TR300™ LEDs
Data Sheet
CxxxTR3041-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in
a very bright and highly efficient solution for the 0.6-mm and 0.8-mm sideview market. The design is optimally suited
for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent
with industry standard packaging.
FEATURES
•
Rectangular LED Rf Performance
− 450 & 460 nm
½
•
•
•
TR-30™ – 30 mW min.
Epoxy Die Attach
Low Forward Voltage - 3.2 V Typical at 20 mA
1000-V ESD Threshold Rating
APPLICATIONS
•
Small LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
− Mobile Appliances
− Digital Cameras
− Car Navigation Systems
•
Medium LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
− Portable PCs
− Monitors
•
•
LED Video Displays
General Illumination
• InGaN Junction on Thermally Conductive SiC
Substrate
CxxxTR3041-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
.-
CPR3DV Rev
Data Sheet:
Backside
Anode (+)
80 μm diameter
TR300 LED
300 x 410 μm
Cathode (-)
98 x 98 μm
Bottom Surface
155 x 265 μm
t = 140 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR3041-Sxx00
C460TR3041-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
2.7
2.7
Typ.
3.2
3.2
Max.
3.7
3.7
Note 3
CxxxTR3041-Sxx00
50 mA
100 mA
125°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxTR3041-Sxx00
Dimension
260 x 370
300 x 410
140
80
1.0
98 x 98
155 x 265
Tolerance
±35
±35
±15
-5, +15
±0.5
-5, +15
±35
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DV Rev. -
Standard Bins for CxxxTR3041-Sxx00
LED chips are sorted to the radiant
flux and dominant
wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR3041-Sxxxx) orders may be filled with any or all bins (CxxxTR3041-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
TR-30
C450TR3041-S3000
Radiant Flux
C450TR3041-0209
C450TR3041-0210
C450TR3041-0206
C450TR3041-0202
C450TR3041-0211
C450TR3041-0207
C450TR3041-0203
C450TR3041-0212
C450TR3041-0208
C450TR3041-0204
35.0 mW
C450TR3041-0205
33.0 mW
C450TR3041-0201
30.0 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
452.5 nm
455 nm
TR-30
C460TR3041-S3000
Radiant Flux
C460TR3041-0209
C460TR3041-0210
C460TR3041-0206
C460TR3041-0202
C460TR3041-0211
C460TR3041-0207
C460TR3041-0203
C460TR3041-0212
C460TR3041-0208
C460TR3041-0204
35.0 mW
C460TR3041-0205
33.0 mW
C460TR3041-0201
30.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DV Rev. -
0.50
0.00
0
10
20
If (mA)
30
40
50
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
50
40
30
Wavelength Shift vs. Forward Current
1.50
1.00
0.50
Shift (nm)
If (mA)
0.00
-0.50
20
10
0
-1.00
-1.50
0
10
20
30
Characterization
If (mA)
0
1
2
Vf (V)
3
4
5
-2.00
40
50
Relative Intensity vs. Forward Current
2.50
2.00
120
100
Relative Intensity vs Peak Wavelength
Relative Intensity vs Peak Wavelength
220
200
180
160
140
120
100
80
60
40
20
0
Relative Intensity (%)
% Intensity
1.50
1.00
0.50
0.00
0
10
20
If (mA)
30
40
50
80
60
40
20
0
320
420
520
620
Wavelength (nm)
% Relative Intensity
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
0
Copyright © 2007, Cree, Inc.
p
Forward Current vs. Forward Voltage
50
40
30
If (mA)
20
10
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
0
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
4
0
CPR3DV Rev. -
1
2
3
4
5
Vf (V)
Radiation Pattern
This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR, TR30 and TR300 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DV Rev. -
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