BAS85
Schottky barrier diode
Rev. 6 — 10 September 2010
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
Device SMD package with tin-plated metal discs at each end. It is suitable for
“automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
Low forward voltage
High breakdown voltage
Guard-ring protected
Hermetically sealed glass SMD package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 100 mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
800
Unit
mA
V
mV
NXP Semiconductors
BAS85
Schottky barrier diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
k
a
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS85
-
Description
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
Type number
4. Marking
Table 4.
BAS85
Marking codes
Marking code
marking band
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
j
T
amb
T
stg
[1]
Parameter
reverse voltage
forward current
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
[1]
Max
30
200
200
300
5
125
+125
+150
Unit
V
mA
mA
mA
A
°C
°C
°C
-
-
-
-
−65
−65
t
p
≤
1 s;
δ ≤
0.5
t
p
= 10 ms
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 10 September 2010
2 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
320
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
[1]
Min
-
-
-
-
-
[1]
Typ
-
-
-
-
-
-
-
Max
240
320
400
500
800
2.3
10
Unit
mV
mV
mV
mV
mV
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 25 V
V
R
= 1 V; f = 1 MHz
-
-
BAS85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 10 September 2010
3 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
mra540
250
I
F(AV)
(mA)
200
10
3
I
F
(mA)
10
2
(1) (2) (3)
mld358
150
10
100
(1)
(2) (3)
1
50
0
0
50
100
T
amb
(°C)
150
10
−1
0
0.4
0.8
V
F
(V)
1.2
FR4 PCB, standard footprint
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Average forward current as a function of
ambient temperature; derating curve
mgc682
(1)
Fig 2.
Forward current as a function of forward
voltage; typical values
12
mgc681
10
5
I
R
(nA)
10
4
C
d
(pF)
8
(2)
10
3
10
2
10
4
1
(3)
10
−1
0
0
10
20
V
R
(V)
30
0
10
20
V
R
(V)
30
(1) T
amb
= 85
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Reverse current as a function of reverse
voltage; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 10 September 2010
4 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
8. Package outline
0.3
3.7
3.3
0.3
1.60
1.45
Dimensions in mm
06-03-16
Fig 5.
Package outline SOD80C
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BAS85
[1]
Package Description
SOD80C
4 mm pitch, 8 mm tape and reel
Packing quantity
2500
-115
10000
-135
For further information and the availability of packing methods, see
Section 13.
BAS85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 10 September 2010
5 of 10
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