output Characteristics
Tc = 150
°
C
Pulse Test
15 V
100
18 V
75
50
V
GE
= 8 V
25
0
0
1
2
3
4
5
10 V
12 V
12 V
Collector Current I
C
(A)
125
Collector Current I
C
(A)
125
10 V
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 3 of 9
RJH60D5BDPQ-E0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 37 A
75 A
3
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150
°
C
Pulse Test
I
C
= 37 A
75 A
3
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
4
2
2
1
4
8
12
16
20
1
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Transfer Characteristics (Typical)
150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.8
V
GE
= 15 V
Pulse Test
2.4
I
C
= 75 A
Collector Current I
C
(A)
125
Tc = 25
°
C
100
75
50
25
0
150
°
C
2.0
37 A
1.6
18.5 A
V
CE
= 10 V
Pulse Test
4
8
12
16
20
0
1.2
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
30
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
8
I
C
= 10 mA
6
25
0
20
15
10
Collector current wave
(Square wave)
4
1 mA
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
5 Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
0
1
10
100
1000
Case Temparature Tc (
°
C)
Frequency f (kHz)
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 4 of 9
RJH60D5BDPQ-E0
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
Preliminary
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (mJ)
100
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
Switching Times t (ns)
tf
100
td(off)
1
Eoff
Eon
td(on)
tr
0.1
10
1
10
100
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
100
td(off)
tf
tr
td(on)
Eoff
1
Eon
10
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 25
°
C
10
100
0.1
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 150
°
C
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
Switching Times t (ns)
td(off)
100
tr
td(on)
tf
Eoff
1
Eon
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 5 of 9
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