Datasheet> 器件分类 > 分立半导体> 晶体管> RN2967FE(TPL3,F)

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RN2967FE(TPL3,F): 产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR; 产品类别分立半导体晶体管; 文件大小354KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2967FE(TPL3,F)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN2967FE(TPL3,F)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	80
元件数量	2
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN2967FE~RN2969FE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2967FE,RN2968FE,RN2969FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1967FE~RN1969FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2967FE

RN2968FE

R1 (kΩ)

R2 (kΩ)

RN2969FE

JEDEC

JEITA

TOSHIBA

―

2-2N1A

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2967FE

Emitter-base voltage

RN2968FE

RN2969FE

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

100

150

−55~150

°C

Unit

Weight: 3 mg (typ.)

Equivalent Circuit

(top view)

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2011-01-19

RN2967FE(TPL3,F)相似产品对比

	RN2967FE(TPL3,F)	RN2968FE(TE85L)	RN2968FE(TPL3)	RN2967FE(TE85L)	RN2967FE(TPL3)
描述	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
是否Rohs认证	符合	不符合	不符合	不符合	不符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	80	80	80	80	80
元件数量	2	2	2	2	2
极性/信道类型	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
表面贴装	YES	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Toshiba(东芝)	-	-	Toshiba(东芝)	Toshiba(东芝)

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