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B1S

产品描述BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小384KB,共2页
制造商YEA SHIN TECHNOLOGY CO.,LTD
官网地址http://www.yeashin.com/
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B1S概述

BRIDGE RECTIFIER DIODE

桥式整流二极管

B1S规格参数

参数名称属性值
状态ACTIVE
二极管类型BRIDGE RECTIFIER DIODE

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DATA SHEET
SEMICONDUCTOR
B1S THRU B10S
MINI SURFACE MOUNT GLASS PASSIVATED
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
100 to 1000Volts
CURRENT
0.5 Amperes
FEATURES
•Plastic
material used carries Underwriters
Laboratory recognition 94V-O
•Low
leakage
•Surge
overload rating-- 30 amperes peak
•Ideal
for printed circuit board
•Exceeds
environmental standards of MIL-S-19500
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
MDI Unit:inch(mm)
DI
+
.157(4.0)
.142(3.6)
~
~
.008(0.2)
.275(7.0)
MAX
.043(1.1)
.027(0.7)
.106(2.7)
.090(2.3)
.031(0.8)
.019(0.5)
.193(4.9)
.177(4.5)
MECHANICAL DATA
•Case:
Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
•Terminals:
Lead solderable per MIL-STD-202, Method 208.
•Polarity:
Polarity symbols molded or marking on body.
•Mounting
Position: Any.
•Weight:
0.008 ounce, 0.22 gram.
.106(2.7)
.090(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current TA=40℃
TA=25℃(Note 3)
Peak Forward Surge Current:8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I2t Rating for fusing (t<8.35ms)
Maximum Forward Voltage Drop per Bridge Element at 0.5A
Maximum DC Reverse Current TJ=25℃
at Rated DC Blocking Voltage TJ=125℃
Typical Junction capacitance (Note 1)
Typical thermal resistance per leg (Note2)
Operating Junction and Storage Temperature Range
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
SYMBOL
VRRM
VRMS
VDC
IAV
IFSM
I2t
VF
IR
CJ
Rθ A J
Rθ L J
TJ, TSTG
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0. 5
0.8*
35
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNITS
V
V
V
A
A
A2t
V
uA
pF
℃/W
3.735
1.0
5.0
500
25
85
20
-55 to +150
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25oC
http://www.yeashin.com
1
REV.02 20120305

B1S相似产品对比

B1S B10S B2S B4S B6S B8S
描述 BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

 
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