电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UR4KB80C2

产品描述Rectifier Diode, 4 Element, 4A, 800V V(RRM),
产品类别分立半导体    二极管   
文件大小196KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

UR4KB80C2概述

Rectifier Diode, 4 Element, 4A, 800V V(RRM),

UR4KB80C2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
配置BRIDGE, 4 ELEMENTS
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流135 A
元件数量4
最高工作温度150 °C
最大输出电流4 A
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压800 V
表面贴装NO
端子面层Matte Tin (Sn)
处于峰值回流温度下的最长时间NOT SPECIFIED

UR4KB80C2文档预览

UR4KB60 thru UR4KB100
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for printed circuit board
- High case dielectric strength
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
D3K
MECHANICAL DATA
Case:
D3K
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.24 g (approximately)
Mounting Torque:
0.8 N.M max.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward current Without heat sink T
C
=120℃
60Hz sine wave resistance load
With heat sink T
C
=138℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating of fusing ( t < 8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum DC reverse current at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
R
θJL
R
θJA
T
J
T
STG
UR4KB
60
600
420
600
UR4KB
80
800
560
800
2
4
135
75
1.0
10
8.2
9.3
14
- 55 to +150
- 55 to +150
O
UR4KB
100
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
UR4KBx0
(Note 1)
PACKING CODE
GREEN COMPOUND
CODE
C2
Suffix "G"
D3K
1,500 / BOX
PACKAGE
PACKING
Note 1: "x" defines voltage from 600V (UR4KB60) to 1000V (UR4KB100)
EXAMPLE
PREFERRED P/N
UR4KB60 C2
UR4KB60 C2G
PART NO.
UR4KB60
UR4KB60
PACKING CODE
C2
C2
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
5
4
FIG.1 FORWARD CURRENT DERATING CURVE
140
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
120
100
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
(JEDEC Method)
AVERAGE FORWARD
A
CURRENT (A)
With heat sink
3
2
1
0
0
25
50
75
100
125
150
Without heat sink
CASE TEMPERATURE (
o
C)
PEAK FORWARD SURGE
CURRENT (A)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
1000
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE
A
CURRENT (μA)
TJ=125℃
TJ=125℃
10
INSTANTANEOUS FORWARD
A
CURRENT (A)
10
100
TJ=25℃
1
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
FIG. 5 FORWARD POWER DISSIPATION
7
6
POWER DISSIPATION(W)
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
FORWARD RECTIFIED CURRENT Io (A)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
13.50
0.70
11.70
10.50
11.70
1.10
3.51
6.70
1.10
1.05
0.66
2.90
2.40
3.10
1.00
0.40
1.80
0.40
Max
14.10
1.40
12.30
11.10
12.30
1.40
4.11
7.30
1.50
1.25
0.86
3.30
2.80
3.40
1.40
0.80
2.40
0.60
Unit (inch)
Min
0.531
0.028
0.461
0.413
0.461
0.043
0.138
0.264
0.043
0.041
0.026
0.114
0.094
0.122
0.039
0.016
0.071
0.016
Max
0.555
0.055
0.484
0.437
0.484
0.055
0.162
0.287
0.059
0.049
0.034
0.130
0.110
0.134
0.055
0.031
0.094
0.024
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1312019
Version: J13

UR4KB80C2相似产品对比

UR4KB80C2 UR4KB60C2 UR4KB60C2G UR4KB80C2G
描述 Rectifier Diode, 4 Element, 4A, 800V V(RRM), Rectifier Diode, 4 Element, 4A, 600V V(RRM), Rectifier Diode, 4 Element, 4A, 600V V(RRM), Rectifier Diode, 4 Element, 4A, 800V V(RRM),
是否Rohs认证 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 135 A 135 A 135 A 135 A
元件数量 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C
最大输出电流 4 A 4 A 4 A 4 A
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 800 V 600 V 600 V 800 V
表面贴装 NO NO NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
请教一个异步的问题
时钟CLKA与CLKB,可否这样操作一个信号(en): 时钟CLKA下检测到某条件(A)时,将en置为“1”; 然后时钟CLKB检测到en为高后,输出一个时钟宽度的脉冲,并将en拉低,置为“0”? ......
eeleader FPGA/CPLD
约会春天——来个百花争艳
春光明媚,到处放射着明媚的阳光,到处炫耀着五颜的色彩,到处飞扬着悦耳的鸟叫虫鸣,到处飘荡着令人陶醉的香气。这是绿的世界、花的海洋。 474495 474496 474498 474500 474 ......
刘志霞 聊聊、笑笑、闹闹
大家看了今年国赛的元器件清单,对竞赛题目有什么见解
感觉看了清单,也不是很明白啊,仪器仪表类的是不是侧重到高频上?至少100M?...
18811707971 电子竞赛
2440SPI驱动问题请教。
大家好: 这两天搞SPI驱动,2440的SPI寄存器里面有一个发送数据寄存器和一个读数据寄存器。小弟想请问一下,这两个寄存器都是8位的。 问题: (1)现在如果我写了一个byte的数据到发 ......
lutcn 嵌入式系统
英文简历的几种常见形式
英文简历的几种常见形式英文简历并无固定不变的单一形式,应聘者完全可以根据个人的具体情况来确定采用何种形式,灵活设计。一般来说,根据个人经历的不同侧重点,可以选用以下三种形式: ......
lijiaoeeworld 工作这点儿事
日韩从e到u的国家信息化战略转移
随着无所不在的运算(ubiquitous computing)及移动通讯技术发展,人们逐渐以u(ubiquitous,意指“无所不在”)来取代e用以描述信息化事物,各国也纷纷将“无所不在”作为国家信息化战略发展的 ......
tmily 无线连接

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1690  912  1305  2767  1673  35  19  27  56  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved