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Datasheet> 器件分类 > 分立半导体> 晶体管> RN4606TE85L

RN4606TE85L: 产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小218KB，共5页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN4606TE85L概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4606TE85L规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN AND PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
VCEsat-Max	0.3 V

RN4606TE85L相似产品对比

	RN4606TE85L	RN4606TE85N	RN4606(TE85L)	RN4606(TE85R)	RN4606TE85R
描述	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.1	BUILT-IN BIAS RESISTOR RATIO IS 0.1	BUILT-IN BIAS RESISTOR RATIO IS 0.1	BUILT-IN BIAS RESISTOR RATIO IS 0.1	BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	80	80	80	80
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2
端子数量	6	6	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
基于收集器的最大容量	6 pF	6 pF	-	-	6 pF
最高工作温度	150 °C	150 °C	-	-	150 °C
VCEsat-Max	0.3 V	0.3 V	-	-	0.3 V
ECCN代码	-	EAR99	EAR99	EAR99	-

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