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WEDPN16M64VR-100BI: 产品描述Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219; 产品类别存储存储; 文件大小258KB，共15页; 制造商White Electronic Designs Corporation; 官网地址http://www.wedc.com/

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WEDPN16M64VR-100BI概述

Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

WEDPN16M64VR-100BI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	White Electronic Designs Corporation
包装说明	BGA, BGA219,16X16,50
Reach Compliance Code	unknown
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
备用内存宽度	32
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B219
长度	32 mm
内存密度	1073741824 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	219
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	16MX64
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA219,16X16,50
封装形状	RECTANGULAR
封装形式	GRID ARRAY
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	2.2 mm
自我刷新	YES
最大待机电流	0.24 A
最大压摆率	0.75 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	1.27 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	25 mm

WEDPN16M64VR-100BI相似产品对比

	WEDPN16M64VR-100BI	WEDPN16M64VR-100BC	WEDPN16M64VR-125BM	WEDPN16M64VR-125BI	WEDPN16M64VR-125BC	WEDPN16M64VR-66BI	WEDPN16M64VR-66BM	WEDPN16M64VR-133BC	WEDPN16M64VR-133BI	WEDPN16M64VR-100BM
描述	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 7.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 7.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation
包装说明	BGA, BGA219,16X16,50	BGA, BGA219,16X16,50	32 X 25 MM, PLASTIC, BGA-219	BGA, BGA219,16X16,50	BGA, BGA219,16X16,50	BGA, BGA219,16X16,50	32 X 25 MM, PLASTIC, BGA-219	BGA, BGA219,16X16,50	BGA, BGA219,16X16,50	32 X 25 MM, PLASTIC, BGA-219
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow	unknown
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	6 ns	6 ns	5.8 ns	5.8 ns	5.8 ns	7.5 ns	7.5 ns	5.4 ns	5.4 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO REFRESH
备用内存宽度	32	32	32	32	32	32	32	32	32	32
最大时钟频率 (fCLK)	100 MHz	100 MHz	125 MHz	125 MHz	125 MHz	66 MHz	66 MHz	133 MHz	133 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219
长度	32 mm	32 mm	32 mm	32 mm	32 mm	32 mm	32 mm	32 mm	32 mm	32 mm
内存密度	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bi	1073741824 bi	1073741824 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	64	64	64	64	64	64	64	64	64	64
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	219	219	219	219	219	219	219	219	219	219
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	125 °C	85 °C	70 °C	85 °C	125 °C	70 °C	85 °C	125 °C
最低工作温度	-40 °C	-	-55 °C	-40 °C	-	-40 °C	-55 °C	-	-40 °C	-55 °C
组织	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
封装等效代码	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50	BGA219,16X16,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
座面最大高度	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm	2.2 mm
最大待机电流	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A
最大压摆率	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA	0.75 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	MILITARY	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	MILITARY	COMMERCIAL	INDUSTRIAL	MILITARY
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	25 mm	25 mm	25 mm	25 mm	25 mm	25 mm	25 mm	25 mm	25 mm	25 mm
自我刷新	YES	YES	-	YES	YES	YES	-	YES	YES	-

WEDPN16M64VR-100BI

WEDPN16M64VR-100BI概述

WEDPN16M64VR-100BI规格参数

WEDPN16M64VR-100BI相似产品对比

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