SIDE VIEW
IRMS6115
TOP VIEW
IRMT6115
Preliminary
C
.116 L .106
(2.95)
(2.70)
115 Kb/s Infrared Data Transceiver
Dimensions in inches (mm)
E
D
.157
(4.00)
E
D
.190
(4.83)
PIN 1
E=Emitter
D=Detector
PIN 1
.138 (3.50)
.374 (9.86)
IRMS6115
IRMT6115
IRMS6115
IRMT6115
FEATURES
• Compliant with IrDA Specification
• Data Rates 9.6 Kb/s to 115 Kb/s,
usable up to 576 Kb/s
• Wide Range of Supply Voltage 2.4 to 5.5 V
• Standby Current 90
µ
A Typical
• Excellent Power Supply Noise Rejection
• Tri-State Receiver Output and TxD Disable
• AC Coupled Transmit Input:
Provides Integrated Protection for Eye Safety
• High DC Ambient Rejection
• Independent LED Supply, Anode Pin Can Take
– up to 9.0 V DC when not Transmitting and
– up to 4.0 V above
V
CC
when Transmitting
• Receiver Latency Less than 100
µ
s
• Slimline Package:
H 4.0 mm x D 4.8 mm x L 9.8 mm
DESCRIPTION
With state of the art submicron BiCMOS circuitry,
coupled with Infineon optoelectronic expertise, the
IRMS6115 and IRMT6115 outperforms its closest
rival. The transmit input is AC coupled, limiting trans-
mit pulse duration to 70 µs, preventing transmitter
damage and continuous LED output.
Absolute Maximum Ratings,
T
A
=25°C (except where noted)
Supply Voltage Range, all states,
V
CC
................................–0.5 to +7.0 V
LED Anode Voltage,
V
LEDA
V
CC
=0 to 5.5 V, not transmitting ...................................–0.5 to +9.0 V
LED Anode Voltage,
V
LEDA
V
CC
=2.4 to 5.5 V, transmitting ............................. –0.5 to
V
CC
+ 4.0 V
Input Current
I
CC
V
CC
=5.0 V, TxD=
V
CC
, transmit ...................................................20 mA
Output RxD Current .......................................................................50 mA
Storage Temperature,
T
S
...................................................– 40 to +100°C
Operating Temperature,
T
O
.................................................– 25 to +85°C
Lead Solder Temperature, Maximum 230°C................................... <10 s
IC Junction Temperature,
T
J
...........................................................125°C
Average IR LED Current,
I
LED
......................................................100 mA
Repetitive Pulsed IR LED Current,
<10 µs,
t
on
<20%, LED Anode=3.3 V,
I
LED(RP)
.........................600 mA
Input Voltage: TxD......................................................– 0.5 to
V
CC
+ 0.5 V
RxD Voltage .............................................................. – 0.5 to
V
CC
+ 0.5 V
Table 1. Pin Functions
Pin no.
1
2
3
4
Function
IR LEDA
IR LEDC
TxD
RxD
Pin no.
5
6
7
8
Function
SD
V
CC
*Do not connect
GND
*Pin 7 internally grounded
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/irdt • 1-800-777-4363
1
May 18 1999-12
Figure 1. Block Diagram
VCC
Pin 6
RxD
Pin 4
VCC
500 KΩ Tri-State
Buffer
Comparator
Lowpass
Filter
25 kHz to
500 kHz
BW
DC Amplifier
REF
ENB
Ambient
Light
Supressor
SD
Pin 5
Regulated Voltage
& Current Source
TxD Input
Disable
IR LED
Gated
Buffer
GND
Pin 8
2
µA
Pull-down
AGC & Signal
Reference
Processor
AGC
Pin
Photodiode
LED
Anode
Pin 1
LED
Cathode
Pin 2
TxD
Pin 3
Current Limited
LED Driver
Theory of operation
The IRMS6115/IRMT6115 Slimline—Infrared Data Transceiver
consists of a detector photodiode, an IR LED transmitter, an IC
containing ambient light suppressor, and Automatic Gain control
circuitry (AGC).
The ambient light suppressor can cancel up to 4.0
mW/cm
2
(typ-
ical) at
2.4 V of DC ambient signal, and up to 1.5
mW/cm
2
(peak-
to-peak) at 120 Hz AC ambient.
The AGC in the IC is to keep the system output constant by
varying the gain to accommodate a wide range of input signals.
It also provides noise immunity in the high noise ambient envi-
ronment.
For normal operation of the transmit and receiver modes, the
Shut Down (SD) pin should be held low. It is recommended
that this pin be connected to GND if Shut Down (SD) mode is
not used.
In receive mode, the receiver output (RxD) which normally
stays high, will go low for duration of the receive pulses. It is a
push-pull CMOS driver capable of driving a standard CMOS or
TTL load. No external pull-up or pull-down resistor is required.
In transmit mode, by asserting the TxD pin above
1
⁄
2
V
CC
will
turn on IR LED transmitter. At the LED Anode (pin 1) connect
this pin to
V
CC
or unregulated power supply (not to exceed
V
CC
+ 4.0 V), through a resistor to set the proper LED current to
reduce the thermal dissipation and to lower LED current.
Table 2. Slimline IRMS6115/IRMT6115 Truth Table
Inputs
SD
TxD
Detector
Outputs
RxD
LED
Off
On
Off
X=don’t care 500 k
Ω
pull-up
state
Undefined
0.4 mW/sr
40 mW/sr
High
Low
High X=don’t care
state
Low High
Low
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/irdt • 1-800-777-4363
2
IRMS6115/IRMT6115
May 18 1999-12
Electrical Characteristics
Table 3. Basic Operating Parameters,
T
A
=25°C (except where noted
)
Parameter
Supported Data Rate
Power Supply Voltage
Maximum LED Anode Voltage
Symbol Min.
—
V
CC
V
LEDA
I
CC1
I
CC1
I
CC2
I
CC3
9.6 K
2.4
—
—
65
—
—
Typ.
—
—
—
0.01
80
100
2.4
Max.
115 K
5.5
V
CC
+4
1.0
90
200
3.6
Unit
Kb/s
V
V
µ
A
µ
A
µ
A
mA
Conditions
1.63 µs or 3/16 clock period
–25°C to +85°C,
V
CC
to
V
SS
V
CC
=2.4 V to 5.5 V
SD=
V
CC
,
V
CC
=2.4 V to 5.5 V
no signal,
V
CC
=2.7 V to 3.3 V
V
CC
=2.7 V to 3.3 V
V
CC
=2.7 V to 3.3 V, No LED resistor,
VLED=3.0 V DC
I
CC
Shut Down Current
(Note 1)
I
CC
Standby Current (Avg.)
I
CC
Receiving Current (Avg.)
I
CC
Transmitting Current (Avg.)
Table 4. I/O Parameters
Parameter
TxD, SD input Capacitance
TxD High Loading
TxD Low Loading
TxD, SD Input Threshold
(Note 1)
SD to RxD Tri-State
SD to RxD Enable
RxD Output High
RxD Output High
RxD Output Low
RxD Ouput Low
RxD Short Circuit
RxD Short Circuit
RxD to
V
CC
Tri-State Impedance
RxD Rise Time
RxD Fall Time
RxD Rise Time
RxD Fall Time
Symbol Min.
—
—
—
—
—
—
V
IH
V
IH
V
IL
V
IL
—
—
—
—
1.0
—
0.8
—
—
4.3
1.9
—
—
—
—
350
12
20
17
30
Typ.
5.0
2.0
—
1.4
35
90
4.6
2.1
0.22
0.17
48
10
500
18
30
25
45
Max.
