Cree
®
TR2432™ LEDs
Data Sheet
CxxxTR2432-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting
in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is
optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top
contacts, consistent with industry standard packaging.
FEATURES
•
Rectangular LED RF Performance
− 450 & 460 nm – 27 mW min.
–
–
•
•
•
•
470 nm – 24 mW min.
527 nm – 9 mW min.
APPLICATIONS
•
Small LCD Backlighting – 0.8 mm, 0.6 mm &
0.4 mm sideview packages
− Mobile Appliances
− Digital Cameras
− Car Navigation Systems
•
Medium LCD Backlighting – 0.8 mm, 0.6 mm &
0.4 mm sideview packages
− Portable PCs
− Monitors
•
•
LED Video Displays
Entertainment Systems
Epoxy Die Attach
Low Forward Voltage - 3.1 V Typical at 20 mA
1000-V ESD Threshold Rating
InGaN Junction on Thermally Conductive SiC
Substrate
CxxxTR2432-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
B
CPR3DQ Rev
Data Sheet:
Gold Bond Pad
Anode (+)
90 μm Diameter
TR2432 LED
240 x 320 μm
Gold Bond Pad
Cathode (-)
90 x 90 μm
Backside
Bottom Surface
140 x 220 μm
t = 115 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
LED Chip Storage Temperature Range
Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR2432-Sxx00
C460TR2432-Sxx00
C470TR2432-Sxx00
C527TR2432-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
2.7
2.7
2.7
2.9
Typ.
3.1
3.1
3.1
3.2
Max.
3.4
3.4
3.4
3.6
Note 3
CxxxTR2432-Sxx00
30 mA
100 mA
125°C
5 V
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
21
35
CxxxTR2432-Sxx00
Dimension
200 x 280
240 x 320
115
90
1.0
90 x 90
140 x 220
Tolerance
±35
±35
±15
-5, +15
±0.5
-5, +15
±35
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DQ Rev B
Standard Bins for CxxxTR2432-Sxx00
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR2432-Sxxxx) orders may be filled with any or all bins (CxxxTR2432-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
TR 450 nm Kits
C450TR2432-S2400
Radiant Flux (mW)
C450TR2432-0317
C450TR2432-0318
C450TR2432-0314
C450TR2432-0310
C450TR2432-0306
C450TR2432-0319
C450TR2432-0315
C450TR2432-0311
C450TR2432-0307
C450TR2432-0320
C450TR2432-0316
C450TR2432-0312
C450TR2432-0308
35
C450TR2432-0313
33
C450TR2432-0309
30
C450TR2432-0305
27
445
447.5
450
Dominant Wavelength (nm)
452.5
455
TR 460 nm Kits
C460TR2432-S2400
Radiant Flux (mW)
C460TR2432-0317
C460TR2432-0318
C460TR2432-0314
C460TR2432-0310
C460TR2432-0306
C460TR2432-0319
C460TR2432-0315
C460TR2432-0311
C460TR2432-0307
C460TR2432-0320
C460TR2432-0316
C460TR2432-0312
C460TR2432-0308
35
C460TR2432-0313
33
C460TR2432-0309
30
C460TR2432-0305
27
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DQ Rev B
Standard Bins for CxxxTR2432-Sxx00 (continued)
TR 470 nm Kits
C470TR2432-S2100
Radiant Flux (mW)
C470TR2432-0313
C470TR2432-0314
C470TR2432-0310
C470TR2432-0306
C470TR2432-0302
C470TR2432-0315
C470TR2432-0311
C470TR2432-0307
C470TR2432-0303
C470TR2432-0316
C470TR2432-0312
C470TR2432-0308
C470TR2432-0304
33
C470TR2432-0309
30
C470TR2432-0305
27
C470TR2432-0301
24
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength (nm)
TR 527 nm Kits
C527TR2432-S0700
Radiant Flux (mW)
C527TR2432-0310
C527TR2432-0311
C527TR2432-0308
C527TR2432-0305
C527TR2432-0302
C527TR2432-0312
C527TR2432-0309
C527TR2432-0306
C527TR2432-0303
15
C527TR2432-0307
13
C527TR2432-0304
11
C527TR2432-0301
9
520
525
530
535
Dominant Wavelength (nm)
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DQ Rev B
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
100
90
80
70
8
Wavelength Shift vs. Forward Current
6
4
2
If (mA)
60
50
40
Shift (nm)
0
-2
-4
30
20
10
0
-6
-8
-10
-12
-14
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
90
100
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
350%
120
Relative Intensity vs Peak Wavelength
Relative Intensity (%)
100
80
60
40
20
Relative Intensity (%)
300%
250%
200%
150%
100%
50%
0%
0
0
10
20
30
40
50
60
70
80
90
100
320
420
520
620
If (mA)
Wavelength (nm)
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DQ Rev B
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