TR260™ LEDs
CxxxTR260-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in
a very bright and highly efficient solution for the 0.6-mm and 0.8-mm sideview market. The design is optimally suited
for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent
with industry standard packaging.
FEATURES
•
Rectangular LED RF Performance
–
–
–
•
•
•
450 & 460 nm – 33+ mW
470 nm – 30+ mW
527 nm – 12+ mW
APPLICATIONS
•
Small LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
− Mobile Appliances
− Digital Cameras
− Car Navigation Systems
•
Medium LCD Backlighting – 0.8 mm & 0.6 mm
sideview packages
− Portable PCs
− Monitors
•
•
LED Video Displays
General Lighting
Epoxy Die Attach
Low Forward Voltage - 3.1 V typ at 20 mA
1000-V ESD Threshold Rating
• InGaN Junction on Thermally Conductive SiC
Substrate
CxxxTR260-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
C
CPR3DK Rev
Data Sheet:
Anode (+)
90 μm Diameter
TR260 LED
260 x 480 μm
Junction
440 x 220 μm
Cathode (-)
98 x 98 μm
Bottom Surface
160 x 380 μm
t = 115 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
LED Chip Storage Temperature Range
Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR260-Sxx00
C460TR260-Sxx00
C470TR260-Sxx00
C527TR260-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
2.7
2.7
2.7
2.9
Typ.
3.1
3.1
3.1
3.2
Max.
3.4
3.4
3.4
3.6
Note 3
CxxxTR260-Sxx00
50 mA
100 mA
125°C
5 V
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
21
35
CxxxTR260-Sxx00
Dimension
220 x 440
260 x 480
115
90
1.0
98 x 98
160 x 380
Tolerance
±35
±35
±15
-5, +15
±0.5
-5, +15
±35
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics are measured in an integrating sphere using Illuminance E.
4. Specifications are subject to change without notice.
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DK Rev C
Standard Bins for CxxxTR260-Sxx00
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR260-Sxxxx) orders may be filled with any or all bins (CxxxTR260-xxxx) contained in
the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
450-nm Kit
Radiant Flux (mW)
C450TR260-S3300
C450TR260-0417
C450TR260-0418
C450TR260-0414
C450TR260-0410
C450TR260-0406
C450TR260-0419
C450TR260-0415
C450TR260-0411
C450TR260-0407
C450TR260-0420
C450TR260-0416
C450TR260-0412
C450TR260-0408
39
C450TR260-0413
37
C450TR260-0409
35
C450TR260-0405
33
445
447.5
450
Dominant Wavelength (nm)
452.5
455
460-nm Kit
Radiant Flux (mW)
C460TR260-S3300
C460TR260-0417
C460TR260-0418
C460TR260-0414
C460TR260-0410
C460TR260-0406
C460TR260-0419
C460TR260-0415
C460TR260-0411
C460TR260-0407
C460TR260-0420
C460TR260-0416
C460TR260-0412
C460TR260-0408
39
C460TR260-0413
37
C460TR260-0409
35
C460TR260-0405
33
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DK Rev C
Standard Bins for TR260 (continued)
470-nm Kit
Radiant Flux (mW)
C470TR260-S2700
C470TR260-0413
C470TR260-0414
C470TR260-0410
C470TR260-0406
C470TR260-0402
C470TR260-0415
C470TR260-0411
C470TR260-0407
C470TR260-0403
C470TR260-0416
C470TR260-0412
C470TR260-0408
C470TR260-0404
37
C470TR260-0409
35
C470TR260-0405
33
C470TR260-0401
30
465
467.5
470
Dominant Wavelength (nm)
472.5
475
527-nm Kit
Radiant Flux (mW)
C527TR260-S1200
C527TR260-0407
C527TR260-0408
C527TR260-0405
C527TR260-0402
C527TR260-0409
C527TR260-0406
C527TR260-0403
18
C527TR260-0404
15
C527TR260-0401
12
520
525
530
535
Dominant Wavelength (nm)
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DK Rev C
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs. Forward Voltage
100
14.00
10
12.00
Wavelength Shift vs. Forward Current
80
Shift (nm)
Dominant Wavelength Shift (nm)
10.00
5
8.00
6.00
0
4.00
2.00
-5
0.00
-2.00
-10
-4.00
-6.00
-15
0
0
10
20
20
40
30
60
40
80
50
100
460
527
If (mA)
60
40
20
0
0
1
2
3
4
5
6
Vf (V)
If (mA)
If (mA)
Relative Intensity vs. Forward Current
400%
Relative Intensity vs Peak Wavelength
Relative Intensity vs. Peak Wavelength
120
100
80
60
40
20
0
300%
200%
100%
0%
0
20
40
60
80
100
Relative Intensity (%)
Relative Intensity (%)
Relative Light Intensity
320
420
520
620
If (mA)
Wavelength
(nm)
Wavelength
(nm)
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DK Rev C
DSP 与 ARM 处理器
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