TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
DEVICES
LEVELS
2N5664
2N5665
2N5666
2N5666S
2N5666U3
2N5667
2N5667S
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N5664
2N5665
Total
1/
Power Dissipation
@ T
A
= +25°C
@ T
C
= +100°C
P
T
T
J
, T
stg
2.5
30
2N5664
2N5666, S
200
250
6.0
1.0
5.0
2N5666, S
2N5667, S
1.2
15
-65 to +200
2N5666U3
1.5
35
W
°C
2N5665
2N5667, S
300
400
Unit
Vdc
Vdc
Vdc
Adc
Adc
TO-66 (TO-213AA)
2N5664, 2N5665
Operating & Storage Junction
Temperature Range
TO-5
2N5666, 2N5667
Note:
1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS
(T
C
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N5664, 2N5666
2N5665, 2N5667
Emitter-Base Breakdown Voltage
I
E
= 10μAdc
Collector-Emitter Cutoff Current
V
CE
= 200Vdc
2N5664, 2N5666
V
CE
= 300Vdc
2N5665, 2N5667
Collector-Base Cutoff Current
V
CB
= 200Vdc
V
CB
= 250Vdc
V
CB
= 300Vdc
V
CB
= 400Vdc
2N5664, 2N5666
2N5665, 2N5667
I
CBO
V
(BR)CER
250
400
6.0
0.2
0.2
0.1
1.0
0.1
1.0
Vdc
Symbol
Min.
Max.
Unit
TO-39 (TO-205AD)
2N5666S, 2N5667S
V
(BR)EBO
Vdc
I
CES
μAdc
μAdc
mAdc
μAdc
mAdc
U-3
2N5666U3
T4-LDS-0062 Rev. 1 (081095)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 2.0Vdc
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
All Types
40
25
40
25
15
10
5.0
120
75
Symbol
Min.
Max.
Unit
I
C
= 1.0Adc, V
CE
= 5.0Vdc
h
FE
I
C
= 3.0Adc, V
CE
= 5.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc
I
C
= 3.0Adc, I
B
= 0.6Adc
I
C
= 5.0Adc, I
B
= 1.0Adc
Base-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc
I
C
= 3.0Adc, I
B
= 0.6Adc
I
C
= 5.0Adc, I
B
= 1.0Adc
2N5664, 2N5666
2N5665, 2N5667
All Types
V
CE(sat)
0.4
0.4
1.0
Vdc
2N5664, 2N5666
2N5665, 2N5667
All Types
V
BE(sat)
1.2
1.2
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5.0Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
C
obo
120
pF
|h
fe
|
2.0
7.0
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= 30mAdc
Turn-Off Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= -I
B2
= 50mAdc
2N5664, 2N5666
2N5665, 2N5667
t
off
1.5
2.0
μs
Symbol
t
on
Min.
Max.
0.25
Unit
μs
T4-LDS-0062 Rev. 1 (081095)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
SAFE OPERATING AREA
DC Tests
T
C
= 100°C, 1 Cycle, t
≥
1.0s, t
r
+ t
f
= 10μs
Test 1
V
CE
= 6.0Vdc, I
C
= 5.0Adc
V
CE
= 3.0Vdc, I
C
= 5.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 0.75Adc
V
CE
= 40Vdc, I
C
= 0.75Adc
V
CE
= 29Vdc, I
C
= 0.4Adc
V
CE
= 37.5Vdc, I
C
= 0.4Adc
Test 3
V
CE
= 200Vdc, I
C
= 29mAdc
V
CE
= 200Vdc, I
C
= 19mAdc
V
CE
= 300Vdc, I
C
= 21mAdc
V
CE
= 300Vdc, I
C
= 14mAdc
2N5664
2N5666
2N5665
2N5667
2N5664
2N5665
2N5666
2N5667
2N5664 , 2N5665
2N5666, 2N5667
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0062 Rev. 1 (081095)
Page 3 of 3
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