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16
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39
E3
TO-220
MT2
MT1
T
Quadrac
Internally Triggered Triacs (4 A to 15 A)
E3
General Description
Teccor’s
Quadrac
devices are triacs that include a diac trigger
mounted inside the same package. This device, developed by
Teccor, saves the user the expense and assembly time of buying
a discrete diac and assembling in conjunction with a gated triac.
Also, the alternistor
Quadrac
device (QxxxxLTH) eliminates the
need for a snubber network.
The
Quadrac
device is a bidirectional AC switch and is gate con-
trolled for either polarity of main terminal voltage. Its primary pur-
pose is for AC switching and phase control applications such as
speed controls, temperature modulation controls, and lighting
controls where noise immunity is required.
Triac current capacities range from 4 A to 15 A with voltage
ranges from 200 V to 600 V.
Quadrac
devices are available in the
TO-220 package.
The TO-220 package is electrically isolated to 2500 V rms from
the leads to mounting surface. 4000 V rms is available on special
order. This means that no external isolation is required, thus
eliminating the need for separate insulators and insulator-mount-
ing steps and saving dollars over “hot tab” devices.
All Teccor triac and diac chips have glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Variations of devices in this data sheet are available for custom
design applications. Consult the factory for more information.
Features
•
•
•
•
•
Glass-passivated junctions
Electrically-isolated package
Internal trigger diac
High surge capability — up to 200 A
High voltage capability — 200 V to 600 V
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 1
http://www.teccor.com
+1 972-580-7777
Quadrac
Data Sheets
Part No.
I
T(RMS)
(5)
Isolated
Trigger Diac Specifications (T–MT1)
V
DRM
(1)
I
DRM
(1) (10)
V
TM
(1) (3)
∆V
BO
(7)
V
BO
(6)
[∆V± ]
(6)
I
BO
C
T
(11)
MT1
T
MT2
mAmps
Volts
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
T
C
=
25 °C
T
C
=
100 °C
MAX
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
T
C
=
125 °C
Volts
T
C
= 25 °C
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
Volts
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
Volts
MIN
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
MAX
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
Volts
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
µFarads
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
TO-220
See “Package Dimensions” section
for variations. (12)
4A
Q2004LT
Q4004LT
Q6004LT
Q2006LT
Q4006LT
6A
Q6006LT
Q4006LTH
Q6006LTH
Q2008LT
Q4008LT
8A
Q6008LT
Q4008LTH
Q6008LTH
Q2010LT
Q4010LT
10 A
Q6010LT
Q4010LTH
Q6010LTH
Q2015LT
Q4015LT
15 A
Q6015LT
Q4015LTH
Q6015LTH
Specific Test Conditions
[∆V±]
— Dynamic breakback voltage (forward and reverse)
∆V
BO
— Breakover voltage symmetry
C
T
— Trigger firing capacitance
di/dt
— Maximum rate-of-change of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
I
for fusing
I
BO
— Peak breakover current
I
DRM
— Peak off-state current gate open; V
DRM
= maximum rated value
I
GTM
— Peak gate trigger current (10
µ
s Max)
I
H
— Holding current; gate open
I
T(RMS)
— RMS on-state current, conduction angle of 360°
I
TSM
— Peak one-cycle surge
t
gt
— Gate controlled turn-on time
V
BO
— Breakover voltage (forward and reverse)
V
DRM
— Repetitive peak blocking voltage
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
•
•
•
•
•
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25
°C
unless otherwise specified.
Operating temperature range (T
J
) is -40
°C
to +125
°C.
Storage temperature range (T
S
) is -40
°C
to +125
°C.
Lead solder temperature is a maximum of +230
°C
for 10 seconds
maximum;
≥1/16"
(1.59 mm) from case.
The case temperature (T
C
) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1)
(2)
(3)
(4)
For either polarity of MT2 with reference to MT1
See Figure E3.1 for I
H
versus T
C
.
See Figure E3.4 and Figure E3.5 for i
T
versus v
T
.
See Figure E3.9 for surge ratings with specific durations.
http://www.teccor.com
+1 972-580-7777
E3 - 2
©2004 Teccor Electronics
Thyristor Product Catalog
Data Sheets
Quadrac
I
H
(1) (2)
I
TSM
(4) (8)
dv/dt(c)
(1) (5) (8)
dv/dt
(1)
t
gt
(6) (9)
I
2
t
I
GTM
di/dt
(9)
Volts/µSec
mAmps
MAX
40
40
40
50
50
50
50
50
60
60
60
60
60
60
60
60
60
60
70
70
70
70
70
Amps
60/50Hz
55/46
55/46
55/46
80/65
80/65
80/65
80/65
80/65
100/83
100/83
100/83
100/83
100/83
120/100
120/100
120/100
120/100
120/100
200/167
200/167
200/167
200/167
200/167
Volts/µSec
MIN
3
3
3
4
4
4
25
25
4
4
4
25
25
4
4
4
30
30
4
4
4
30
30
75
75
50
150
150
125
575
425
175
175
150
575
425
200
200
175
925
775
300
300
200
925
775
T
C
=
T
C
=
100 °C 125 °C
MIN
50
50
50
100
100
85
450
350
120
120
100
450
350
150
150
120
700
600
200
200
150
700
600
µSec
TYP
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
12.5
12.5
12.5
26.5
26.5
26.5
26.5
26.5
41
41
41
41
41
60
60
60
60
60
166
166
166
166
166
1.2
1.2
1.2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
50
50
50
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
100
100
100
100
100
Amps
2
Sec
Amps
Amps/µSec
See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at
specific operating temperature.
