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2038-15-SM

产品描述UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小333KB,共3页
制造商Bourns
官网地址http://www.bourns.com
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2038-15-SM概述

UNIDIRECTIONAL, SILICON, TVS DIODE

2038-15-SM规格参数

参数名称属性值
包装说明O-LELF-R2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-LELF-R2
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
认证状态Not Qualified
表面贴装YES
技术AVALANCHE
端子形式WRAP AROUND
端子位置END
Base Number Matches1

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*R
oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
Features
Balanced Mini-TRIGARD™
High surge current rating, low insertion loss
Stable breakdown throughout life
RoHS compliant* versions available
(5 mm diameter, 7.5 mm length)
Ideal for board level protection of
broadband circuits
Symmetrical breakdown voltage (L-L, L-G)
Leadless, surface mount for economical
assembly
2038 Series Miniature Symmetrical 3-Electrode Surface Mount Gas Discharge Tube
Bourns offers a symmetrical surface mount (SM) 3-electrode GDT surge protection device. The industry-leading quality and features of the
Bourns
®
miniature-TRIGARD
TM
series GDT continue in the 2038 symmetrical version. The 2038 series is ideal for board level protection of
high bandwidth applications such as xDSL, cable broadband and high speed Ethernet, due to its symmetrical turn on characteristics as well as
high energy-handling capability, long and stable life performance and low capacitance of less than 1 pF. The 2038 series breakdown
voltages are nearly equal line to line as well as line to ground. Bourns
®
Gas Discharge Tubes (GDT) are designed to prevent damage from
transient disturbances by acting as a “crowbar” in creating a virtual short-to-ground circuit during conduction. When an electrical surge
exceeds the defined breakdown voltage level of the GDT, the gas becomes ionized and rapid conduction takes place. When the surge passes
and the system voltage returns to normal levels, the GDT returns to its high-impedance (off) state.
Characteristics
Test Methods per ITU-T (CCITT) K.12 and IEEE C62.31
Characteristic
DC Sparkover ± 25 % @ 100 V/s
L1/L2 to Gnd
(NOTE 1)
Typical Impulse Sparkover
L1/L2 to Gnd
100V/μs
1000V/μs
Characteristic
DC Sparkover ± 25 % @ 100 V/s
L1/L2 to Gnd
(NOTE 1)
Typical Impulse Sparkover
L1/L2 to Gnd
100V/μs
1000V/μs
Model No.
2038-15-SM
2038-20-SM
2038-23-SM
2038-30-SM
2038-35-SM
150 V
200 V
230 V
300 V
350 V
350 V
500 V
2038-42-SM
425 V
575 V
2038-47-SM
450 V
600 V
Model No.
2038-60-SM
500 V
650 V
2038-80-SM
600 V
750 V
2038-110-SM
420 V
470 V
600 V
800 V
1100 V
675 V
850 V
750 V
950 V
850 V
1100 V
1150 V
1400 V
1500 V
1700 V
Impulse Transverse Delay ............................... 100 V/µs............................................................< 50 ns
Insulation Resistance (IR) ............................... 100 V ................................................................> 10
9
Ω
Glow Voltage ................................................... 10 mA................................................................~ 70 V
Arc Voltage ...................................................... 1 A .....................................................................~ 10 V
Glow-Arc Transition Current .......................................................................................................< 0.5 A
Capacitance..................................................... 1 MHz ...............................................................< 1 pF
DC Holdover Voltage
(NOTE 2)
......................... 135 V (80 V for Model 2038-15) .......................< 150 ms
Impulse Discharge Current .............................. 10000 A, 8/20 µs
(NOTE 3)
.................................1 operation min.
5000 A, 8/20 µs .................................................> 10 operations
200 A, 10/1000 µs .............................................> 300 operations
200 A, 10/700 µs ..............................................> 500 operations
10 A, 10/1000 µs ..............................................> 1500 operations
Alternating Discharge Current ......................... 10 Arms, 1 s
(NOTE 3)
........................................1 operation min.
5 Arms, 1 s ........................................................> 10 operations
Operating Temperature............................................................................................................... -40 to +90 °C
Climatic Category (IEC 60068-1)................................................................................................ 40/90/21
Notes:
• 2038-35 UL Recognized
, file E153537, 2038-110 CSA Approved
, file LR93265 (UL 1449).
• The rated discharge current for Mini-TRIGARD™ GDTs is the total current equally divided between each line to ground.
• Surface Mount (SM) parts may show a temporary increase in DCBD after the solder reflow process. Most devices will recover
within 24 hours time. It should be noted that there is no quality defect nor change in protection levels during the temporary change
in DCBD.
• Sparkover limits after life ±30 %. IR >10
8
Ω.
• Operating characteristics per RUS PE-80 and Telcordia GR 1361 available on request.
• At delivery AQL 0.65 Level II, DIN ISO 2859.
1
Line to Line DC Sparkover tolerance typically less than +30 % at 100 V/s.
2
Network applied.
3
DC Sparkover may exceed ±30 % but will continue to protect without venting.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

2038-15-SM相似产品对比

2038-15-SM 2038-20-SM 2038-23-SM 2038-30-SM
描述 UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE
包装说明 O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
针数 2 2 2 2
Reach Compliance Code compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
元件数量 1 1 1 1
端子数量 2 2 2 2
封装主体材料 GLASS GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
端子位置 END END END END
Base Number Matches 1 1 1 1

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