VISHAY
TSMF1000/1020/1030/1040
Vishay Semiconductors
High Speed IR Emitting Diode in SMD Package
Description
TSMF1000 series are high speed infrared emitting
diodes in GaAlAs/GaAs/GaAlAs double hetero tech-
nology (DH) molded in clear SMD package with dome
lens.
DH chip technology represents best performance for
speed, radiant power, forward voltage and longterm
reliability.
TSMF1000
TSMF1020
TSMF1030
TSMF1040
Features
• High speed
• Extra high radiant power
• Low forward voltage
•
•
•
•
•
•
Suitable for high pulse current operation
Angle of half intensity
ϕ
= ± 17°
Peak wavelength
λ
p
= 870 nm
Longterm reliability
Matched with PIN Photodiode TEMD1000
Versatile terminal configurations
16758
Applications
IrDA compatible data transmission
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
≤
5sec
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
0.8
190
100
- 40 to + 85
- 40 to + 100
<260
400
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Test condition
I
F
= 20 mA
I
F
= 1 A, t
p
= 100
µs
I
F
= 1.0mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
V
F
TK
VF
I
R
C
j
160
Min
Typ.
1.3
2.4
- 1.7
10
Max
1.5
Unit
V
V
mV/K
µA
pF
Document Number 81061
Rev. 6, 21-May-03
www.vishay.com
1
TSMF1000/1020/1030/1040
Vishay Semiconductors
Parameter
Radiant Intensity
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Test condition
I
F
= 20 mA
I
F
= 100 mA, t
p
= 100
µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
Symbol
I
e
I
e
φ
e
TK
φe
ϕ
λ
p
∆λ
TK
λp
t
r
t
f
Min
2.5
Typ.
5
25
35
- 0.6
± 17
870
40
0.2
30
30
Max
VISHAY
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
10000
200
P
V
- Power Dissipation ( mW )
180
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°
C )
I
F
- Forward Current ( mA )
t
p
/T = 0.005
1000
0.01
T
amb
< 60°C
0.02
0.05
100
0.2
0.5
DC
0.1
10
1
0.01
95 9985
0.1
1
10
100
16187
t
p
- Pulse Length ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
10
4
120
I
F
- Forward Current ( mA )
I
F
- Forward Current ( mA)
100
80
60
40
20
0
10
3
10
2
10
1
10
0
0
10 20 30 40 50
60 70 80 90 100
94 8880
0
1
2
3
4
16188
T
amb
- Ambient Temperature (
°
C )
V
F
- Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 81061
Rev. 6, 21-May-03
VISHAY
TSMF1000/1020/1030/1040
Vishay Semiconductors
1.6
1.2
V
Frel
- Relative Forward Voltage
1.1
I
e rel
,
Φ
e rel
I
F
= 10 mA
1.0
0.9
1.2
I
F
= 20 mA
0.8
0.8
0.7
0
20
40
60
80
100
0.4
0
-10 0 10
94 7993 e
50
100
140
94 7990 e
T
amb
- Ambient Temperature (
°
C )
T
amb
- Ambient Temperature (
°
C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
I
e
- Radiant Intensity ( mW/sr )
Φ
ˇ
e rel
- Relative Radiant Power
1.25
1.0
100
0.75
0.5
10
1
0.25
I
F
= 100 mA
0
820
870
λ
-
Wavelength ( nm )
920
0.1
10
0
16189
10
1
10
2
10
3
10
4
15821
I
F
- Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
1000
Φ
e
- Radiant Power ( mW )
S
rel
- Relative Sensitivity
0°
10°
20
°
30°
100
1.0
0.9
0.8
0.7
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
10
1
0.1
10
0
94 8007
10
1
10
2
10
3
I
F
- Forward Current ( mA )
10
4
94 8248
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81061
Rev. 6, 21-May-03
www.vishay.com
3
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
