Datasheet> 器件分类 > 分立半导体> 晶体管> SS9018-I

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SS9018-I: 产品描述RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN; 产品类别分立半导体晶体管; 文件大小71KB，共2页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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SS9018-I概述

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN

SS9018-I规格参数

参数名称	属性值
厂商名称	SAMSUNG(三星)
零件包装代码	TO-92
包装说明	CYLINDRICAL, O-PBCY-T3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.05 A
基于收集器的最大容量	1.7 pF
集电极-发射极最大电压	15 V
配置	SINGLE
最高频带	VERY HIGH FREQUENCY BAND
JEDEC-95代码	TO-92
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	1100 MHz

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SS9018-I相似产品对比

	SS9018-I	SS9018-D	SS9018-G	SS9018-E	SS9018-F	SS9018-H
描述	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
零件包装代码	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
基于收集器的最大容量	1.7 pF	1.7 pF	1.7 pF	1.7 pF	1.7 pF	1.7 pF
集电极-发射极最大电压	15 V	15 V	15 V	15 V	15 V	15 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最高频带	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95代码	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	1100 MHz	1100 MHz	1100 MHz	1100 MHz	1100 MHz	1100 MHz
厂商名称	SAMSUNG(三星)	-	-	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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