Cree
®
EZ1000™ Gen II LEDs
Data Sheet
CxxxEZ1000-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
●
EZBright LED Technology
»
»
»
●
●
●
380 mW min. – 450 nm
360 mW min. – 460 nm
110 mW min. – 527 nm
APPLICATIONS
●
General Illumination
»
»
»
»
●
●
●
●
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms, or Flux
Eutectic Attach
Low Forward Voltage
White LEDs
LCD Backlighting
Projection Displays
Automotive
●
Dielectric Passivation across Epi Surface
CxxxEZ1000-Sxx000-2 Chip Diagram
Top View
EZBright LED
980 x 980 μm
2
Bottom View
Die Cross Section
.A
CPR3EC Rev
Data Sheet:
Dielectric
Passivation
Cathodes (-)
150 x 150 μm
2
t = 170 μm
Gold Bond Pads (2)
Backside Metalization
Anode (+)
3
μm AuSn
1
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Note 1, 2 & 3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 350 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450EZ1000-Sxx000-2
C460EZ1000-Sxx000-2
C527EZ1000-Sxx000-2
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
2.9
2.9
3.0
Typ.
3.2
3.2
3.4
Max.
3.8
3.8
4.0
Note 2
CxxxEZ1000-Sxx000-2
1000 mA
1250 mA
150°C
5 V
-40°C to +100°C
-40°C to +125°C
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
35
CxxxEZ1000-Sxx000-2
Dimensions
950 x 950
980 x 980
170
150 x 150
3.0
980 x 980
3.0
Tolerance
± 35
± 35
± 25
± 25
± 1.5
± 35
± 1.5
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to
optimize product performance.
1200
Maximum Forward Current (mA)
1000
800
600
400
Rth
j-a
= 10
Rth
j-a
= 15
Rth
j-a
= 20
Rth
j-a
= 25
°C/W
°C/W
°C/W
°C/W
200
0
25
50
75
100
125
150
175
Ambient Temperature (˚C)
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
2
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Standard Bins for CxxxEZ1000-Sxx000-2
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ1000-S38000-2
C450EZ1000-0221-2
C450EZ1000-0222-2
C450EZ1000-0223-2
C450EZ1000-0224-2
460 mW
Radiant Flux
C450EZ1000-0217-2
C450EZ1000-0218-2
C450EZ1000-0214-2
C450EZ1000-0210-2
C450EZ1000-0206-2
C450EZ1000-0219-2
C450EZ1000-0215-2
C450EZ1000-0211-2
C450EZ1000-0207-2
C450EZ1000-0220-2
C450EZ1000-0216-2
C450EZ1000-0212-2
C450EZ1000-0208-2
440 mW
C450EZ1000-0213-2
420 mW
C450EZ1000-0209-2
400 mW
C450EZ1000-0205-2
380 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
C460EZ1000-S36000-2
452.5 nm
455 nm
C460EZ1000-0221-2
C460EZ1000-0222-2
C460EZ1000-0223-2
C460EZ1000-0224-2
460 mW
Radiant Flux
C460EZ1000-0217-2
C460EZ1000-0218-2
C460EZ1000-0214-2
C460EZ1000-0210-2
C460EZ1000-0206-2
C460EZ1000-0202-2
C460EZ1000-0219-2
C460EZ1000-0215-2
C460EZ1000-0211-2
C460EZ1000-0207-2
C460EZ1000-0203-2
C460EZ1000-0220-2
C460EZ1000-0216-2
C460EZ1000-0212-2
C460EZ1000-0208-2
C460EZ1000-0204-2
440 mW
C460EZ1000-0213-2
420 mW
C460EZ1000-0209-2
400 mW
C460EZ1000-0205-2
380 mW
C460EZ1000-0201-2
360 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C527EZ1000-S11000-2
462.5 nm
465 nm
C527EZ1000-0213-2
C527EZ1000-0214-2
C527EZ1000-0215-2
190 mW
Radiant Flux
C527EZ1000-0210-2
C527EZ1000-0211-2
C527EZ1000-0208-2
C527EZ1000-0205-2
C527EZ1000-0202-2
C527EZ1000-0212-2
C527EZ1000-0209-2
C527EZ1000-0206-2
C527EZ1000-0203-2
170 mW
C527EZ1000-0207-2
150 mW
C527EZ1000-0204-2
130 mW
C527EZ1000-0201-2
110 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
3
CPR3EC Rev. A
Dominant Wavelength
3
2
1
0
-1
-2
25
50
75
100
125
150
Characteristic Curves
These are representative measurements for the EZBright 1000. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
300%
300%
250%
Junction Temperature (°C)
Relative Intensity vs. Forward Current
110%
105%
Relative Intensity vs. Junction Temperature
Relative Intensity
Relative Intensity
Relative Light Intensity
0
0
250
250
500
500
750
1000
1000
1250
1250
250%
200%
200%
150%
150%
100%
100%
95%
90%
85%
80%
75%
70%
65%
25
50
75
100
125
150
100%
50%
50%
0%
0%
If (mA)
750
If (mA)
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
12
9
12
1000
6
900
Forward Current vs. Forward Voltage
Wavelength Shift vs. Junction Temperature
Dominant Wavelength Shift (nm)
If (mA)
Wavelength Shift vs. Forward Current
800
5
6
9
DW ShiftShift (nm)
DW (nm)
3
6
0
3
700
4
600
3
500
2
400
300
1
200
0
100
-1
0
-2 0
25
1
50
2
75
3
4
125
5
150
-3
0
-6
-3
-9
-6
-12
-9
-12
0
0
250
250
500
500
750
1000
1000
1250
1250
Vf (V)
100
If (mA)
750
If (mA)
Junction Temperature (°C)
Forward Current vs. Forward Voltage
1000
900
800
0.100
110%
0.000
105%
Voltage Shift vs. Junction Temperature
Relative Intensity vs. Junction Temperature
600
500
400
300
200
100
0
Relative Light
Shift (V)
Voltage
Intensity
0
1
2
3
4
5
700
-0.100
100%
95%
-0.200
90%
-0.300
85%
-0.400
80%
75%
-0.500
70%
-0.600
65% 25
25
If (mA)
Vf (V)
50
50
75
100
75
Temperature (°C)
100
Junction
125
125
150
150
Junction Temperature (°C)
Voltage Shift vs. Junction Temperature
0.100
0.000
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
-0.100
Shift (V)
4
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
-0.200
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
5
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
