TS862C15R
Major characteristics
V
RRM
V
F
I
O
150
0.90
10
V
V
A
(10A)
(150V / 10A )
[0401]
High Voltage Schottky barrier diode
Outline drawings, mm
Characteristics
TS862C15R
Units Condition
Tc=25°C, MAX.
1.2
±0.2
10
+0.5
0.9
±0.3
4.5
±0.2
1.32
1.5 Max
9.3
±0.5
0.8
—0.1
5.08
2.7
+0.2
0.4
+0.2
1. Gate
2, 4. Drain
3. Source
Features
Low V
F
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Package : T-pack
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
Symbol
V
RSM
V
RRM
I
o
I
FSM
T
j
T
stg
Square wave, duty=
1/2
Tc=133°C
Sine wave
10ms 1shot
Conditions
tw=500ns, duty=1/40
1
2
3
Rating
150
150
10 *
75
+150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
FM
=10A
V
R
=V
RRM
Junction to case
Max.
0.90
150
1.5
Unit
V
µA
°C/W
Mechanical characteristics
Approximate mass
2
g
3.0
±0.3
(150V / 10A )
Characteristics
Forward Characteristic (typ.)
100
10
1
TS862C15R (10A)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
(A)
10
I F Forward Current
Reverse Current
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
(mA)
10
0
Tj=100°C
10
-1
10
-2
Tj= 25°C
IR
0.1
0.0
10
-3
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-4
0 10 20 30 40 50 60 70 80 90 100110120130140150160
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
Forward Power Dissipation (max.)
8
Io
Reverse Power Dissipation (max.)
DC
360°
(W)
λ
(W)
6
V
R
Forward Power Dissipation
Reverse Power Dissipation
6
360°
α
Square wave
λ
=60°
Square wave
λ
=120°
Sine wave
λ
=180°
4
Square wave
λ
=180°
DC
4
α
=180°
2
2
WF
Per 1element
0
0
2
4
6
0
0
20
40
60
80
100
120
140
160
Io
Average Forward Current
(A)
PR
VR
Reverse Voltage
(V)
Current Derating (Io-Tc) (max.)
160
1000
Junction Capacitance Characteristic (max.)
150
(°C)
140
Case Temperature
DC
Sine wave
λ
=180°
Square wave
λ
=180°
Square wave
λ
=120°
Square wave
λ
=60°
130
Junction Capacitance (pF)
Cj
120
100
110
360°
λ
Io
VR=75V
Tc
100
90
80
0
5
10
15
10
1
10
100
1000
λ
:Conduction angle of forward current for each rectifier element
Io
Average Output Current
(A)
VR
Reverse Voltage (V)
Io:Output current of center-tap full wave connection
(150V / 10A )
TS862C15R (10A)
Surge Capability (max.)
1000
1000
Surge Current Ratings (max.)
(A)
IFSM PeakHAlf-WaveCurrent (A)
Peak Half - Wave Current
100
100
I FSM
10
1
10
100
10
1
10
100
1000
Number of Cycles at 50Hz
tTime (ms) Sinewave
Transient Thermal Impedance (max.)
10
1
(°C/W)
Rth(j-c):1.5°C/W
10
0
Transient Thermal Impedance
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
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