Cree
®
EZ1400™ Gen II LEDs
Data Sheet
CxxxEZ1400-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, projection displays and camera flash.
FEATURES
●
●
●
●
EZBright LED Technology
»
800 mW min. @ 1000 mA - 450 & 460 nm
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms, or Flux
Eutectic Attach
Low Forward Voltage
APPLICATIONS
●
General Illumination
»
»
»
»
●
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●
●
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
●
Dielectric Passivation across Epi Surface
White LEDs
Projection Displays
Automotive
Camera Flash
CxxxEZ1400-Sxx000-2 Chip Diagram
Top View
Die Cross Section
1380 x 1380 μm
Anode (+)
AuSn
Bottom View
.-
CPR3EK Rev
Data Sheet:
Mesa (Junction)
1350 x 1350 μm
Thickness
170
μm
Cathodes (-)
150 x 150 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Note 1
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 1000 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450EZ1400-Sxx000-2
C460EZ1400-Sxx000-2
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
3.3
3.3
Typ.
3.7
3.7
Max.
4.3
4.3
Note 2
CxxxEZ1400-Sxx000-2
1500 mA
1500 mA
145°C
5V
-40°C to +100°C
-40°C to +125°C
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxEZ1400-Sxx000-2
Dimensions
1350 x 1350
1380 x 1380
170
150 x 150
3.0
1380 x 1380
3.0
Tolerance
± 35
± 35
± 25
± 25
± 1.5
± 35
± 1.5
Notes:
1.
2.
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 1000 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
2
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Standard Bins for CxxxEZ1400-Sxx000-2
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1400-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1400-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 1000 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ1400-S80000-2
C450EZ1400-0217-2
C450EZ1400-0218-2
C450EZ1400-0214-2
C450EZ1400-0210-2
C450EZ1400-0206-2
C450EZ1400-0219-2
C450EZ1400-0215-2
C450EZ1400-0211-2
C450EZ1400-0207-2
C450EZ1400-0220-2
C450EZ1400-0216-2
C450EZ1400-0212-2
C450EZ1400-0208-2
Radiant Flux
1250 mW
C450EZ1400-0213-2
1100 mW
C450EZ1400-0209-2
950 mW
C450EZ1400-0205-2
800 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
C460EZ1400-S80000-2
452.5 nm
455 nm
Radiant Flux
C460EZ1400-0217-2
C460EZ1400-0218-2
C460EZ1400-0214-2
C460EZ1400-0210-2
C460EZ1400-0206-2
C460EZ1400-0219-2
C460EZ1400-0215-2
C460EZ1400-0211-2
C460EZ1400-0207-2
C460EZ1400-0220-2
C460EZ1400-0216-2
C460EZ1400-0212-2
C460EZ1400-0208-2
1250 mW
C460EZ1400-0213-2
1100 mW
C460EZ1400-0209-2
950 mW
C460EZ1400-0205-2
800 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
3
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
DW Shif
3
2
1
0
Characteristic Curves, T
A
= 25°C
25
50
75
100
125
150
Junction Temperature (°C)
This is a representative measurement for the EZ1400 LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
1500
1250
If (mA)
1000
750
500
250
0
0
1
2
3
4
5
Relative Light Intensity (%)
Relative Light Intensity vs. Junction Temperature
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
25
50
75
100
125
150
Junction Temperature (°C)
Relative Intensity
Vf (V)
vs. Forward Current
150%
125%
150%
100%
125%
75%
100%
50%
75%
25%
50%
0%
25% 0
0%
Relative Intensity vs. Forward Current
Dominant Wavelength Shift vs. Junction Temperature
6
5
% Intensity
% Relative Relative Intensity
DW Shift (nm)
4
3
2
250
500
750
If (mA)
1000
1250
1500
1
0
0
250
500
750
If (mA)
1000
1250
1500
25
50
75
100
125
150
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
3
2.5
DW Shift (nm)
DW Shift (nm)
2
3
1.5
2.5
1
2
0.5
1.5
0
1
-0.5
0.5
-1
0
-0.5
-1
0
250
500
0
250
500
750
If (mA)
750
If (mA)
1000
1250
1500
1000
1250
1500
0.000
Voltage Shift vs. Junction Temperature
Relative
-0.050
Voltage
(%)
Relative Light Intensity
Shift (V)
1.00
-0.100
0.95
-0.150
0.90
-0.200
0.85
-0.250
0.80
0.75
-0.300
0.70
-0.350
0.65 25
0.60
25
50
50
75
100
125
150
150
Wavelength Shift vs. Forward Current
Light Intensity vs. Junction Temperature
Junction Temperature (°C)
75
100
125
Junction Temperature (°C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
4
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
5
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
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