D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDIP20
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Harris |
包装说明 | DIP, DIP20,.3 |
Reach Compliance Code | unknown |
其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY |
系列 | HC/UH |
JESD-30 代码 | R-CDIP-T20 |
JESD-609代码 | e0 |
负载电容(CL) | 50 pF |
逻辑集成电路类型 | D FLIP-FLOP |
最大I(ol) | 0.006 A |
位数 | 8 |
功能数量 | 1 |
端子数量 | 20 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
输出极性 | TRUE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP |
封装等效代码 | DIP20,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
电源 | 5 V |
传播延迟(tpd) | 27 ns |
认证状态 | Not Qualified |
筛选级别 | 38535V;38534K;883S |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
总剂量 | 200k Rad(Si) V |
触发器类型 | POSITIVE EDGE |
HCS273DMSR | HCS273HMSR | 5962R9579101VRC | 5962R9579101VXC | 5962R9579101V9A | HCS273D/SAMPLE | HCS273KMSR | HCS273K/SAMPLE | |
---|---|---|---|---|---|---|---|---|
描述 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDIP20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDIP20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDFP20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, DIE-20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDIP20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDFP20 | D Flip-Flop, HC/UH Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, CMOS, CDFP20 |
Reach Compliance Code | unknown | unknown | unknow | unknown | unknown | unknown | unknown | unknown |
系列 | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH |
JESD-30 代码 | R-CDIP-T20 | X-XUUC-N20 | R-CDIP-T20 | R-CDFP-F20 | X-XUUC-N20 | R-CDIP-T20 | R-CDFP-F20 | R-CDFP-F20 |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
逻辑集成电路类型 | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP |
位数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | UNCASED CHIP | IN-LINE | FLATPACK | UNCASED CHIP | IN-LINE | FLATPACK | FLATPACK |
传播延迟(tpd) | 27 ns | 27 ns | 27 ns | 27 ns | 27 ns | 27 ns | 27 ns | 27 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | NO | YES | YES | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | FLAT | NO LEAD | THROUGH-HOLE | FLAT | FLAT |
端子位置 | DUAL | UPPER | DUAL | DUAL | UPPER | DUAL | DUAL | DUAL |
触发器类型 | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE |
厂商名称 | Harris | Harris | - | - | Harris | Harris | Harris | Harris |
JESD-609代码 | e0 | - | e4 | e4 | e0 | - | e0 | - |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | - | 125 °C | - |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | -55 °C | - |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | - | MILITARY | - |
端子面层 | Tin/Lead (Sn/Pb) | - | GOLD | GOLD | TIN LEAD | - | Tin/Lead (Sn/Pb) | - |
总剂量 | 200k Rad(Si) V | - | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | - | 200k Rad(Si) V | - |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | - | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved