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TS6P06GX0G

产品描述Bridge Rectifier Diode,
产品类别分立半导体    二极管   
文件大小235KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 选型对比 全文预览

TS6P06GX0G概述

Bridge Rectifier Diode,

TS6P06GX0G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T4
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性UL RECOGNIZED
最小击穿电压800 V
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PSFM-T4
最大非重复峰值正向电流150 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流6 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压800 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE

TS6P06GX0G文档预览

TS6P01G thru TS6P07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class
1A
whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@3A
@6A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS6P
01G
50
35
50
TS6P
02G
100
70
100
TS6P
03G
200
140
200
TS6P
04G
400
280
400
6
150
93
1.0
1.1
10
500
1.8
- 55 to +150
- 55 to +150
TS6P
05G
600
420
600
TS6P
06G
800
560
800
TS6P
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
°C/W
°C
°C
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
X0
D2
G
PACKING CODE
SUFFIX
TS6P0xG
(Note 1)
TS-6P
TS-6P
TS-6P
15 / TUBE
Forming
15 / TUBE (Auto)
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (TS6P01G) to 1000V (TS6P07G)
EXAMPLE
PREFERRED P/N
TS6P07G C2
TS6P07G C2G
PART NO.
TS6P07G
TS6P07G
PACKING CODE
C2
C2
G
Green compound
PACKING CODE
SUFFIX
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100
6
AVERAGE FORWARD
A
CURRENT (A)
T
J
=100°C
10
3
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
50
100
150
1
0
CASE TEMPERATURE. (
o
C)
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
PEAK FORWARD SURGE CURRENT (A)
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60Hz
100
INSTANTANEOUS FORWARD CURRENT (A)
100
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
10
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE (V)
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
900
JUNCTION CAPACITANCE (pF)
A
800
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
TS-6P
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit (mm)
Min
29.70
2.30
2.00
0.90
9.80
7.30
19.70
-
3.80
17.00
4.40
3.40
10.80
3.10
2.50
0.65
Max
30.30
2.70
2.40
1.10
10.20
7.70
20.30
4.80
4.20
18.00
4.80
3.80
11.20
3.40
2.90
0.75
Unit (inch)
Min
1.169
0.091
0.079
0.035
0.386
0.287
0.776
-
0.150
0.669
0.173
0.134
0.425
0.122
0.098
0.026
Max
1.193
0.106
0.094
0.043
0.402
0.303
0.799
0.189
0.165
0.709
0.189
0.150
0.441
0.134
0.114
0.030
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410101
Version: J14

TS6P06GX0G相似产品对比

TS6P06GX0G TS6P04GX0 TS6P05GC2 TS6P05GX0G TS6P06GC2
描述 Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 800 V 400 V 600 V 600 V 800 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A
元件数量 4 4 4 4 4
相数 1 1 1 1 1
端子数量 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 6 A 6 A 6 A 6 A 6 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 800 V 400 V 600 V 600 V 800 V
表面贴装 NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
包装说明 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 -

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