VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• True 2 pin package
• Low forward voltage drop
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
1
Cathode
3
Anode
1
Cathode
2
Anode
VS-8E2TH06
VS-8E2TH06FP
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220 FP
8A
600 V
2.5 V
17 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 133 °C
T
C
= 78 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
70
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.1
1.6
0.2
50
6
8
MAX.
-
2.5
1.9
35
350
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93166
Revision: 18-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
I
F
= 8.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
Reverse recovery time
t
rr
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
17
22
22
43
33
3.1
5.2
13
32
120
230
MAX.
23
25
-
-
-
-
-
A
-
-
-
nC
-
ns
UNITS
T
J
= 25 °C
Peak recovery current
I
RRM
T
J
= 125 °C
T
J
= 25 °C
Reverse recovery charge
Q
rr
T
J
= 125 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
-
6
(5)
Case style TO-220
Case style TO-220 FULL-PAK
TYP.
-
2
5
-
0.5
2
0.07
-
MAX.
175
2.4
5.5
70
-
-
-
12
(10)
8E2TH06
8E2TH06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
Thermal resistance,
junction to ambient per leg
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93166
Revision: 18-Aug-10
VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (mA)
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 175 °C
10
T
J
= 125 °C
1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.001
0
100
200
300
400
500
600
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.01
93166_01
V
F
- Forward Voltage Drop (V)
93166_02
V
R
- Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
0
93166_03
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single
pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
93166_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (TO-220)
Document Number: 93166
Revision: 18-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
10
Z
thJC
- Thermal Impedance (°C/W)
1
Single
pulse
(thermal resistance)
0.1
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
93166_05
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Allowable Case Temperature (°C)
170
160
DC
150
140
130
120
110
100
0
2
4
6
8
10
12
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note (1)
Allowable Case Temperature (°C)
180
180
160
140
120
100
80
60
See
note (1)
40
0
2
4
6
8
10
12
Square
wave (D = 0.50)
80 % rated V
R
applied
DC
93166_06
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current (TO-220)
25
RMS limit
93166_07
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss (W)
20
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10
5
0
0
93166_08
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
; Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93166
Revision: 18-Aug-10
VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
60
I
F
= 8 A
50
T
J
= 125 °C
1000
I
F
= 8 A
T
J
= 125 °C
Q
rr
(nC)
t
rr
(ns)
40
100
T
J
= 25 °C
30
20
T
J
= 25 °C
10
100
93166_10
10
100
93166_09
1000
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93166
Revision: 18-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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