INTEGRATED CIRCUITS
DATA SHEET
UBA1710M
Modulator for GaAs power
amplifiers
Product specification
Supersedes data of 1997 Feb 18
File under Integrated Circuits, IC17
1997 Oct 17
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
FEATURES
•
Power MOS modulators for control of GaAs power
amplifier drain voltage
•
Power control loop amplifier and MOS driver
•
Voltage tripler for supply of MOS driver
•
Positive-to-negative DC converter for GaAs power
amplifier gate biasing.
APPLICATIONS
•
Control of GaAs power amplifiers for GSM and DCS
hand-held transceivers.
QUICK REFERENCE DATA
SYMBOL
V
CC
V
DD
I
CC
+ I
DD
T
amb
Note
1. For conditions, see Chapter “Characteristics”.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
UBA1710M
SSOP20
DESCRIPTION
plastic shrink small outline package; 20 leads; body width 4.4 mm
PARAMETER
(1)
analog supply voltage
digital supply voltage
peak supply current in power-up mode
operating ambient temperature
MIN.
4.2
4.2
−
−20
TYP.
4.8
4.8
12
−
GENERAL DESCRIPTION
UBA1710M
The UBA1710M integrates the functions required to
operate the GaAs Power Amplifiers (PAs) from the
CGY20xx family which are intended for GSM and DCS
applications.
It includes a negative supply for PA gate biasing and most
of the functions required to implement power control so
that only a very few external component are required.
The power control section integrates two power MOS
devices for control of the PA drain voltages, an MOS driver
and a feedback loop amplifier. The MOS driver is supplied
from an on-chip voltage tripler.
MAX.
7.5
7.5
−
+85
V
V
UNIT
mA
°C
VERSION
SOT266-1
1997 Oct 17
2
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
BLOCK DIAGRAM
UBA1710M
handbook, full pagewidth
TC1N TC1P TC2N TC2P
6
8
9
10
VP
11
STB
20
NC3N
2
NC3P
1
VN
3
Rext
VOLTAGE TRIPLER
16
15
14
13
POWER MOS 1
CLOCK
NEGATIVE DC-DC 19
CONVERTER
D1B
D1A
S1B
S1A
D2
S2
UBA1710M
BUFFER
18
17
POWER MOS 2
4
VCC
7
VDD
POWER
MANAGEMENT
5
GND
12
MGG536
BUFI
Fig.1 Block diagram.
PINNING
SYMBOL
NC3
P
NC3
N
V
N
V
CC
GND
TC1
N
V
DD
TC1
P
TC2
N
TC2
P
V
P
BUFI
S1A
S1B
D1A
D1B
S2
D2
R
ext
STB
1997 Oct 17
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DESCRIPTION
charge pump tank capacitor
charge pump tank capacitor
negative bias voltage
analog supply voltage
ground
charge pump tank capacitor
digital supply voltage
charge pump tank capacitor
charge pump tank capacitor
charge pump tank capacitor
positive tripler voltage
buffer input
power MOS 1 source A
power MOS 1 source B
power MOS 1 drain A
power MOS 1 drain B
power MOS 2 source
power MOS 2 drain
external resistance for V
N
standby input (active HIGH)
3
Fig.2 Pin configuration.
handbook, halfpage
NC3P
NC3N
VN
VCC
GND
TC1N
VDD
TC1P
TC2N
1
2
3
4
5
20 STB
19 Rext
18 D2
17 S2
16 D1B
UBA1710M
6
7
8
9
15
14
13
12
D1A
S1B
S1A
BUFI
TC2P 10
MGG535
11 VP
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
FUNCTIONAL DESCRIPTION
Power control section
Power control for GaAs PAs from the CGY20xx family is
achieved by varying the drain voltage. This is achieved
with the UBA1710M by means of the two power MOS
devices integrated on-chip. They enable separate control
of the PA output stage from the pre-amplifier stages.
They have a very low ‘on’ resistance for low drop voltage
at high RF output power.
The MOS devices are driven by a buffer. The buffer
amplifier, in association with power MOS, is included in a
feedback loop to exhibit a high cut-off frequency (3 MHz)
over the whole control dynamic range. This buffer allows
fast switching of the MOS in accordance with GSM power
ramping requirements.
DC-DC converters
One DC-DC converter is required to provide negative gate
biasing to the GaAs PA.
UBA1710M
The standard value is typically
−2
V, without any external
resistor connected. The other one is a voltage tripler and
is required to supply the MOS driver. The driver is required
to raise the MOS gate voltage well above the battery
voltage in order to open the MOS switches
(‘high side’ driver).
These DC-DC converters are operated at a typical
frequency of 600 kHz supplied by an internal oscillator.
Five external capacitors with a typical value of 0.1
µF
(0603 SMD) are required to operate these converters.
Power management
The power management disables the PA drain voltage and
prevents the PA from burnout if drain voltage is supplied
before the negative gate voltage is available.
Standby mode
An additional feature includes a standby mode, reducing
the current consumption to a maximum value of 1
µA.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL
V
CC
V
DD
V
I
analog supply voltage
digital supply voltage
DC input voltage
all pins (except BUFI)
pin BUFI
I
I
P
tot
T
stg
T
amb
DC current into any signal pin
total power dissipation
storage temperature
operating ambient temperature
−0.5
−0.5
−10
−
−65
−20
+9.0
+5.0
+10
0.65
+150
+85
V
V
mA
W
°C
°C
PARAMETER
MIN.
−0.5
−0.5
MAX.
+9.0
+9.0
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
VALUE
100
UNIT
K/W
1997 Oct 17
4
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
CHARACTERISTICS
V
CC
= V
DD
= 4.8 V; T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Supplies
I
CC
+ I
DD
I
stb
R
DSon1
R
DSon2
f
clk
V
Po
V
R(p-p)
t
on
V
No
V
R(p-p)
t
on
V
IL
V
IH
t
sw
peak supply current
standby current
power-up mode; PA on
power-down mode; PA off
standby mode
Power MOS 1
on resistance
I
DS
= 1.3 A
I
DS
= 0.4 A
−
−
−
−
−
−
12
5
0.1
PARAMETER
CONDITIONS
MIN.
UBA1710M
TYP.
MAX.
−
−
1
−
−
−
UNIT
mA
mA
µA
Ω
Ω
0.18
Power MOS 2
on resistance
0.5
Clock circuit
clock frequency
600
kHz
Voltage tripler
output voltage
amplitude ripple
(peak-to-peak value)
turn-on time
with I
No
= 250
µA;
R
ext
= 470 kΩ
with I
No
= 250
µA;
C3 = 100 nF;
C
N
= 100 nF
with I
Po
= 2 mA
with I
Po
= 2 mA;
C1 = C2 = 100 nF; C
P
= 100 nF
11.3
−
−
−1.5
−
−
−
−
2
Ω
load at MOS outputs
−
11.8
20
100
−1.8
2
280
12.3
−
−
−2.0
−
−
−
−
−
V
mV
µs
Negative DC/DC converter
output voltage
amplitude ripple
(peak-to-peak value)
turn-on time
V
mV
µs
MOS buffer amplifier
LOW level input voltage
HIGH level input voltage
switching time from 0 to 4.5 V
1.2
3.4
1
V
V
µs
1997 Oct 17
5
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