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FMBS549 PNP Low Saturation Transistor
August 2006
FMBS549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continous.
• Sourced from process PB.
tm
NC
C
E
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .S1
Absolute Maximum Ratings *
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
Value
-30
-35
-5
-1
-2
150
- 55 ~ 150
Unit
V
V
V
A
A
°C
°C
Collector Current - Continuous
- Peak Pulse Current
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
*
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation, by R
θJA
Thermal Resistance, Junction to Ambient
Value
700
180
Unit
mW
°C/W
* Device mounted on a 1 in
2
pad of 2 oz copper.
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBS549 Rev. B
FMBS549 PNP Low Saturation Transistor
Electrical Characteristics*
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
T
C
= 25°C unless otherwise noted
Parameter
Conditions
Min.
-30
-35
-5.0
Max.
Units
V
V
V
Collector-Emitter Breakdown Voltage * I
C
= -10mA, I
B
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= -100µA, I
E
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
a
= 100°C
V
EB
= -4.0V, I
C
=0
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1A
V
CE
= -2.0V, I
C
= -2A
V
CE
= -0.8V, I
C
= -500mA
I
C
= -250mA, I
B
= -25mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2.0V
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
-100
-10
-100
nA
µA
nA
On Characteristics *
DC Current Gain
70
100
80
40
100
300
V
CE
(sat)
Collector-Emitter Saturation Voltage
-200
-350
-500
-750
-1.25
-1.0
mV
mV
mV
mV
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characterics
Current Gain Bandwidth Product
Output Capacitance
100
25
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
2
FMBS549 Rev. B
www.fairchildsemi.com
FMBS549 PNP Low Saturation Transistor
Typical Characteristics
Collector- Emitter Voltage vs
Collector current
800
700
4mA
3.5mA
Current Gain vs Collector Current
600
V
ce
= 2.0V
Collector Current, Ic [mA]
500
600
500
400
300
200
100
0
0
1
2
3mA
2.5mA
2mA
1.5mA
1mA
Ib=0.5mA
H
FE
- CURRENT GAIN
400
300
125°C
25°C
200
100
0
0.0001
- 40°C
3
4
5
Collector-Emitter Voltage, Vce[V]
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
BESAT
-BASE-EMITTER SATURATION VOLTAGE(V)
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter On Voltage vs
Collector Current
1.6
V
ce
= 2.0V
Base-Emitter Saturation
Voltage vs Collector Current
1.6
1.4
1.2
1
0.8
0.6
125 °C
25 °C
- 40 °C
1.4
1.2
1
- 40 °C
β = 10
0.8
0.6
25 °C
0.4
0.2
0.0001
125 °C
0.4
0.2
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
- 40°C
Input/Output Capacitance vs
Reverse Bias Voltage
120
f V
ce
= 2.0V
= 1.0MHz
1
0.8
0.6
CAPACITANCE (pf)
125°C
100
C
ibo
80
60
40
20
0
0.1
C
obo
25°C
0.4
0.2
0
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.5 1
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
3
FMBS549 Rev. B
www.fairchildsemi.com
FMBS549 PNP Low Saturation Transistor
Package Dimensions
SuperSOT
TM
-6
Dimensions in Millimeters
4
FMBS549 Rev. B
www.fairchildsemi.com
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