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KM68FR2000T-3000

产品描述Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
产品类别存储    存储   
文件大小143KB,共9页
制造商SAMSUNG(三星)
官网地址http://www.samsung.com/Products/Semiconductor/
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KM68FR2000T-3000概述

Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

KM68FR2000T-3000规格参数

参数名称属性值
厂商名称SAMSUNG(三星)
零件包装代码TSOP1
包装说明TSSOP,
针数32
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间300 ns
JESD-30 代码R-PDSO-G32
长度18.4 mm
内存密度2097152 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量32
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX8
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)1.8 V
标称供电电压 (Vsup)2 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
宽度8 mm

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KM68FV2000, KM68FS2000, KM68FR2000 Family
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial draft
Revise
- Remove sTSOP1 from product
- Rename high power product to low power.
I
SB1
=10.0mA(Max)
- Add super low power version with special handling
I
SB1
=1.0mA(Max)
- Remove 70ns and add 85ns part on KM68FS2000 Family
Finalize
Revise
- Change datasheet format
- Remove reverse type package from product
- Remove reseved speed bin(100ns)
Draft Date
October 2, 1996
December 1, 1996
Remark
Advance
Preliminary
1.0
2.0
April 11, 1997
March 5, 1998
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 1998

KM68FR2000T-3000相似产品对比

KM68FR2000T-3000 KM68FV2000T-8000 KM68FS2000TI-120 KM68FS2000T-1200 KM68FR2000TI-300 KM68FV2000TI-800 KM68FV2000T-7000 KM68FV2000TI-700 KM68FS2000T-1500 KM68FS2000TI-150
描述 Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 256KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
零件包装代码 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1
包装说明 TSSOP, TSSOP, TSSOP, TSSOP, TSSOP, TSSOP, TSSOP, TSSOP, TSSOP, TSSOP,
针数 32 32 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 300 ns 85 ns 120 ns 120 ns 300 ns 85 ns 70 ns 70 ns 150 ns 150 ns
JESD-30 代码 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
长度 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm
内存密度 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32 32 32 32
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C 70 °C 85 °C 70 °C 85 °C
组织 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP TSSOP TSSOP TSSOP TSSOP TSSOP TSSOP TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 2.7 V 3.6 V 3.3 V 3.3 V 2.7 V 3.6 V 3.6 V 3.6 V 3.3 V 3.3 V
最小供电电压 (Vsup) 1.8 V 3 V 2.3 V 2.3 V 1.8 V 3 V 3 V 3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2 V 3.3 V 2.5 V 2.5 V 2 V 3.3 V 3.3 V 3.3 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
厂商名称 SAMSUNG(三星) - SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)

 
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