—
3.0
0.01
2.0
100
200
—
—
0.4
0.3
—
—
650
27
40
40
70
Unit
pF
µ
A
µ
A
V
ns
ns
V
V
V
V
mA
mA
kΩ
ns
ns
ns
ns
Conditions
V
CC
=2.4 V to 5.5 V
TxD=
V
CC
,
V
CC
=2.4 V to 5.5 V
TxD=0,
V
CC
=2.4 V to 5.5 V
V
CC
=2.4 V to 5.0 V
V
CC
=2.4 V to 5.0 V
V
CC
=2.4 V to 5.0 V
V
CC
=5.0 V,
I
OH
=8 mA
V
CC
=2.4 V,
I
OH
=3 mA
V
CC
=5.0 V,
I
OL
=8 mA
V
CC
=2.4 V,
I
OL
=3.0 mA
V
CC
=5.0 V, RxD=0, RxD=V
CC
V
CC
=2.4 V, RxD=0, RxD=V
CC
V
CC
=2.4 V to 5.0 V,
between RxD to
V
CC
V
CC
=5.0 V, Load=15 pF
V
CC
=5.0 V, Load=50 pF
V
CC
=2.4 V, Load=15 pF
V
CC
=2.4 V, Load=50 pF
t
r
t
f
t
r
t
f
Table 5. Receiver Parameters,
T
A
=25
°
C (except where noted)
Parameter
Maximum Data Rate
Receive
1
⁄
2
Angle
Minimum Signal Detect Irradiance
Maximum Signal Detect Irradiance
Maximum Signal Irradiance No detect
Symbol Min.
—
—
E
IHmin
E
Emax
—
9.6
15
—
500
—
—
—
—
—
—
—
Typ.
115.2
—
2.0
1000
—
7.5
4.0
1.0
5.0
2.5
44
Max.
576
—
4.0
—
0.3
—
—
2.0
10
4.0
—
Unit
Kb/s
degree
µW/cm
2
µW/cm
2
Conditions
4.0
µW/cm
2
to 500 mW/cm
2
IrDA
Physical Layer
specification
Bit error rate=10
– 8
, 1.63
µs
pulse
<0.1 pulse per second detect, 1.63
µs
mW/cm
2
Bit error rate=10
– 8
, 1.63
µs
pulse
mW/cm
2
V
CC
=5.0 V
mW/cm
2
V
CC
=2.4 V
µs
pulse
ms
dB/ms
4
µW/cm
2
to 500 mW/cm
2
4
µW/cm
2
to 500 mW/cm
2
at 115 Kb/s
0 to 5 mW/cm
2
ambient input
Following AGC settling at 500 mW/cm
2
IRMS6115/IRMT6115
May 18 1999-12
Maximum DC Ambient Irradiance, 5.0 V —
(Note 7)
Maximum DC Ambient Irradiance, 2.4 V —
(Note 7)
AGC Attack Time
(Note 2)
AGC Settling
(Note 3)
Near-Far Receiver Latency
(Note 4)
AGC Decay Rate
(Note 5)
—
—
—
—
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/irdt • 1-800-777-4363
3
Table 5. Receiver Parameters
(continued)
Parameter
Transmit Receiver Latency
(Note 4)
RxD Suppression Duration
(Note 8)
Powerup Receiver Latency
Output Pulse Width at RxD
Symbol Min.
t
L
—
—
—
—
—
—
1.0
—
50
100
Typ.
50
50
50
1.63
57
100
200
Max.
100
100
100
3.0
100
—
—
Unit
µs
µs
µs
µs
µs
mV/µs
mV/ms
Conditions
0 to 3 mW/cm
2
DC ambient input
Following end of TxD pulse
0 to 3 mW/cm
2
DC ambient input
1.63
µs,
4
µW/cm
2
to 500 mW/cm
2
input.
200
µs,
500 mW/cm
2
,
V
CC
=5.0 V
100 mV
P–P
triangle ww on
V
CC
1.0 V
P–P
triangle wave on
V
CC
Maximum Output Pulse Width at RxD, —
(Note 7)
Small Ripple Power Supply Rejection
(Note 6)
Large Ripple Power Supply Rejection
(Note 6)
—
—
Table 6. Transmitter Output
Parameter
Maximum Data Rate
TxD Radiant Intensity
TxD Radiant Intensity
TxD
1
/
2
Angle
TxD Peak Wavelength
Symbol
—
—
—
—
Min.
9.6
40
—
15
850
1.55
10
35
350
—
—
—
—
Typ.
115.2
150
70
20
870
1.60
—
70
400
+0.47
–0.5
0.3
5.0
Max.
