SUD45P03-15
Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
Product Summary
V
DS
(V)
–30
30
r
DS(on)
(W)
0.015 @ V
GS
= –10 V
0.024 @ V
GS
= –4.5 V
I
D
(A)
a
"13
"8
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD45P03-15
D
P-Channel MOSFET
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
"13
"8
"100
–13
70
4
a
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Symbol
R
thJA
R
thJC
Typical
Maximum
30
1.8
Unit
_C/W
Notes
a. Calculated Rating for T
A
= 25
_
C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-51
SUD45P03-15
Siliconix
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –5 V, V
GS
= –10 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= –13 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –10 V, I
D
= –13 A, T
J
= 125_C
V
GS
= –4.5 V, I
D
= –13 A
Forward Transconductance
b
g
fs
V
DS
= –15 V, I
D
= –13 A
20
–50
–20
0.012
0.018
0.020
0.015
0.026
0.024
S
W
A
–30
V
–1.0
"100
–1
–50
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State
On State Drain Current
b
I
D( )
D(on)
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –15 V, R
L
= 0.33
W
I
D
^
–45 A, V
GEN
= –10 V, R
G
= 2.4
W
V
DS
= –15 V, V
GS
= –10 V, I
D
= –45 A
V
GS
= 0 V, V
DS
= –25 V, F = 1 MHz
3200
800
280
50
14
6.2
13
10
50
20
20
20
100
40
ns
125
nC
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= –45 A, V
GS
= 0 V
I
F
= –45 A, di/dt = 100 A/ms
1.0
55
100
1.5
100
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-52
SUD45P03-15
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
100
V
GS
= 10, 9, 8 V
80
I
D
– Drain Current (A)
60
40
20
3V
0
2V
0
2
4
6
8
10
0
5V
I
D
– Drain Current (A)
Output Characteristics
7V
6V
80
Transfer Characteristics
T
C
= –55_C
60
25_C
125_C
40
4V
20
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
50
40
g
fs
– Transconductance (S)
30
20
10
0
V
GS
– Gate-to-Source Voltage (V)
0.05
0.04
V
GS
= 4.5 V
0.03
0.02
V
GS
= 10 V
0.01
0
Transconductance
T
C
= –55_C
25_C
r
DS(on)
– On-Resistance (
W
)
On-Resistance vs. Drain Current
125_C
0
10
20
30
40
50
60
0
20
40
60
80
100
I
D
– Drain Current (A)
4500
3600
C – Capacitance (pF)
2700
1800
900
0
C
rss
C
oss
I
D
– Drain Current (A)
10
V
GS
– Gate-to-Source Voltage (V)
8
6
4
2
0
V
DS
= 15 V
I
D
= 45 A
Capacitance
Gate Charge
C
iss
0
5
10
15
20
25
30
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-53
SUD45P03-15
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
2.0
1.6
1.2
0.8
0.4
0
-50 -25
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 45 A
I
S
– Source Current (A)
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
T
J
= 150_C
T
J
= 25_C
10
0
25
50
75
100
125
150
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
T
J
– Junction Temperature (_C)
Thermal Ratings
20
16
I
D
– Drain Current (A)
12
8
4
0
I
D
– Drain Current (A)
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
500
100
Limited
by r
DS(on)
10, 100
ms
10
1 ms
10 ms
1
T
A
= 25_C
Single Pulse
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
100 ms
1s
dc
0
25
50
75
100
125
150
T
A
– Ambient Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
30
Square Wave Pulse Duration (sec)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-54
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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