TR5050M™ LEDs
Data Sheet
CxxxTR5050M-Sxx000
Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5050M LEDs are among the brightest in the top-view market while delivering
a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic
die attach and enables superior performance from improved thermal management. The design is optimally suited for
industry-standard top-view packages.
FEATURES
•
•
•
•
•
•
Rectangular LED RF Performance
–
450 nm – 180 mW min
High-Reliability – Eutectic, Solder Paste or Preforms
Attach
Low Forward Voltage – 3.3 V Typical at 120 mA
Maximum DC Forward Current - 200 mA
Class 2 ESD Rating
InGaN Junction on Thermally Conductive SiC
Substrate
APPLICATIONS
•
•
•
Large LCD Backlighting
–
Television
General Illumination
Medium LCD Backlighting
–
–
•
•
Portable PCs
Monitors
LED Video Displays
White LEDs
CxxxTR5050M-Sxx000 Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3EX Rev
Data Sheet:
Cathode (-)
98-μm diameter
Anode (+)
90-μm diameter
TR5050M LED
500 x 500 μm
Bottom Surface
320 x 320 μm
Metal backside
288 x 288 μm
t = 175 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Note 4
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 120 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR5050M-Sxx000
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Diamater Cathode (μm)
2.7
Typ.
3.3
Max.
3.5
Note 3
CxxxTR5050M-Sxx000
200 mA
250 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
CxxxTR5050M-Sxx000
Dimension
426 x 443
500 x 500
175
90
1.0
98
Tolerance
±35
±35
±15
±10
±0.5
±10
±25
±45
±1.0
Notes:
1.
Max If (mA)
Bottom Area (μm)
Max Vf @Max If (V)
Bottom Contact Metal Thickness (μm)
Max Tj (Deg C)
Max Power (W)
Bottom Contact Metal (um)
200
3.5
150
0.7
288 x 288
320 x 320
3.0
2.
3.
4.
Maximum ratings are package-dependent. The
(C/W)
ratings
10
were determined using lamps in chip-on-MCPCB (metal core PCB) packages for
Thermal Resistance
above
20
30
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature must not exceed 325°C (< 5 seconds).
Rth (
j-A)
=
If @ Tamb
Tamb
Tamb
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
200
25
25
25
The RAET procedures are designed to approximate the maximum ESD ratings shown.
200
143
136
129
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120
0
150
150
150
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
250
Maximum Forward Current (mA)
200
150
100
50
Rth
j-a
= 10
Rth
j-a
= 20
Rth
j-a
= 30
Rth
j-a
= 40
C/W
C/W
C/W
C/W
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EX Rev. -
Standard Bins for CxxxTR5050M-Sxx000
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxTR5050M-Sxxxx) orders may be filled with any or all bins (CxxxTR5050M-xxxx)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA.
Radiant Flux (mW)
450TR5050M-S18000
C450TR5050M-0213
C450TR5050M-0214
C450TR5050M-0210
C450TR5050M-0206
C450TR5050M-0215
C450TR5050M-0211
C450TR5050M-0207
C450TR5050M-0216
C450TR5050M-0212
C450TR5050M-0208
220.0
C450TR5050M-0209
200.0
180.0
445
C450TR5050M-0205
447.5
450
Dominant Wavelength (nm)
452.5
455
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EX Rev. -
Relative Light
100%
50%
Characteristic Curves
0%
0
50
100
150
200
If (mA)
These are representative measurements for the TR5050M LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Forward Current vs. Forward Voltage
250
250
3
Wavelength Shift vs. Forward Current
If (mA)
Dominant Wavelength Shift (nm)
200
2
150
1
100
0
200
If (mA)
150
100
-1
50
-2
0
-3
0
0
1
50
2
3
4
150
5
200
50
0
0
1
2
3
4
5
Vf (V)
100
If (mA)
Dominant Wavelength Shift vs Junction Temp
6
Vf (V)
Voltage Shift
Wavelength Shift (nm)
Dominant
(V)
Relative Light Intensity
5
200%
4
0.000
3
-0.050
150%
2
-0.100
1
-0.150
100%
0
-0.200
-1
-0.250
50%
-2
-0.300 25
-0.350
0%
-0.400
0
25
Relative Intensity vs. Forward Current
Voltage Shift vs Junction Temperature
Voltage Shift vs Junction Temperature
0.000
-0.050
-0.100
Voltage Shift (V)
50
75
100
125
150
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
Junction Temperature (°C)
50
100
150
200
25
50
75
100
125
150
50
75
If (mA)
100
125
150
Junction Temperature (°C)
Junction Temperature (°C)
Relative Light Intensity Vs Junction Temperature
100%
6
Dominant Wavelength Shift vs Junction Temp
Dominant Wavelength Shift (nm)
150
5
4
3
2
1
0
-1
-2
25
50
75
100
125
150
Relative Light (nm)
Dominant Wavelength ShiftIntensity
95%
3
90%
2
85%
1
80%
0
75%
-1
70%
-2 25
-3
0
Wavelength Shift vs. Forward Current
50
75
100
125
Junction Temperature (°C)
50
100
150
200
Junction Temperature (°C)
If (mA)
Relative Light Intensity Vs Junction Temperature
100%
4
CPR3EX Rev. -
t Intensity
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
95%
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
90%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the TR5050M LED product. Actual patterns will vary slightly for each chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EX Rev. -
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
