SMN03T80F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
BV
DSS
=800V (Min.)
Low gate charge: Q
g
=19nC (Typ.)
Low drain-source On resistance: R
DS(on)
=4.2Ω (Max.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
SMN03T80F
Marking
SMN03T80
Package
TO-220F-3L
GDS
TO-220F-3L
Marking Information
SMN
03T80
YWW
AUK
AUK
GFYMDD
Δ
YMDD
SMN03T80
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GFYMDD
-. G : Option Code (H : Halogen Free)
-. F : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
T
c
=25C
T
c
=100C
I
DM
E
AS
I
AR
E
AR
P
D
T
J
T
stg
Rating
800
30
3
1.83
12
200
3
2.8
28
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Drain current (Pulsed)
*
Single pulsed avalanche energy
(Note 2)
Repetitive avalanche current
(Note 1)
Repetitive avalanche energy
(Note 1)
Power dissipation
Junction temperature
Storage temperature range
* Limited only maximum junction temperature
Rev. date: 21-SEP-12
KSD-T0O118-000
www.auk.co.kr
1 of 8
SMN03T80F
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 4.46
Max. 62.5
Unit
C/W
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
(Note 3)
Forward transfer conductance
(Note 3)
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3,4)
Rise time
(Note 3,4)
Turn-off delay time
(Note 3,4)
Fall time
(Note 3,4)
Total gate charge
(Note 3,4)
Gate-source charge
(Note 3,4)
Gate-drain charge
(Note 3,4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
R
G
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=640V, V
GS
=10V
I
D
=3A
V
DD
=400V, I
D
=3A
R
G
=25Ω
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=800V, V
GS
=0V
V
DS
=640V, T
c
=125
C
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=1.5A
V
DS
=30V, I
D
=1.5A
f=1MHz, V
DS
=0V
Min.
800
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
3.36
3.7
3
696
65
10.2
48
36
106
41
19
4
7.6
Max.
-
4
10
100
100
4.2
-
10
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
V
V
uA
uA
nA
S
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
Reverse recovery charge
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=3A
I
S
=3A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
372
1.8
Max.
3
12
1.5
-
-
Unit
A
A
V
ns
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=42mH, I
AS
=3A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 21-SEP-12
KSD-T0O118-000
www.auk.co.kr
2 of 8
SMN03T80F
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
– V
GS
Fig. 3 R
DS(ON)
- I
D
Fig. 4 I
DR
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
Rev. date: 21-SEP-12
KSD-T0O118-000
www.auk.co.kr
3 of 8
SMN03T80F
Electrical Characteristic Curves
(Continue)
Fig. 7 BV
DSS
- T
J
Fig. 8 R
DS(ON)
- T
J
Fig. 9 I
D
- T
C
Fig. 10 V
GS(th)
– T
J
Fig. 11 Safe Operating Area
Rev. date: 21-SEP-12
KSD-T0O118-000
www.auk.co.kr
4 of 8
SMN03T80F
Fig. 12 Gate Charge Test Circuit & Waveform
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 E
AS
Test Circuit & Waveform
Rev. date: 21-SEP-12
KSD-T0O118-000
www.auk.co.kr
5 of 8
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