(6) See Figure E3.2 and Figure E3.3 for test circuit.
(7)
∆V
BO
= [+ V
BO
] - [- V
BO
]
(8) See Figure E3.7 and Figure E3.8 for maximum allowable case
temperature at maximum rated current.
(9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time
(10) T
C
= T
J
for test conditions in off state
(11) Maximum required value to ensure sufficient gate current
(12) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(5)
Electrical Isolation
All Teccor isolated
Quadrac
packages withstand a minimum high
potential test of 2500 V ac rms from leads to mounting tab over
the operating temperature range of the device. The following iso-
lation table shows standard and optional isolation ratings.
Electrical Isolation
from Leads to Mounting Tab *
V AC RMS
2500
4000
TYPE
Standard
Optional **
* UL Recognized File #E71639
**For 4000 V isolation, use “V” suffix in part number.
Thermal Resistance (Steady State)
R
θJC
[R
θJA
] °C/W (TYP)
TYPE
4A
6A
8A
10 A
15 A
Isolated TO-220
3.6 [50]
3.3
2.8
2.6
2.1
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 3
http://www.teccor.com
+1 972-580-7777
Quadrac
Data Sheets
20
Positive or Negative
Instantaneous On-state Current (i
T
) – Amps
18
2.0
INITIAL ON-STATE CURRENT
= 200 mA DC 4 A to 10 A
= 400 mA DC 15 A
T
C
= 25 ˚C
16
14
I
H
(T
C
= 25 ˚C)
1.5
6 A, 8 A, and 10 A
12
10
8
6
4
I
H
1.0
Ratio of
.5
4A
2
0
0
-40
-15
+25
+65
+105
+125
Case Temperature (T
C
) – ˚C
0
0.6
0.8
1.0
1.2
1.4
1.6
Positive or Negative
Instantaneous On-state Voltage (v
T
) – Volts
Figure E3.1 Normalized DC Holding Current versus Case Temperature
Figure E3.4 On-state Current versus On-state Voltage (Typical)
(4 A to 10 A)
Positive or Negative
Instantaneous On-state Current (i
T
) – Amps
90
80
R
L
T
C
= 25˚C
70
60
50
D.U.T.
MT2
15 A
40
30
20
10
0
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
120 V
60 Hz
T
V
C
C
T
= 0.1 µF
MT1
Positive or Negative
Instantaneous On-state Voltage (v
T
) – Volts
Figure E3.2 Test Circuit
Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)
120
V
C
+V
BO
∆V+
Maximum Allowable Ambient Temperature (T
A
) – ˚C
100
4A
80
60
40
∆V-
-V
BO
25
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RMS On-state Current [I
T(RMS)
] – Amps
Figure E3.3 Test Circuit Waveforms
Figure E3.6 Maximum Allowable Ambient Temperature versus
On-state Current
http://www.teccor.com
+1 972-580-7777
E3 - 4
©2004 Teccor Electronics
Thyristor Product Catalog
Data Sheets
Quadrac
120
110
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
˚
Average On-state Power Dissipation [P
D(AV)
] – Watts
130
4.0
Maximum Allowable Case Temperature (T
C
) – ˚C
3.0
4A
100
4A
90
2.0
80
70
1.0
60
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
0
0
1.0
2.0
3.0
4.0
5.0
0
.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RMS On-state Current [I
T(RMS)
] – Amps
RMS On-state Current [I
T(RMS)
] – Amps
Figure E3.7 Maximum Allowable Case Temperature versus
On-state Current (4 A)
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
18
120
110
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
Average On-state Power Dissipation [P
D(AV)
] – Watts
130
Maximum Allowable Case Temperature (T
C
) – ˚C
16
˚
14
12
100
6A
15 A
10
15 A
6 A to 10 A
90
8
80
8A
10 A
6
70
4
60
2
0
0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
0
2
4
6
8
10
12
14
16
0
RMS On-state Current [I
T(RMS)
] – Amps
RMS On-state Current [I
T(RMS)
] – Amps
Figure E3.8 Maximum Allowable Case Temperature versus
On-state Current (6 A to 15 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current
(6 A to 10 A and 15 A)
200
120
100
80
60
50
40
30
20
Percentage of V
BO
Change – %
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
NOTES:
1) Gates control may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned to
steady state rated value.
+4
+2
0
-2
-4
-6
-8
-40
-20
0
+20 +40 +60 +80 +100 +120 +140
15 A
10 A
10
8
6
5
4
3
2
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
8A
6A
4A
1
1
2
3 4 5 6 8 10
20
3040
60 80 100
200
300
600
1000
Surge Current Duration – Full Cycles
Junction Temperature (T
J
) – ˚C
Figure E3.12 Normalized diac V
BO
versus Junction Temperature
Figure E3.9 Peak Surge Current versus Surge Current Duration
©2004 Teccor Electronics
Thyristor Product Catalog
E3 - 5
http://www.teccor.com
+1 972-580-7777
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