SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC410~KRC414
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
・With
Built-in Bias Resistors.
A
M
B
M
D
3
・Simplify
Circuit Design.
・Reduce
a Quantity of Parts and Manufacturing Process.
・High
Packing Density.
・Suffix
U : Qualified to AEC-Q101.
ex) KRC410-RTK/HU
2
J
1
P
EQUIVALENT CIRCUIT
N
K
N
H
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.00 + 0.20
_ 0.15
1.25 +
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
_
0.42 + 0.10
0.10 MIN
0.1 MAX
C
C
B
R1
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
E
L
G
USM
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
C
T
j
T
stg
RATING
100
150
-55½150
UNIT
mW
℃
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC410
KRC411
Input Resistor
KRC412
KRC413
KRC414
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
Marking
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
UNIT
nA
nA
V
MHz
kΩ
MARK SPEC
TYPE
MARK
KRC410
NK
KRC411
NM
KRC412
NN
KRC413
NO
KRC414
NP
Type Name
Lot No.
2018. 04. 10
Revision No : 5
1/4
KRC410~KRC414
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC410
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC410
I
C
/I
B
=20
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC412
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC412
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2018. 04. 10
Revision No : 5
3/4
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