Preliminary
Datasheet
RJF0609JSP
60V - 1.5V Silicon N Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS1066EJ0100
Rev.1.00
May 10, 2013
Features
•
•
•
•
•
•
•
•
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code:
PRSP0008DD-D
(Package name:
SOP-8 (FP-8DAV))
8
5
7 6
7
8
5
6
3
1 2
2
4
Current
Limitation
Circuit
Gate
Shut-down
Circuit
4
Gate Resistor
Temperature
Sensing
Circuit
Gate Resistor
Temperature
Sensing
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
Latch
Circuit
Latch
Circuit
1, 3
Source
2, 4
Gate
5, 6, 7, 8
Drain
MOS1
1
MOS2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V
DSS
60
Gate to source voltage
V
GSS
16
Gate to source voltage
V
GSS
–2.5
Note4
Drain current
I
D
1.5
Body-drain diode reverse drain current
I
DR
1.5
Note 3
Avalanche current
I
AP
1.5
Note 3
Avalanche energy
E
AR
9.6
Note 1
Channel dissipation
Pch
1
Note 2
Channel dissipation
Pch
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
3. Tch = 25°C, Rg
≥
50
Ω
4. It provides by the current limitation lower bound value.
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 1 of 7
RJF0609JSP
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 5. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
3.5
—
—
—
—
—
—
—
3.5
1.5
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
Test Conditions
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 5
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
t
os2
Min
—
—
1.5
60
16
–2.5
—
—
—
—
—
—
—
1.1
1.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
2.2
208
142
265
0.55
1.88
3.9
3.7
0.82
71
1.02
0.59
Max
5.4
10
—
—
—
—
100
50
1
–100
—
—
10
2.1
—
350
263
—
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
V
S
mΩ
mΩ
pF
μs
μs
μs
μs
V
ns
ms
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 10 V
Note 6
V
GS
= 1.2 V, V
DS
= 10 V
V
GS
= 12 V, V
DS
= 10 V
Note 6
I
D
= 10 mA, V
GS
= 0
I
G
= 800
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
=– 2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 32 V, V
GS
= 0
Ta = 125°C
I
D
= 1 mA, V
DS
= –0 V
I
D
= 0.7 A, V
DS
= 10 V
Note 6
I
D
= 0.7 A, V
GS
= 4 V
Note 6
I
D
= 0.7 A, V
GS
= 10 V
Note 6
V
DS
= 10 V, V
GS
= 0, f = 1MHz
I
D
= 0.7 A, V
GS
= 10 V
R
L
= 43
Ω
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 7
operation time
I
F
= 1.5 A, V
GS
= 0
I
F
= 1.5 A, V
GS
= 0
di
F
/dt = 50 A/μs
V
GS
= 5 V, V
DD
= 16 V
V
GS
= 5 V, V
DD
= 24 V
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 2 of 7
RJF0609JSP
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0
100
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
Maximum Safe Operation Area
Ta = 25°C
1 shot Pulse
1 Driver Operation
Thermal shut down
operation area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
3.0
10
PW = 1 ms
2.0
2D
riv
er
1
DC
Op
10
er
ati
on
PW
ms
1.0
1D
Op
rive
era
rO
tio
0.1
per
n
atio
n
150
200
Operation
in this area
is limited R
DS(on)
≤1
0s
N
ote
8
0
0
50
100
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 8:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
5
4
5V
6V
8V
10 V
1.5
Pulse Test
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
4V
V
GS
= 3.5 V
1.0
3
2
Tc = 150°C
0.5
25°C
−40°C
1
0
2
4
6
8
10
0
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
300
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
200
V
GS
= 4 V
10 V
100
0.75 A
100
0.5 A
0
0
I
D
= 0.25 A
2
4
6
8
10
10
0.1
1
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 3 of 7
RJF0609JSP
Static Drain to Source On State Resistance
vs. Temperature
I
D
= 0.25 A, 0.5 A, 0.75 A
300
V
GS
= 4 V
Preliminary
Body-Drain Diode Reverse
Recovery Time
1000
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Reverse Recovery Time trr (ns)
400
200
100
100
10 V
I
D
= 0.25 A, 0.5 A, 0.75 A
Pulse Test
0
−50
−25
0
25
50
75 100 125 150
10
0.1
di / dt = 50 A /μs
V
GS
= 0
1
10
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Switching Characteristics
10
td(off)
tf
tr
1
td(on)
Switching Time t (μs)
Capacitance C (pF)
1000
Coss
100
0.1
0.1
V
GS
= 10 V, V
DD
= 30 V
PW = 300
μs,
duty ≤ 1 %
1
10
10
0
10
20
30
40
50
60
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
1.5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Gate to Source Voltage V
GS
(V)
16
14
12
10
8
6
24 V
4
2
0
0.1
1
10
V
DD
= 16 V
2.0
1.0
5V
0.5
V
GS
= 0 V
0
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage V
SD
(V)
Shutdown Time of Load-Short Test Pw (ms)
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 4 of 7
RJF0609JSP
Forward transfer admittance vs.
Drain Current
Forward transfer admittance |yfs| (S)
10
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
200
Ta = –40°C
25°C
1
180
160
150°C
140
120
I
D
= 0.2 A
100
0
2
4
6
8
10
V
DS
= 10 V
Pulse Test
0.1
0.1
1
10
Drain Current I
D
(A)
Normalized Transient Thermal Impedance
γ
s (t)
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
u
tp
lse
θch-f(t)
=
γs
(t) ·
θch
- f
θch-f
= 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
0.001
1s
ho
D=
PW
T
0.0001
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γ
s (t)
10
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
uls
e
θch-f(t)
=
γs
(t) ·
θch
- f
θch-f
= 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
0.001
1s
h
p
ot
D=
PW
T
0.0001
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 5 of 7
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