MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8087M
BLOCK DIAGRAM
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 806- to 870-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>20W,
η
T
>25% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA20H8087M-E01
RA20H8087M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA20H8087M
MITSUBISHI ELECTRIC
1/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=806-825/ 851-870MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
40
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.5V, P
in
=25-70mW,
P
out
=1 to 25W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=20W (V
GG
control),
Load VSWR=8:1
V
DD
=12.5V, V
GG
=5V, P
in
=50mW
P
out
=20W(V
GG
control)
V
DD
=12.5V
P
in
=50mW
CONDITIONS
MIN
TYP
MAX
UNIT
MHz
W
%
806-825/ 851-870
20
25
-30
3:1
1
No parasitic oscillation
No degradation or
destroy
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change with out notice.
RA20H8087M
MITSUBISHI ELECTRIC
2/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
50
40
30
20
10
0
750
ρ
in
@P
out
=20W
η
T
@P
out
=20W
V
DD
=12.5V
P
in
=50mW
P
out
@V
GG
=5V
60
HARMONICS (dBc)
50
40
30
20
10
0
770
790 810 830 850
FREQUENCY f(MHz)
870
TOTAL EFFICIENCY
η
T
(%)
-20
-30
-40
-50
-60
-70
750
2
nd
@P
out
=20W
V
DD
=12.5V
P
in
=50mW
3
@P
out
=20W
rd
770
790 810 830 850
FREQUENCY f(MHz)
870
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=806MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
24
20
16
12
I
DD
f=764MHz,
V
DD
=12.5V,
V
GG
=5V
24
20
16
12
8
4
0
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
40
30
20
10
0
-15
8
4
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-15
I
DD
f=825MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
24
20
16
12
8
4
0
24
20
16
12
I
DD
f=851MHz,
V
DD
=12.5V,
V
GG
=5V
40
30
20
10
0
-15
8
4
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
24
20
16
12
I
DD
f=870MHz,
V
DD
=12.5V,
V
GG
=5V
40
30
20
10
0
-15
8
4
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
RA20H8087M
MITSUBISHI ELECTRIC
3/10
DRAIN CURRENT I
DD
(A)
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
P
out
f=764MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
P
out
f=806MHz,
V
GG
=5V,
P
in
=50mW
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
f=825MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
DD
P
out
f=851MHz,
V
GG
=5V,
P
in
=50mW
16
14
12
I
D D
P
out
16
14
12
10
8
6
4
2
0
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
P
out
f=870MHz,
V
GG
=5V,
P
in
=50mW
16
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
14
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
f=764MHz,
V
DD
=12.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=806MHz,
V
DD
=12.5V,
P
in
=50mW
12
I
D D
P
out
12
I
D D
P
out
10
8
6
4
2
0
5.5
10
8
6
4
2
0
RA20H8087M
MITSUBISHI ELECTRIC
4/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=825MHz,
V
DD
=12.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=851MHz,
V
DD
=12.5V,
P
in
=50mW
12
I
D D
P
out
I
DD
P
out
12
DRAIN CURRENT I
DD
(A)
10
8
6
4
2
0
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=870MHz,
V
DD
=12.5V,
P
in
=50mW
12
DRAIN CURRENT I
DD
(A)
I
DD
P
out
10
8
6
4
2
0
RA20H8087M
MITSUBISHI ELECTRIC
5/10
25 April 2003
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