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FOD816 Series 4-Pin Phototransistor Optocouplers
July 2005
FOD816 Series
4-Pin Phototransistor Optocouplers
Features
■
■
■
■
■
■
AC input response
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
High current transfer ratio: 600% minimum
Safety agency approvals pending
High input-output isolation voltage of 5000Vrms
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The FOD816 consists of two gallium arsenide infrared emitting
diodes, connected in inverse parallel, driving a silicon photodar-
lington output in a 4-pin dual in-line package.
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
4
CATHODE, ANODE 2
3 EMITTER
1
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Power Dissipation
INPUT
Forward Current
Power Dissipation
OUTPUT
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
V
CEO
V
ECO
I
C
P
C
35
6
80
150
V
V
mA
mW
I
F
P
±50
70
mA
mW
T
STG
T
OPR
T
SOL
P
TOT
-55 to +125
-30 to +100
260 for 10 sec
200
°C
°C
°C
mW
Symbol
Value
Units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FOD816 Series Rev. 1.0.3
FOD816 Series 4-Pin Phototransistor Optocouplers
Electrical/Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
INPUT
Forward Voltage
Terminal Capacitance
OUTPUT
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
(V
CE
= 10 V, I
F
= 0)
(I
C
= 0.1 mA, I
F
= 0)
(I
E
= 10 µA, I
F
= 0)
I
CEO
BV
CEO
BV
ECO
—
35
6
—
—
—
1
—
—
µA
V
V
(I
F
= ±20 mA)
(V = 0, f = 1 kHz)
V
F
C
t
—
—
1.2
50
1.4
250
V
pF
Test Conditions
Symbol
Min
Typ
Max
Unit
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Collector Current
Current Transfer
Ratio
1
Test Conditions
(I
F
= ±1 mA, V
CE
= 2 V)
(I
F
= ±20 mA, I
C
= 5 mA)
(DC500V 40~60% R.H.)
(V = 0, f = 1 MHz)
(V
CE
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
, -3dB)
(V
CE
= 2 V, I
C
= 10 mA, R
L
= 100
Ω
Symbol
I
C
CTR
V
CE (sat)
R
iso
C
f
f
C
t
r
t
f
Min
6
600
—
5x10
10
—
1
—
—
Typ
—
—
0.8
1x10
11
0.6
6
60
53
Max
75
7,500
1
—
1
—
300
250
Unit
mA
%
V
Ω
pF
KHz
µs
µs
Collector-Emitter Saturation Voltage
Isolation Resistance
Floating Capacitance
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Isolation Characteristics
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 min
(V
I-O
= 500 VDC)
(V
I-O
= 0, f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5000
5 x 10
10
Typ
10
11
0.6
Max
Units
Vac(rms)
Ω
1.0
pf
NOTES
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2
FOD816 Series Rev. 1.0.3
www.fairchildsemi.com
FOD816 Series 4-Pin Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves
(T
A
= 25°C Unless otherwise specified.)
60
FORWARD CURRENT IF (mA)
50
40
30
20
10
0
-30
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 1 Forward Current
vs. Ambient Temperature
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature
200
150
100
50
0
-30
100 125
AMBIENT TEMPERATURE TA (°C)
0
25
50
75
100 125
AMBIENT TEMPERATURE TA (°C)
0
25
50
75
Fig. 3 Collector-Emitted Saturation Voltage
vs. Forward Current
8
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
5mA
7mA
Fig. 4 Forward Current vs. Forward Voltage
500
FORWARD CURRENT IF (mA)
7
6
5
4
3
2
1
0
0
30mA
50mA
Ta = 25°C
200
100
50
20
10
5
2
1
Ta = 75°C
50°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FORWARD CURRENT IF (mA)
Ic = 0.5mA
1mA
3mA
25°C
0°C
- 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE VF (V)
CURRENT TRANSFER RATIO CTR ( %)
2000
Fig. 5 Current Transfer Ratio
vs. Forward Current
100
V
CE
= 2V
Ta = 25°C
COLLECTOR CURRENT IC (mA)
Fig. 6 Collector Current
vs. Collector-Emitter Voltage
Ta = 25°C
80
I
F
= 10 mA
Pc(MAX.)
5mA
40
2mA
20
1mA
1600
1200
60
800
400
0
0.1
0.2
0.5
1
2
5
10
0
0
1
2
3
4
5
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
FOD816 Series Rev. 1.0.3
www.fairchildsemi.com
FOD816 Series 4-Pin Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves
(T
A
= 25°C Unless otherwise specified.)
Fig. 7. Relative Current Transfer Ratio
vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
150
RELATIVE CURRENT TRANSFER
RATIO (%)
Fig. 8 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
I
F
= 5mA
V
CE
= 2V
100
I
F
= 20mA
I
C
= 5mA
50
0
-30
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
COLLECTOR DARK CURRENT ICEO (A)
Fig. 9 Collector Dark Current
vs. Ambient Temperature
10
-5
500
Fig. 10. Response Time
vs. Load Resistance
V
CE
= 2V
200
I
C
= 10mA
Ta = 25°C
100
50
20
10
5
2
1
0.5
td
ts
tr
tf
V
CE
= 20V
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
-25
RESPONSE TIME (µs)
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
0.2
0.05
0.1 0.2
0.5
1
2
5
10
LOAD RESISTANCE RL (kΩ)
Fig. 11. Frequency Response
V
CE
= 2V
I
C
= 2mA
Ta = 25°C
Test Circuit for Response Time
Vcc
Input
RD
RL
VOLTAGE GAIN AV (dB)
0
Input
Output
10%
Output
90%
td
ts
tr
tf
-10
R
L
=10kΩ 1kΩ
100Ω
Test Circuit for Frequency Response
Vcc
-20
0.02
0.1
1
10
100
RD
RL
FREQUENCY f (kHz)
Output
4
FOD816 Series Rev. 1.0.3
www.fairchildsemi.com
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