Cree
®
EZ500™ Gen II LED
Data Sheet
CxxxEZ500-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
•
EZBright Power Chip LED Rf Performance
–
–
–
•
•
•
•
•
●
110 mW min. @ 150 mA – 450 & 460 nm
90 mW min. @ 150 mA - 470 nm
40 mW min. @ 150 mA - 527 nm
APPLICATIONS
•
General Illumination
–
–
–
–
–
•
•
•
Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.4 V Typical at 150 mA
Single Wire Bond Structure
Maximum DC Forward Current - 300 mA
Dielectric Passivation Across Epi Surface
White LEDs
Crosswalk Signals
Television Backlighting
CxxxEZ500-Sxxx00-2 Chip Diagram
Top View
EZBright LED Chip
480 x 480 μm
2
Backside
Metallization
Gold Bond Pad
130 x 130 μm
2
t = 170 μm
Cathode (-)
Bottom View
Die Cross Section
.-
CPR3EB Rev
Data Sheet:
Anode (+);
3 μm AuSn
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Note 1
DC Forward Current
Peak Forward Current
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 150 mA
Part Number
Forward Voltage (V
F
, V)
Min.
C450EZ500-Sxxx00-2
C460EZ500-Sxxx00-2
C470EZ500-Sxxx00-2
C527EZ500-Sxxx00-2
Mechanical Specifications
Description
P-N Junction Area (µm)
Chip Area (µm)
Chip Thickness (µm)
Top Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
Back Contact Metal Area (µm)
Back Contact Metal Thickness (µm)
3.1
3.1
3.1
3.1
Typ.
3.4
3.4
3.4
3.5
Max.
4.1
4.1
4.1
4.1
Note 2
CxxxEZ500-Sxxx00-2
300 mA
400 mA
Note 3
145°C
5 V
-40°C to +100°C
-40°C to +120°C
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
19
20
23
35
CxxxEZ500-Sxxx00-2
Dimension
450 x 450
480 x 480
170
130 x 130
3.0
480 x 480
3.0
Tolerance
±40
±40
±25
±15
±1.0
±40
±1.0
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
3. This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of
65°C.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EB Rev. -
Standard Bins for CxxxEZ500-Sxxx00-2
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ500-S11000-2
Radiant Flux
C450EZ500-0213-2
C450EZ500-0214-2
C450EZ500-0215-2
C450EZ500-0216-2
150 mW
C450EZ500-0209-2
C450EZ500-0210-2
C450EZ500-0206-2
C450EZ500-0211-2
C450EZ500-0207-2
C450EZ500-0212-2
C450EZ500-0208-2
130 mW
C450EZ500-0205-2
110 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
C460EZ500-S11000-2
452.5 nm
455 nm
Radiant Flux
C460EZ500-0213-2
C460EZ500-0214-2
C460EZ500-0215-2
C460EZ500-0216-2
150 mW
C460EZ500-0209-2
C460EZ500-0210-2
C460EZ500-0206-2
C460EZ500-0211-2
C460EZ500-0207-2
C460EZ500-0212-2
C460EZ500-0208-2
130 mW
C460EZ500-0205-2
110 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C470EZ500-S09000-2
462.5 nm
465 nm
Radiant Flux
C470EZ500-0209-2
C470EZ500-0210-2
C470EZ500-0211-2
C470EZ500-0212-2
130 mW
C470EZ500-0205-2
C470EZ500-0206-2
C470EZ500-0202-2
C470EZ500-0207-2
C470EZ500-0203-2
C470EZ500-0208-2
C470EZ500-0204-2
110 mW
C470EZ500-0201-2
90 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C527EZ500-S3000-2
472.5 nm
475 nm
Radiant Flux
C527EZ500-0207-2
C527EZ500-0208-2
C527EZ500-0209-2
60 mW
C527EZ500-0204-2
C527EZ500-0205-2
C527EZ500-0202-2
C527EZ500-0206-2
C527EZ500-0203-2
45 mW
C527EZ500-0201-2
30 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EB Rev. -
Dominant Wav
1
0
-1
-2
25
50
75
100
125
150
Characteristic Curves
Junction Temperature (°C)
These are representative measurements for the EZBright500. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Forward Current vs. Forward Voltage
Relative Light Intensity vs Junction Temperature
100%
300
250
200
Relative Light Intensity
0
1
2
3
4
5
95%
90%
85%
80%
If (mA)
150
100
50
0
75%
70%
65%
25
50
75
100
125
150
Vf (V)
Junction Temperature (°C)
Relative Intensity vs. Forward Current
175%
175%
150%
Voltage Shift vs Junction Temperature
0.100
0.000
Relative Intensity vs. Forward Current
Mean(Vf Shift)
Voltage Shift (V)
Relative Intensity
Relative Intensity
150%
125%
125%
100%
100%
-0.100
-0.200
-0.300
75%
50%
25%
0%
0
0
75%
50%
25%
-0.400
-0.500
0%
50
50
100
100
150
150
If (mA)
If (mA)
200
200
250
250
300
300
350
350
-0.600
25
50
75
100
125
150
Junction Temperature (°C)
EZ400
Mean(Vf Shift)
12
12
Dominant Wavelength Shift (nm)
16
16
Wavelength Shift vs. Forward Current
Wavelength Shift vs. Forward Current
6
5
4
3
Dominant Wavelength Shift vs Junction Temperature
DW Shift
(nm)
DW Shift
(nm)
8
8
4
4
0
0
-4
-4
-8
-8
2
1
0
-1
-2
25
50
75
100
125
150
0
0
50
50
100
100
150
150
200
200
250
250
300
300
350
350
If (mA)
If (mA)
Junction Temperature (°C)
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
100%
Relative Light Intensity vs Junction Temperature
4600 Silicon Drive
Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
sity
4
CPR3EB Rev. -
95%
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EB Rev. -
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
