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HIP2101IB

产品描述Half Bridge Based MOSFET Driver
产品类别模拟混合信号IC    驱动程序和接口   
文件大小675KB,共13页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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HIP2101IB概述

Half Bridge Based MOSFET Driver

HIP2101IB规格参数

参数名称属性值
厂商名称Renesas(瑞萨电子)
包装说明SOP,
Reach Compliance Codeunknown
ECCN代码EAR99
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
长度4.9 mm
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
座面最大高度1.75 mm
最大供电电压14 V
最小供电电压9 V
标称供电电压12 V
表面贴装YES
温度等级AUTOMOTIVE
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
断开时间0.056 µs
接通时间0.056 µs
宽度3.9 mm

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DATASHEET
HIP2101
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the low-
power benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.
FN9025
Rev 9.00
November 12, 2015
Features
• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available
(RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1 Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
Ordering Information
PART NUMBER
HIP2101IB
(No
longer available,
recommended
replacement:
HIP2101IBZ)
HIP2101IBZ (Note 1)
HIP2101EIB
(No
longer available,
recommended
replacement:
HIP2101EIBZ)
HIP2101EIBZ
(Note 1)
HIP2101IRZ (Note 1)
HIP2101IR4Z
(Note 1)
NOTES:
1.
Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020C.
2. Add “T” suffix for Tape and Reel packing option.
TEMP.
RANGE (°C)
-40 to 125
PACKAGE
8 Ld SOIC
PKG.
DWG. #
M8.15
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
-40 to 125
-40 to 125
8 Ld SOIC (Pb-free) M8.15
8 Ld EPSOIC
M8.15C
• Supply Undervoltage Protection
• 3 Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
-40 to 125
-40 to 125
-40 to 125
8 Ld EPSOIC
(Pb-free)
16 Ld 5x5 QFN
(Pb-free)
12 Ld 4x4 DFN
(Pb-free)
M8.15C
L16.5x5
L12.4x4A
Applications
• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters
FN9025 Rev 9.00
November 12, 2015
Page 1 of 13

HIP2101IB相似产品对比

HIP2101IB HIP2101IBT HIP2101IR
描述 Half Bridge Based MOSFET Driver 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8 2A HALF BRDG BASED MOSFET DRIVER, QCC16, 5 X 5 MM, PLASTIC, MO-220VHHB, QFN-16
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
包装说明 SOP, PLASTIC, MS-012AA, SOIC-8 HVQCCN, LCC16,.2SQ,32
Reach Compliance Code unknown not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
高边驱动器 YES YES YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 S-XQCC-N16
长度 4.9 mm 4.9 mm 5 mm
功能数量 1 1 1
端子数量 8 8 16
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED
封装代码 SOP SOP HVQCCN
封装形状 RECTANGULAR RECTANGULAR SQUARE
封装形式 SMALL OUTLINE SMALL OUTLINE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度 1.75 mm 1.75 mm 1 mm
最大供电电压 14 V 14 V 14 V
最小供电电压 9 V 9 V 9 V
标称供电电压 12 V 12 V 12 V
表面贴装 YES YES YES
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING NO LEAD
端子节距 1.27 mm 1.27 mm 0.8 mm
端子位置 DUAL DUAL QUAD
断开时间 0.056 µs 0.056 µs 0.056 µs
接通时间 0.056 µs 0.056 µs 0.056 µs
宽度 3.9 mm 3.9 mm 5 mm
是否Rohs认证 - 不符合 不符合
零件包装代码 - SOIC QFN
针数 - 8 16
JESD-609代码 - e0 e0
湿度敏感等级 - 1 1
标称输出峰值电流 - 2 A 2 A
封装等效代码 - SOP8,.25 LCC16,.2SQ,32
峰值回流温度(摄氏度) - 240 240
电源 - 12 V 12 V
认证状态 - Not Qualified Not Qualified
技术 - CMOS CMOS
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间 - 30 30
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