The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 August 2013.
INCH-POUND
MIL-PRF-19500/357M
6 May 2013
SUPERSEDING
MIL-PRF-19500/357L
17 July 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,
TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634UBN THROUGH 2N3637UBN,
2N3634L THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF,
JANKCAG, JANKCAH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL,
JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power amplifier, and
switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified
in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level
designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have
passed RHA requirements.
* 1.2 Physical dimensions. See
figure 1
(TO-5 and TO-39),
figure 2
(UB and UBN), and figures 3 and 4 (JANHC
and JANKC).
*
1.3 Maximum ratings. Unless otherwise specified T
A
= +25°C.
P
T
(1)
T
A
=
+25°C
W
1
0.5
1
0.5
1
0.5
1
0.5
P
T
(2)
T
C
=
+25°C
W
5
N/A
5
N/A
5
N/A
5
N/A
P
T
(3)
T
SP
=
+25°C
W
N/A
1.5
N/A
1.5
N/A
1.5
N/A
1.5
R
θJA
(4)
°C/W
175
325
175
325
175
325
175
325
R
θJC
(4)
°C/W
35
N/A
35
N/A
35
N/A
35
N/A
R
θJSP
(4)
°C/W
N/A
90
N/A
90
N/A
90
N/A
90
I
C
T
J
and
T
STG
°C
-65 to
+200
V
CBO
V
CEO
V
EBO
Types
A dc
1
1
1
1
1
1
1
1
V dc
140
140
140
140
175
175
175
175
V dc
140
140
140
140
175
175
175
175
V dc
5
5
5
5
5
5
5
5
2N3634, 2N3634L
2N3634UB and UBN
2N3635, 2N3635L
2N3635UB and UBN
2N3636, 2N3636L
2N3636UB and UBN
2N3637, 2N3637L
2N3637UB and UBN
*
*
*
*
(1)
(2)
(3)
(4)
See
figure 5
and 6.
See
figure 7.
See
figure 8.
See figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil
. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/357M
1.4 Primary electrical characteristics. Unless otherwise specified, T
A
= +25°C.
h
FE
at V
CE
= 10 V dc
Types
h
FE1
I
C
= 0.1
mA dc
(1)
Min
25
25
55
55
25
25
55
55
h
FE2
I
C
= 1.0
mA dc
(1)
Min
45
45
90
90
45
45
90
90
V
CE(sat)2
I
C
= 50 mA dc
(1)
I
B
= 5 mA dc
V dc
h
FE3
I
C
= 10
mA dc
(1)
Min
50
50
100
100
50
50
100
100
h
FE4
I
C
= 50
mA dc (1)
h
FE5
I
C
= 150
mA dc (1)
|h
fe
|
V
CE
= 30 V dc
I
C
= 30 mA dc
f = 100 Mhz
C
obo
V
CB
= 20 V dc
I
E
= 0
100 Khz
≤
f
≤
1 Mhz
Max
10
10
10
10
10
10
10
10
2N3634, 2N3634L
2N3634UB and UBN
2N3635, 2N3635L
2N3635UB and UBN
2N3636, 2N3636L
2N3636UB and UBN
2N3637, 2N3637L
2N3637UB and UBN
Min
50
50
100
100
50
50
100
100
V
BE(sat)1
I
C
= 10 mA dc
(1)
I
B
= 1 mA dc
V dc
Max
150
150
300
300
150
150
300
300
Min
30
30
60
60
30
30
60
60
V
BE(sat)2
Max
Min
1.5
1.5
2.0
2.0
1.5
1.5
2.0
2.0
Max
8.0
8.0
8.5
8.5
8.0
8.0
8.5
8.5
V
CE(sat)1
I
C
= 10 mA dc
(1)
I
B
= 1 mA dc
V dc
Minimum
Maximum
Switching parameters
t
d
t
r
t
s
t
f
I
C
= 50 mA dc (1)
I
B
= 5 mA dc
V dc
0.65
0.90
ns
ns
ns
ns
0.3
0.6
0.8
100
100
500
150
(1) Pulsed (see
4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://quicksearch.dla.mil
or
https://assist.dla.mil
or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/357M
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TYP
5.08 TYP
.016
.021
0.41
0.53
See notes 7, 9, and 10
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.010
0.254
.029
.045
0.74
1.14
.028
.034
0.71
0.86
45° TP
45° TP
Emitter
Base
Collector
Ltr
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
r
TL
TW
α
Term 1
Term 2
Term 3
Notes
7
6
7
7
7
5
8
4
3
6
TO-5
TO-39
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4. TL measured from maximum HD.
5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC.
The device may be measured by direct methods or by gauge and gauging procedure.
7. LU applies between L
1
and L
2
. LD applies between L
2
and L minimum. Diameter is uncontrolled in L
1
and
beyond LL minimum.
8. r (radius) applies to both inside corners of tab.
9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum (TO-5).
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions (TO-5 and TO-39).
3
MIL-PRF-19500/357M
* FIGURE 2. Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB and UBN version).
4
MIL-PRF-19500/357M
Symbol
Inches
Min
.046
.115
.085
Dimensions
Millimeters
Min
1.17
2.92
2.16
Max
1.42
3.25
2.74
3.25
2.74
0.97
0.89
Note
Symbol
Inches
Min
.036
.071
.016
Dimensions
Millimeters
Min
0.91
1.80
0.41
Max
1.02
2.01
0.61
.203
.305
.559
Note
BH
BL
BW
CL
CW
LL1
LL2
.022
.017
Max
.056
.128
.108
.128
.108
.038
.035
0.56
0.43
LS
1
LS
2
LW
r
r1
r2
Max
.040
.079
.024
.008
.012
.022
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
6. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
7. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB and UBN version).
5
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