Preliminary
Datasheet
HITK0204MP
20V, 2.3A, 130mmax.
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 100 m typ (V
GS
= 4.5 V, I
D
= 1.2 A)
Low drive current
High speed switching
2.5 V gate drive
R07DS0482EJ0200
Rev.2.00
May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
1
2
S
1
G
1. Source
2. Gate
3. Drain
Note:
Marking is “TV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
20
12
2.3
8.0
2.3
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0482EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
HITK0204MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
20
12
—
—
0.4
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
100
146
3.0
127
33
14
11
28
24
7
1.5
0.3
0.4
0.85
Max
—
—
10
1
1.4
130
204
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
GS
=
10
V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.2 A, V
GS
= 4.5 V
Note3
I
D
= 1.2 A, V
GS
= 2.5 V
Note3
I
D
= 1.2 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1.2 A
V
GS
= 10 V
R
L
= 8.3
Rg = 4.7
V
DD
= 10 V
V
GS
= 5 V
I
D
= 2.3 A
I
F
= 2.3 A, V
GS
= 0
Note3
R07DS0482EJ0200 Rev.2.00
May 09, 2013
Page 2 of 6
HITK0204MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
100
Operation in this area
is limited by R
DS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
10
1
m
10
0
10
μ
s
0.6
s
PW
s
m
1
D
=
C
10
0
0.4
O
pe
m
s
ra
tio
0.2
0
0.1
Ta = 25°C
1 Shot Pulse
n
0
50
100
150
0.01
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
10 V
7V
5V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
8
V
DS
= 10 V
Pulse Test
25°C
3.0 V
Drain Current I
D
(A)
6
Drain Current I
D
(A)
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
3.2 V
3.4 V
5V
6
Tc = –25°C
75°C
4
4
2
1.8 V
1.6 V
2
0
V
GS
= 0 V
0
2
4
6
8
10
0
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
1.5
V
DS
= 10 V
Pulse Test
I
D
= 10 mA
1.0
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
0.5
1 mA
0.1 mA
0.001
–25°C
0.0001
0
0.5
1
1.5
2
2.5
3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0482EJ0200 Rev.2.00
May 09, 2013
Page 3 of 6
HITK0204MP
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
400
300
2.3 A
1.2 A
0.8 A
V
GS
= 2.5 V
100
4.5 V
10 V
200
100
0.5 A
0
0
2
4
6
8
10
10
0.1
1
10
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
300
I
D
= 2.3 A
1.2 A
200
200
Pulse Test
V
GS
= 4.5 V
I
D
= 2.3 A
150
1.2 A
250
150
0.5 A
100
50
–25
0.8 A
100
0.5 A
0.8 A
Pulse Test
V
GS
=
2
.5 V
0
25
50
75
100 125 150
50
–25
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
1000 V
DS
= 20 V
100
Forward Transfer Admittance
|yfs| (S)
10
Pulse Test
V
DS
= 10 V
–25°C
1
25°C
Tc = 75°C
0.1
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
10
1
0.1
–25
0.01
0.01
0.1
1
10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
R07DS0482EJ0200 Rev.2.00
May 09, 2013
Page 4 of 6
HITK0204MP
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
16
1000
Preliminary
Switching Characteristics
V
DD
= 10 V
V
GS
= 4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
tr
30
12
10 V
5V
20
V
DD
= 20 V
10 V
10
5V
V
DS
0
1
2
I
D
= 2.3 A
Tc = 25°C
3
4
0
4
V
GS
8
Switching Time
t (ns)
V
DD
= 20 V
100
td(off)
10
td(on)
tf
0
1
0.1
1
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
250
240
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
100
Coss
Crss
10
V
GS
= 0 V
f = 1 MHz
230
Ciss (pF)
220
210
200
190
180
170
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
1
0
5
10
15
20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
8
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
V
GS
= 0
0.6
0.5
I
D
= 10 mA
0.4
0.3
0.2
0.1
25
1 mA
Reverse Drain Current I
DR
(A)
10 V
6
5V
Pulse Test
Tc = 25°C
4
2
–5, –10 V
0
0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
Body-Drain Diode Forward Voltage V
SDF
(V)
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0482EJ0200 Rev.2.00
May 09, 2013
Page 5 of 6
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