RazerThin
®
Gen III LEDs
CxxxRT320-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC
®
substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
320 Gen 3 Schematic
FEATURES
•
•
•
Thin 95 μm Chip
–
–
–
–
•
•
Reduced Forward Voltage
3.1 V Typical at 20 mA
460 nm - 14 mW min.
470 nm - 12 mW min.
527 nm - 6 mW min.
RazerThin LED Performance
APPLICATIONS
•
LCD Backlighting Units
–
–
–
•
•
•
•
•
Mobile Appliances
Digital Still Cameras
Monitors
PRELIMINARY
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliances
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT320-Sxxxx Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3DU Rev
Data Sheet:
G•SiC LED Chip
320 x 320 μm
290 x 290 μm
Anode (+)
t
= 95 μm
Gold Bond Pad
112 μm Diameter
Backside
Metallization
Cathode (-)
110 μm square
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Note 2
CxxxRT320-Sxxxx
50 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C460RT320-Sxxxx
C470RT320-Sxxxx
C527RT320-Sxxxx
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
2.7
2.7
2.7
Typ.
3.1
3.1
3.2
Max.
3.7
3.7
3.7
Reverse Current
[I(Vr=5V), μA]
Max.
1
1
1
Full Width Half Max.
(λ
D
, nm)
Typ.
24
25
40
CxxxRT320-Sxxxx
Dimension
270 x 270
320 x 320
290 x 290
95
112
1.0
110
Tolerance
± 35
± 35
± 35
± 15
± 20
± 0.5
± 10
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxRT320-Sxx000) orders may be filled with any or all bins (CxxxRT320-xxxx) contained
in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.
Radiant Flux
C460RT320-S700
C460RT320-0313
C460RT320-0314
C460RT320-0310
C460RT320-0315
C460RT320-0311
C460RT320-0316
C460RT320-0312
20.0 mW
C460RT320-0309
17.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C460RT320-S400
462.5 nm
465 nm
Radiant Flux
C460RT320-0313
C460RT320-0314
C460RT320-0310
C460RT320-0306
C460RT320-0315
C460RT320-0311
C460RT320-0307
C460RT320-0316
C460RT320-0312
C460RT320-0308
20.0 mW
C460RT320-0309
17.0 mW
C460RT320-0305
14.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000 (continued)
C470RT320-S700
C470RT320-0313
C470RT320-0314
C470RT320-0310
C470RT320-0315
C470RT320-0311
C470RT320-0316
C470RT320-0312
Radiant Flux
20.0 mW
C470RT320-0309
17.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C470RT320-S400
472.5 nm
475 nm
Radiant Flux
C470RT320-0313
C470RT320-0314
C470RT320-0310
C470RT320-0306
C470RT320-0315
C470RT320-0311
C470RT320-0307
C470RT320-0316
C470RT320-0312
C470RT320-0308
20.0 mW
C470RT320-0309
17.0 mW
C470RT320-0305
14.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C470RT320-S200
472.5 nm
475 nm
C470RT320-0313
C470RT320-0314
C470RT320-0310
C470RT320-0306
C470RT320-0302
C470RT320-0315
C470RT320-0311
C470RT320-0307
C470RT320-0303
C470RT320-0316
C470RT320-0312
C470RT320-0308
C470RT320-0304
Radiant Flux
20.0 mW
C470RT320-0309
17.0 mW
C470RT320-0305
14.0 mW
C470RT320-0301
12.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DU Rev. -
Standard Bins for CxxxRT320-Sxx000 (continued)
C527RT320-S07500
C527RT320-0307
C527RT320-0308
C527RT320-0305
C527RT320-0309
C527RT320-0306
Radiant Flux
10.0 mW
C527RT320-0304
7.5 mW
520 nm
525 nm
530 nm
Dominant Wavelength
C527RT320-S0500
535 nm
Radiant Flux
C527RT320-0307
C527RT320-0308
C527RT320-0305
C527RT320-0302
C527RT320-0309
C527RT320-0306
C527RT320-0303
10.0 mW
C527RT320-0304
7.5 mW
C527RT320-0301
5.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DU Rev. -
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