MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
150V
Forward Current
10A
Max. Junction Temperature
175°C
Dual High-Voltage Schottky Rectifiers
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in high frequency inverters,
free wheeling, and polarity protection applications
TO-220AB (MBR10H150CT)
0.398 (10.10)
0.382 (8.70)
0.055 (1.40)
0.047 (1.20)
0.343 (8.70) Typ.
0.150 (3.80)
0.139 (3.54)
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
Dia.
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.067
(1.70) Typ.
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-262AA
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08oz., 2.24g
0.331 (8.40) Typ.
0.634 (16.10)
0.618 (15.70)
1
0.118
(3.00) Typ.
PIN
2
3
1.161 (29.48)
1.105 (28.08)
0.102 (2.60)
0.087 (2.20)
PIN 1
PIN 2
CASE
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
PIN 3
0.100
(2.54) Typ.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
Dimensions in inches
and (millimeters)
ITO-220AB (MBRF10H150CT)
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
1.21 (3.08)
Dia.
0.108 (2.74)
0.092 (2.34)
TO-262AA (MBRB10H150CT-1)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.398 (10.10)
0.382 (9.70)
0.138 (3.50)
0.122 (3.10)
0.141 (3.58)
0.125 (3.18)
0.633 (16.07)
0.601 (15.67)
0.370 (9.39)
0.354 (8.99)
1
PIN
2
3
1
PIN
2
3
K
0.055 (1.40)
0.039 (1.00)
0.630 (16.00)
0.614 (15.60)
0.370 (9.40)
0.354 (9.00)
0.488 (12.4)
0.472 (12.00)
0.425 (10.80)
0.393 (10.00)
1.164 (29.55)
1.108 (28.15)
0.117 (2.96)
0.101 (2.56)
PIN 1
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.405 (10.28)
0.389 (9.88)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) Typ.
PIN 2
CASE
PIN 3
0.531 (13.48)
0.507 (12.88)
0.058 (1.47) Typ.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
0.062 (1.57)
0.054 (1.37)
0.200 (5.08) Typ.
PIN 1
PIN 3
PIN 2
CASE
0.024 (0.60)
0.018 (0.45)
Document Number 88779
18-Jul-03
www.vishay.com
1
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
MBR10H150CT
150
150
150
10
5
160
1.0
10
11.25
10,000
–65 to +175
4500
(1)
3500
(2)
1500
(3)
Unit
V
V
V
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Total device
(see fig. 1)
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at t
p
= 2µs, 1KH
Z
Peak non-repetitive reverse surge energy per leg
(8/20µs waveform)
Non-repetitive avalanche energy per leg
at 25°C, I
AS
= 1.5A, L=10mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH
≤
30%
I
FSM
I
RRM
E
RSM
E
AS
dv/dt
T
J
, T
STG
V
ISOL
A
A
mJ
mJ
V/µs
°C
V
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg
(4)
at
at
at
at
I
F
=
I
F
=
I
F
=
I
F
=
5.0A, T
J
= 25°C
5.0A, T
J
= 125°C
10A, T
J
= 25°C
10A, T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Symbol
Value
0.88
0.72
0.96
0.80
5.0
1.0
Unit
V
F
V
µA
mA
Maximum reverse current per leg
at working peak reverse voltage
(Note 4)
I
R
Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Typical thermal resistance per leg
Symbol
R
θJC
MBR
2.4
MBRF
4.5
MBRB
2.4
Unit
O
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88779
18-Jul-03
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Derating Curve
(Total)
12
MBR, MBRB
10
MBRF
8
200
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Peak Forward Surge Current (A)
180
160
140
120
100
80
60
40
20
0
1
10
100
T
J
= T
Jmax
8.3ms single half-wave
(JEDEC Method)
Average Forward Current (A)
6
4
2
0
25
50
75
100
125
150
175
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
I
F
-- Instantaneous Forward Current (A)
100
10,000
Fig. 4 – Typical Reverse
Characteristics Per Leg
T
J
= 175°C
1,000
I
R
-- Instantaneous
Reverse Current (µA)
T
J
= 175°C
10
T
J
= 125°C
T
J
= 75°C
1
100
T
J
= 125°C
10
T
J
= 75°C
1
0.1
0.01
T
J
= 25°C
T
J
= 25°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9 1.0 1.1
1.2
10
20
30
40
50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Per Leg
10000
100
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
10
MBRF
MBR, MBRB
1
100
10
0.1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
Document Number 88779
18-Jul-03
t -- Pulse Duration (sec.)
www.vishay.com
3
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
