Bulletin I27090 rev. D 10/06
IRK. SERIES
STANDARD RECOVERY DIODES
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
RoHS Compliant
MAGN-A-pak™ Power Modules
™
250A
270A
320A
Description
This new IRK series of MAGN-A-paks uses high voltage
power diodes in two basic configurations. The semicon-
ductors are electrically isolated from the metal base ,
allowing common heatsinks and compact assemblies to
be built. They can be interconnected to form single
phase or three phase bridges and the single diode
module can be used in conjunction with the thyristor
modules as a freewheel diode. These modules are
intended for general purpose applications such as
battery chargers, welders and plating equipment and
where high voltage and high current are required (motor
drives, etc.).
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
T
J
IRK.250.. IRK.270.. IRK.320.. Units
250
100
393
7015
7345
246
225
2460
270
100
424
8920
9430
398
363
3980
320
100
502
10110
10580
511
466
5110
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
Up to 2000 Up to 3000 Up to 2000
-40 to 150
C
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1
IRK.250, .270, .320 Series
Bulletin I27090 rev. D 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
08
12
16
20
IRK.320-
24
30
V
RRM
, Maximum repetitive
peak reverse voltage
V
400
800
1200
1600
2000
2400
3000
V
RSM
, Maximum non-repetitive
peak reverse voltage
V
500
900
1300
1700
2100
2500
3100
I
RRM
Max
@ 150°C
mA
50
IRK.250-
IRK.270-
IRK.320-
50
Forward Conduction
Parameters
I
F(AV)
Maximum average forward current
@ Case temperature
I
F(RMS)
Maximum RMS forward current
I
FSM
Maximum peak, one-cycle forward,
non-repetitive surge current
IRK.250 IRK.270 IRK.320
Units Conditions
250
100
393
7015
7345
5900
6180
It
2
270
100
424
8920
9340
7500
7850
398
363
281
257
3980
0.74
0.87
0.94
0.81
1.48
320
100
502
10110
10580
8500
8900
511
466
361
330
5110
0.69
0.86
0.59
0.44
1.28
A
o
180
o
conduction, half sine wave
as AC switch
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
Sinusoidal half wave,
C
A
A
Maximum I
2
t for fusing
246
225
174
159
KA
2
s t = 10ms No voltage Initial T
J
= T
J
max
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
KA
√s
t = 0.1 to 10ms, no voltage reapplied
2
I
√t
2
Maximum I
√t
for fusing
2
2460
0.79
0.92
0.63
0.49
1.29
V
F(TO)1
Low level val. of threshold voltage
V
F(TO)2
High level val. of threshold voltage
r
t1
r
t2
V
FM
Low level forward slope resistance
High level forward slope resistance
Maximum forward voltage drop
V
V
m
Ω
m
Ω
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
FAV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
) T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
FM
=
π
x I
F(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
Blocking
Parameter
I
RRM
V
INS
Max. peak reverse leakage
current
RMS isolation voltage
3000
V
50Hz, circuit to base, all terminals shorted, t =1sec
IRK.250 /.270 /.320
50
Units Conditions
mA
T
J
= 150
o
C
2
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IRK.250, .270, .320 Series
Bulletin I27090 rev. D 10/06
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating
temperature range
Max. storage temperature range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting torque ±10%
MAP to heatsink
busbar to MAP
Approximate weight
0.16
0.125
0.035
IRK.250 / .270 / .320
-40 to 150
Units Conditions
°C
-40 to 150 °C
0.125
K/W
K/W
Per junction, DC operation
4 to 6
8 to 10
800 (30)
wt
Mounting surface flat, smooth and
greased
Per module compound is recommended
A mounting
and the torque should be rechecked after
Nm
a period of 3 hours to allow for the spread
of the compound
g (oz)
ΔR
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.250-
IRK.270-
IRK.320-
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.011
0.011
0.011
90
o
0.015
0.015
0.015
60
o
0.021
0.020
0.020
30
o
0.033
0.033
0.033
Units
K/W
0.009
0.008
0.008
0.010
0.012
0.010
0.014
0.014
0.013
0.020
0.020
0.020
0.032
0.032
0.032
0.007
0.007
0.007
Ordering Information Table
Device Code
IRK
1
D
2
320
3
-
24
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration
Current rating: I
F(AV)
x 10 rounded
Voltage code: Code x 100 = V
RRM
(see Voltage Rating Table)
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3
IRK.250, .270, .320 Series
Bulletin I27090 rev. D 10/06
Outline Table
-
-
-
-
-
IRKD...
IRKC...
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available on request
UL identification number for cathode wire: UL 1385
UL identification number for package: UL 94V0
IRKJ...
IRKE...
Maximum Allowable Case T
emperature (°C)
140
130
120
110
100
90
80
0
50
100
IR
K.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
Maximum Allowable Cas T
e emperature (°C)
150
150
140
130
120
110
30°
100
90
80
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
60°
90°
120°
180°
DC
Conduction Period
IR
K.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
Conduction Angle
30°
60°
90°
120°
180°
200
250
300
150
Average F
orward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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IRK.250, .270, .320 Series
Bulletin I27090 rev. D 10/06
Maximum Average Forward Power Loss (W)
300
250
200
150
100
50
0
0
50
100
150
200
250
Average Forward Current (A)
450
400
350
300
250
200 R
MSLimit
150
100
50
0
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
IR
K.250.. S
eries
T
J
= 150°C
Conduction Period
180°
120°
90°
60°
30°
RMSLimit
Maximum Average F
orward Power Los (W)
s
DC
180°
120°
90°
60°
30°
Conduc tion Angle
IR
K.250.. S
eries
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteris-
tics
Maximum T
ota l Forward Power Loss (W)
600
hS
R
t
Fig. 4 - Forward Power Loss Characteristics
500
400
300
200
100
0
0
50
IR
K.250.. S
eries
Per Junc tion
T
J
= 150°C
180°
(S
ine)
DC
0.
08
K/
0.
W
12
K/
W
A
=
02
0.
W
K/
ta
el
-D
0.2
K/
W
R
0.2
5
K/ W
0. 4
K/ W
0. 6 K
/
W
100 150 200 250 300 350 400
0
T
otal R
MSOutput Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
1200
Ma ximum T
otal Power Lo s (W)
s
1000
800
180°
(S
ine)
180°
(R t)
ec
0.
08
K/
0.
W
1
K/
W
0.1
6K
/W
05
0.
W
K/
R
t hS
/W
3K
0.0
A
K/ W
.01
=0
e lt
-D
600
400
200
0.2
5K
/W
aR
2 x IR
K.250.. S
eries
S
ingle Phase B ge
rid
Connec ted
T
J
= 150°C
0
100
200
300
400
0.35
K/ W
0
0
500
25
50
75
100
125
150
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
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