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RN1130MFV(TL3SAN)

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
产品类别分立半导体    晶体管   
文件大小166KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1130MFV(TL3SAN)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

RN1130MFV(TL3SAN)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
其他特性BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)100
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz

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RN1130MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1130MFV
0.8±0.05
0.32±0.05
0.13±0.05
1.BASE
2.EMITTER
3.COLLECTOR
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.2±0.05
0.8±0.05
Unit: mm
0.22±0.05
0.4
1
2
3
1.2±0.05
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2130MFV
Equivalent Circuit
VESM
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Note:
Land Pattern Example
0.5
0.45
(unit: mm)
1.15
0.4
0.45
0.4
0.4
Start of commercial production
0.5±0.05
0.4
2005-04
1
2014-03-01

RN1130MFV(TL3SAN)相似产品对比

RN1130MFV(TL3SAN) RN1130MFV(TL3,T) RN1130MFV,L3F RN1130MFV(TL3PAV) RN1130MFV(TL3KYOCE
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon transistor npn vesm TRANS PREBIAS NPN 0.15W VESM Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
厂商名称 Toshiba(东芝) - - Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-F3 - - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code unknown - - unknown unknown
其他特性 BUILT IN BIAS RESISTANCE RATIO IS 1 - - BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC) 0.1 A - - 0.1 A 0.1 A
集电极-发射极最大电压 50 V - - 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 100 - - 100 100
JESD-30 代码 R-PDSO-F3 - - R-PDSO-F3 R-PDSO-F3
元件数量 1 - - 1 1
端子数量 3 - - 3 3
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN - - NPN NPN
表面贴装 YES - - YES YES
端子形式 FLAT - - FLAT FLAT
端子位置 DUAL - - DUAL DUAL
晶体管应用 SWITCHING - - SWITCHING SWITCHING
晶体管元件材料 SILICON - - SILICON SILICON
标称过渡频率 (fT) 250 MHz - - 250 MHz 250 MHz

 
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