Preliminary
Datasheet
RJH60A81RDPD-A0
600V - 5A - IGBT
Application: Inverter
Features
•
Reverse conducting IGBT with monolithic diode
•
Short circuit withstand time (5
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 2.0 V typ. (at I
C
= 5 A, V
GE
= 15 V, Ta = 25°C)
•
Built-in fast recovery diode (t
rr
= 100 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 75 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 5 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS1092EJ0100
Rev.1.00
Jul 04, 2013
Outline
RENESAS Package code: PRSS0004ZK-A
(Package name : TO-252A)
4
C
12
3
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
Ic(peak)
i
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
Tj
Tstg
Note1
Ratings
600
±30
10
5
15
5
15
29.4
4.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/
W
°C
°C
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 1 of 8
RJH60A81RDPD-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V
(BR)CES
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
600
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
Typ
—
—
—
—
2.0
2.9
160
12
6
11
2.5
6.7
30
10
40
75
0.13
0.06
0.19
5.0
Max
—
1
±100
7.5
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μs
Test Conditions
I
C
=10
μA,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0 V
V
GE
= ±30 V, V
CE
= 0 V
V
CE
= 10 V, I
C
= 1 mA
I
C
= 5 A, V
GE
= 15 V
Note3
I
C
= 10 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 5 A
V
CC
= 300V
V
GE
= 15 V
I
C
= 5 A,
Rg = 5
Ω
Inductive load
V
CE
≤
360 V, V
GE
= 15 V
Tj = 100°C
I
F
= 5 A
Note3
I
F
= 5 A
di
F
/dt = 100 A/μs
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
1.9
100
0.18
4.2
—
—
—
—
V
ns
μC
A
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 2 of 8
RJH60A81RDPD-A0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
40
12
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
30
Collector Current I
C
(A)
10
8
6
4
2
0
20
10
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
20
Turn-off SOA
10
10
PW
0
μ
s
Collector Current I
C
(A)
Collector Current I
C
(A)
=
10
15
μ
s
1
10
0.1
Tc = 25°C
Single pulse
5
0.01
1
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
16
16
Tc = 25
°
C
Pulse Test
12
18 V
Typical Output Characteristics
Tc = 150
°
C
Pulse Test
12
18 V
15 V
15 V
Collector Current I
C
(A)
Collector Current I
C
(A)
8
12 V
8
12 V
4
4
V
GE
= 10 V
0
0
V
GE
= 10 V
1
2
3
4
5
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 3 of 8
RJH60A81RDPD-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
6
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
6
5
5
4
4
I
C
= 10 A
3
5A
2
Tc = 150
°
C
Pulse Test
1
8
10
12
14
16
18
20
3
I
C
= 10 A
5A
Tc = 25
°
C
Pulse Test
2
1
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
V
GE
= 15 V
Pulse Test
4
I
C
= 10 A
Typical Transfer Characteristics
16
Collector Current I
C
(A)
Tc = 150°C
12
25°C
8
3
5A
2
3A
4
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
20
1
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
6
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
8
I
C
= 10 mA
5
0
4
3
2
Collector current wave
(Square wave)
6
1 mA
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
1 Tj = 125°C, Tc = 90°C
V
CE
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
0
1
10
100
1000
Case Temparature Tc (°C)
Frequency f (kHz)
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 4 of 8
RJH60A81RDPD-A0
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
1000
Preliminary
Switching Characteristics (Typical) (2)
10
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
Eon
Switching Times t (ns)
tf
100
td(off)
td(on)
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
0.1
Eoff
1
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 5 A, Tc = 150
°
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1
Swithing Energy Losses E (mJ)
1000
Switching Times t (ns)
Eon
tf
100
td(off)
td(on)
tr
1
10
100
0.1
Eoff
10
0.01
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 5 A, Tc = 150
°
C
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
Swithing Energy Losses E (mJ)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 5 A, Rg = 5
Ω
tf
100
td(off)
td(on)
10
tr
Switching Characteristics (Typical) (6)
1
Switching Times t (ns)
Eon
0.1
Eoff
V
CC
= 300 V, V
GE
= 15 V
I
C
=5 A, Rg = 5
Ω
0.01
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 5 of 8
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