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Min
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3.30
3.94
4.06
4.70
1.91
2.11
0.152 0.305
5.08
5.59
2.13
2.44
0.051 0.203
0.76
1.27
in mm
0.130 0.155
0.160 0.185
0.075 0.083
0.006 0.012
0.2 0.220
0.084 0.096
0.002 0.008
0.029 0.05
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C
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Measured at
Zero Bias
P E AK P ULS E DE R AT ING IN % OF
P E AK P OWE R OR C UR R E NT
75
1,000
50
100
25
10 X 1000 Waveform
as defined by R E A
V
R
, Measured at
S tand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
T
J
= 25 C
f = 1.0MHz
Vsig = 50mVp-p
100
200
0
0
25
50
75
100 125 150 175 200
T
A
, AMB IE NT T E MP E R AT UR E (
°
C )
F ig. 1 P uls e Derating C urve
100
10
1
10
V
WM
, S TANDOF F V OLTAG E (V )
F ig. 2 Typical J unction C apacitance
P
d
, P E AK P ULS E P OWE R (kW)
T
j
= 25
°
C
Non R epetitive
P uls e Waveform
10
1.0
0.1
0.1
1.0
10
100
1000
10000
t
p
P ULS E WIDT H (
m
s )
F ig. 3 P uls e R ating C urve
I
P
, P E AK P ULS E C
p
UR R E NT (%I
p
)
t
r
= 10
m
s
100
P eak Value I
pp
Half Value I
pp
/2
50
t
p
0
10 X 1000 Waveform
as defined by R .E .A.
0
1
2
3
t, T IME (ms )
F ig. 4 P uls e Waveform
S MB J S E R IE S
2 of 4
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SEMICONDUCTOR
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