BAS21PG
9 June 2015
SO
T3
53
Dual isolated high-voltage switching diode
Product data sheet
1. General description
Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: t
rr
≤ 50 ns
Low leakage current
Reverse voltage V
R
≤ 250 V
Low capacitance: C
d
≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed switching at high voltage
High-voltage general-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
Per diode
I
R
t
rr
reverse current
reverse recovery time
V
R
= 200 V; T
j
= 25 °C
I
F
= 10 mA; I
R
= 10 mA; I
R(meas)
= 1 mA;
R
L
= 100 Ω; T
j
= 25 °C
-
-
25
-
100
50
nA
ns
forward current
reverse voltage
T
j
= 25 °C; single diode loaded
T
j
= 25 °C
-
-
-
-
225
250
mA
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
5. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning information
Symbol Description
A1
n.c.
A2
K2
K1
anode diode 1
not connected
anode diode 2
cathode diode 2
cathode diode 1
1
2
3
1
2
3
aaa-018440
Simplified outline
5
4
Graphic symbol
5
4
TSSOP5 (SOT353)
6. Ordering information
Table 3.
Ordering information
Package
Name
BAS21PG
TSSOP5
Description
plastic surface-mounted package; 5 leads
Version
SOT353
Type number
7. Marking
Table 4.
BAS21PG
Marking codes
Marking code
PG
Type number
BAS21PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
2 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
reverse voltage
forward current
T
j
= 25 °C
T
j
= 25 °C; single diode loaded
T
j
= 25 °C; double diode loaded
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
t
p
≤ 1 ms; δ = 25 %; T
j
= 25 °C
t
p
= 1 µs; T
j(init)
= 25 °C; square wave
t
p
= 100 µs; T
j(init)
= 25 °C; square wave
t
p
= 10 ms; T
j(init)
= 25 °C; square wave
Per device; one diode loaded
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
Max
250
225
125
625
9
3
1.7
Unit
V
mA
mA
mA
A
A
A
T
amb
≤ 25 °C
[1]
[2]
-
-
-
-55
-65
255
290
150
150
150
mW
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
BAS21PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
3 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
10
3
Z
th(j-a)
(K/W)
10
2
Conditions
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
495
430
95
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Soldering point of cathode tab.
aaa-018393
duty cycle =
1
0.5
0.25
0.1
0.05
0.75
0.33
0.2
10
0.02
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
10
3
t
p
(s)
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS21PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
4 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.5
0.25
0.1
0.05
10
0.02
0.01
0.75
0.33
0.2
aaa-018394
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
10
3
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
Per diode
V
(BR)R
V
F
reverse breakdown
voltage
forward voltage
I
R
= 100 µA; T
j
= 25 °C
I
F
= 100 mA; T
j
= 25 °C
I
F
= 200 mA; T
j
= 25 °C
I
R
reverse current
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 150 °C
C
d
t
rr
diode capacitance
reverse recovery time
V
R
= 0 V; f = 1 MHz; T
j
= 25 °C
I
F
= 10 mA; I
R
= 10 mA; I
R(meas)
= 1 mA;
R
L
= 100 Ω; T
j
= 25 °C
250
-
-
-
-
-
-
-
-
-
25
40
0.8
-
-
1
1.25
100
-
2
50
V
V
V
nA
µA
pF
ns
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BAS21PG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
5 / 13
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