RazerThin
®
Gen III LEDs
CxxxRT200-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC
®
substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
T200 Gen 3 Schematic
FEATURES
•
•
•
Thin 95 μm Chip
–
–
–
–
•
•
Reduced Forward Voltage
3.0 V Typical at 5 mA
460 nm - 10 mW min.
470 nm - 8 mW min.
527 nm - 2 mW min.
RazerThin LED Performance
APPLICATIONS
•
Mobile Phone Key Pads
–
–
–
•
•
•
•
White LEDs
Blue LEDs
Green LEDs
PRELIMINARY
Cellular Phone LCD Backlighting
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT200-Sxxxx Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3DS Rev
Data Sheet:
170 x 170 μm
G•SiC LED Chip
200 x 200 μm
Anode (+)
Gold Bond Pad
112 μm Diameter
Cathode (-)
t
= 95 μm
Backside
Metallization
90
μm square
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Note 2
CxxxRT200-Sxxxx
30 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
A
= 25°C, I
F
= 5 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C460RT200-Sxxxx
C470RT200-Sxxxx
C527RT200-Sxxxx
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
2.7
2.7
2.7
Typ.
3.0
3.0
3.1
Max.
3.3
3.3
3.4
Reverse Current
[I(Vr=5V), μA]
Max.
1
1
1
Full Width Half Max.
(λ
D
, nm)
Typ.
24
25
40
CxxxRT200-Sxxxx
Dimension
150 x 150
200 x 200
170 x 170
95
112
1.0
90
Tolerance
± 35
± 35
± 35
± 15
± 20
± 0.5
± 10
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products
shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxRT200-Sxx000) orders may be filled with any or all bins (CxxxRT200-xxxx) contained
in the kit. All radiant flux values shown and specified are at I
F
= 20 mA and dominant wavelength values are at I
F
= 5
mA.
C460RT200-S200
C460RT200-0309
C460RT200-0310
C460RT200-0306
C460RT200-0311
C460RT200-0307
C460RT200-0312
C460RT200-0308
Radiant Flux
14.0 mW
C460RT200-0305
12.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C460RT200-S000
462.5 nm
465 nm
Radiant Flux
C460RT200-0309
C460RT200-0310
C460RT200-0306
C460RT200-0302
C460RT200-0311
C460RT200-0307
C460RT200-0303
C460RT200-0312
C460RT200-0308
C460RT200-0304
14.0 mW
C460RT200-0305
12.0 mW
C460RT200-0301
10.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000 (continued)
Radiant Flux
C470RT200-S200
C470RT200-0313
C470RT200-0314
C470RT200-0310
C470RT200-0315
C470RT200-0311
C470RT200-0316
C470RT200-0312
14.0 mW
C470RT200-0309
12.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C470RT200-S000
472.5 nm
475 nm
Radiant Flux
C470RT200-0313
C470RT200-0314
C470RT200-0310
C470RT200-0306
C470RT200-0315
C470RT200-0311
C470RT200-0307
C470RT200-0316
C470RT200-0312
C470RT200-0308
14.0 mW
C470RT200-0309
12.0 mW
C470RT200-0305
10.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C470RT200-S0800
472.5 nm
475 nm
Radiant Flux
C470RT200-0313
C470RT200-0314
C470RT200-0310
C470RT200-0306
C470RT200-0302
C470RT200-0315
C470RT200-0311
C470RT200-0307
C470RT200-0303
C470RT200-0316
C470RT200-0312
C470RT200-0308
C470RT200-0304
14.0 mW
C470RT200-0309
12.0 mW
C470RT200-0305
10.0 mW
C470RT200-0301
8.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DS Rev. -
Standard Bins for CxxxRT200-Sxx000 (continued)
C527RT200-S0400
C527RT200-0310
C527RT200-0311
C527RT200-0308
C527RT200-0312
C527RT200-0309
Radiant Flux
5.0 mW
C527RT200-0307
4.0 mW
520 nm
525 nm
530 nm
Dominant Wavelength
C527RT200-S0300
535 nm
Radiant Flux
C527RT200-0310
C527RT200-0311
C527RT200-0308
C527RT200-0305
C527RT200-0312
C527RT200-0309
C527RT200-0306
5.0 mW
C527RT200-0307
4.0 mW
C527RT200-0304
3.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
C527RT200-S0200
Radiant Flux
C527RT200-0310
C527RT200-0311
C527RT200-0308
C527RT200-0305
C527RT200-0302
C527RT200-0312
C527RT200-0309
C527RT200-0306
C527RT200-0303
5.0 mW
C527RT200-0307
4.0 mW
C527RT200-0304
3.0 mW
C527RT200-0301
2.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DS Rev. -
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