576
500
500
30
900
1.65
600
140
600
—
—
0.4
—
Unit
Kb/s
mW/Sr
mW/Sr
degree
nm
µs
ns
µs
mA
%/
°
C
%/
°
C
V
V⁄µs
Conditions
TxD pulse width=434 ns
(6.8
Ω
LED resistor, 5.0 V
LED
supply)
LEDA=2.4 V, no current limiting LED resistor
IrDA
Physical Layer
specification
I
LED
=350 mA,
λ
peak
—
I
F
=20 mA
TxD=1.63
µs,
V
CC
=5.0 V
I
LED
Pulse Width
Optical Rise and Fall Time
Pulse Width Limit
t
r
,
t
f
—
—
—
—
—
—
V
LED
=2.7 V
TxD pulse>200
µs,
5.0 V pulse,
V
CC
=5.0 V
TxD=
V
CC
, LED anode=3.3 V,
V
CC
=5.0 V
TxD=
V
CC
, LED anode=3.3 V,
V
CC
=5.0 V
I
LED
Limit
I
LED
Limit Temperature Coefficient
LED Temperature Coefficient
LED Cathode Saturation Drop
TxD
V
CC
dV/dt Rejection
I
LED
=300 mA
300 mA,
V
CC
=2.4 V
dV/dt for less than 10% change in TxD output
Note 1:
For Shut Down (SD) current to fall below 1µA requires driving Shut
Down (SD) to within 0.5 V of
V
CC
to ensure cutoff of the PMOS
transistor of the input CMOS totem pole. In most applications this is
not an issue if Shut Down (SD) is driven from a CMOS driver sup-
plied from the same voltage supply
Note 2:
“AGC Attack Time” is the time required for internal AGC (Automatic
Gain Control) attenuation to rise to within 10% of final value.
Note 3:
“AGC Settling” is the number of pulses within 100 µs required for
the output pulse width to settle to 90% of its final value.
Note 4:
“Near-Far Receiver Latency” is the time required for the AGC and
ambient correction circuits to return to maximum sensitivity (Far)
following reception of a maximum (Near) signal or a change in ambi-
ent. “Transmit Receiver Latency” is commonly called “Receiver
Latency” or “Transmitter Turnaround Time.”
Note 5:
“AGC Decay Rate” is the rate at which the receiver gain increases
following the cessation of signal input.
Note 6:
The receiver
V
CC
power supply rejection is significantly better for
small ripple of less than 100 mV
P-P
than for larger values. For ripple
of more than 100 mV
P-P
, internal circuits can maintain operating
headroom provided that the slew rate is significantly slower. Typi-
cally, these specifications allow operation without an external filter
from either switching supplies with less than 50 mV
P–P
ripple or
unregulated supplies with less than 1 V
P–P
of 120 Hz ripple.
Note 7:
If the low going RxD pulse width exceeds 100 µs, then the maxi-
mum DC ambient irradiance has been exceeded.
Note 8:
RxD is suppressed (forced high) while (TxD) transmit pulse is active
and for the indicated period following the end of the TxD pulse.
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/irdt • 1-800-777-4363
4
IRMS6115/IRMT6115
May 18 1999-12
Figure 2. Timing Diagrams
Transmit Mode
5.0 V
SD 0 V
5.0 V
TxD In
0V
Φ
e
Figure 3. Input Schematics
V
CC
TxD
V
CC
V
CC
LED
Optical Signal
Output 5.0 V
RxD Out 0 V
1.6
µs
8.7
µs
Figure 4. Output Schematics
V
CC
500 kΩ
pull-up
Receive Mode
5.0 V
SD 0 V
5.0 V
TxD In 0 V
Ε
e
Optical Signal
Received
V
CC
V
CC
V
CC
V
CC
RxD
5.0 V
1.6
µ
s
8.7
µs
RxD Out 0 V
Latency
5.0 V
SD 0 V
5.0 V
TxD In 0 V
5.0 V
RxD Out 0 V
100
µs
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/irdt • 1-800-777-4363
5
IRMS6115/IRMT6115
May 18 1999-12
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