Reverse Breakdown Current ............................................................ 10mA
Forward Current ............................................................................... 10mA
Operating Temperature ................................................. –55°C to +125°C
Storage Temperature .................................................... –65°C to +150°C
Junction Temperature .................................................................. +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
(1) Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade device
reliability. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those specified is not implied.
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from performance
degradation to complete device failure. Texas Instruments recom-
mends that all integrated circuits be handled and stored using appro-
priate ESD protection methods.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet published specifications.
PACKAGE/ORDERING INFORMATION
PACKAGE
DESIGNATOR
(1)
DBZ
SPECIFIED
TEMPERATURE
RANGE
–40°C to +125°C
PACKAGE
MARKING
R11A
ORDERING
NUMBER
REF1112AIDBZT
REF1112AIDBZR
TRANSPORT
MEDIA, QUANTITY
Tape and Reel, 250
Tape and Reel, 3000
PRODUCT
REF1112
PACKAGE-LEAD
SOT23-3
"
"
"
"
"
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PRELIMINARY ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range,
T
A
= –40°C to +125°C.
At T
A
= +25°C, I
REF
= 1.2µA, and C
LOAD
= 10nF, unless otherwise noted.
REF1112 - 1.25V
PARAMETER
REVERSE BREAKDOWN VOLTAGE
CONDITIONS
I
REF
= 1.2µA
1.2475
-0.2
TEMPERATURE COEFFICIENT
1.2µA
<
I
REF
<
5mA
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
1.25
1.2525
+ 0.2
30
50
1.2
100
0.125
V
%
ppm/°C
ppm/°C
ppm/°C
µA
ppm/mA
Ω
µV
PP
ppm
ppm/kHr
+125
+125
+150
135
°C
°C
°C
°C/W
MIN
TYP
MAX
UNITS
10
15
15
1
30
MINIMUM OPERATING CURRENT
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT
REVERSE DYNAMIC IMPEDANCE
LOW-FREQUENCY NOISE
(1)
0.1Hz
<
I
REF
<
10Hz
THERMAL HYSTERESIS
(2)
LONG-TERM STABILITY
+25°C ± 0.1°C
TEMPERATURE CHARACTERISTICS
Specified Range
Operating Range
Storage Range
Thermal Resistance
θ
JA
SOT23-3 Surface-Mount
1.2µA
<
I
REF
<
5mA
1.2µA
<
I
REF
<
5mA
0.037
25
100
60
–40
–55
–65
(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole low-pass chebyshev filter at 10Hz.
(2) Thermal hysteresis is defined as the change in output voltage after operating the device at 25°C, cycling the device through the specified temperature range, and
returning to 25°C.
2
www.ti.com
REF1112
SBOS283
TYPICAL CHARACTERISTICS
At T
A
= +25°C, I
REF
=
10µA and C
L
= 10nF, unless otherwise specified.
10K
1K
REVERSE CHARACTERISTICS
-40°C
≤
T
A
≤
125°C
1.0
FORWARD CHARACTERISTICS
T
A
= 25°C
0.8
Reverse Current (µA)
100
10
1
0.1
0.01
0.00
Forward Voltage (V)
Voltage Regulation
Region
0.6
Behaves as standard
silicon diode
0.4
0.2
0.0
0.25
0.50
0.75
1.00
1.25
1.50
0.001
0.01
Reverse Voltage (V)
0.1
1.0
Forward Current (mA)
10
TEMPERATURE DRIFT
1.255
1.254
REVERSE VOLTAGE CHANGE vs CURRENT
0.5
-40°C
≤
T
A
≤
125°C
0.4
1.253
1.252
1.251
1.250
1.249
1.248
−55
Output Voltage Change (mV)
Reverse Voltage (V)
0.3
0.2
0.1
0.0
−35
−15
5
25
45
65
85
105
125
0.001
0.01
Temperature (°C)
0.1
Reverse Current (mA)
1
10
REVERSE DYNAMIC IMPEDANCE
100
-40°C
≤
T
A
≤
125°C
10k
REVERSE DYNAMIC IMPEDANCE
T
A
= +25°C
Dynamic Impedance (Ω)
10
Dynamic Impedance (Ω)
f = 10Hz
1k
I
REF
= 10µA
100
10
1
0.1
I
REF
= 5mA
1
0.1
0.01
0.001
0.01
0.1
Reverse Current (mA)
1
10
0.01
1
10
100
1k
Frequency (Hz)
10k
100k
REF1112
SBOS283
3
www.ti.com
TYPICAL CHARACTERISTICS
(Cont.)
At T
A
= +25°C, I
REF
=
10µA and C
L
= 10nF, unless otherwise specified.
REVERSE BREAKDOWN VOLTAGE DISTRIBUTION
25
50
TEMPERATURE DRIFT DISTRIBUTION
0°C to +70°C
20
Distribution (%)
Distribution (%)
40
15
30
10
20
5
10
0
1.2475
1.2500
Reverse Breakdown Voltage (V)
1.2525
0
0
5
10
15
20
25
30
35
Drift (ppm/°C)
TEMPERATURE DRIFT DISTRIBUTION
25
−40°C
to +85°C
20
Distribution (%)
LOW-FREQUENCY NOISE, 0.1 to 10Hz
10
5
0
0
5
10
15
20 25 30
Drift (ppm/°C)
35
40
45
50
10µV/div
15
1.0s/div
RESPONSE TIME
C
LOAD
= 0.01µF
2V
1V
V
IN
RESPONSE TIME
C
LOAD
= 0.1µF
2V
1V
V
IN
Voltage (V)
V
OUT
375kΩ
Voltage (V)
0V
0.01µF
V
OUT
V
OUT
0V
I
REF
375kΩ
V
OUT
0.1µF
5V
V
IN
5V
V
IN
0V
0V
10ms/div
25ms/div
4
www.ti.com
REF1112
SBOS283
APPLICATIONS INFORMATION
The REF1112 is a two-terminal bandgap reference diode
designed for high accuracy with outstanding temperature
characteristics at low operating currents. Precision thin-film
resistors result in 0.2% initial voltage accuracy and 50ppm/°C
maximum temperature drift. The REF1112 is specified from
–40°C to +85°C, with operation from –40°C to +125°C, and is
offered in a SOT23-3 package.
Typical connections for the REF1112 are shown in Figure 1.
A minimum 1µA bias current is required to maintain a stable
output voltage and can be provided with a resistor con-
nected to the supply voltage. I
BIAS
depends on the values
selected for R
BIAS
and V
S
, and will vary as a sum of the
minimum operating current and the load current. To main-
tain stable operation, the value of R
BIAS
must be low
enough to maintain the minimum operating current at the
minimum and maximum load and supply voltage levels.
.
V
S
10kΩ
I
SET
V
REF
R
SET
I
SET
=
0.1µF
R
SET
FIGURE 2. REF1112 Provides a Stable Current Source.
3V
V
S
795kΩ
3V
250kΩ
TLV2401
V
REF
V
OUT
= 1V
R
BIAS
1µF
I
BIAS
= I
REF
+ I
LOAD
V
REF
I
LOAD
0.1µF
REF1112
1MΩ
0.1µF
I
REF
I
BIAS
=
V
S
- V
REF
R
BIAS
FIGURE 3. MicroPOWER 3µA 1V Voltage Reference.
FIGURE 1. Typical Connections.
A 0.1µF load capacitor is recommended to maintain stabil-
ity under varying load conditions. A minimum 0.01µF load
capacitor is required for stable operation. Start-up time for
the REF1112 will be affected, depending on the value of
load capacitance and the bias currents being used. A 1µF
power supply bypass capacitor is recommended to mini-
mize supply noise within the circuit.
The REF1112 shunt voltage reference provides a versatile
function for low power and space-conservative applications.
The REF1112 can be configured with an additional diode
and NPN transistor to provide a temperature compensated
current reference as shown in Figure 2. The REF112 can be
scaled to provide extremely low power reference voltages.
Figure 3 shows the REF1112 used as a 1V out, 3µA voltage
reference, and in Figure 4 a 2.5V reference on 1µA.
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