SUF2001
Dual N and P-channel Trench MOSFET
30V Dual N- and P-channel Trench MOSFET
Features
Low V
GS(th)
: V
GS(th)
=1.0~3.0V
Small footprint due to small package
Low R
GDS(on)
: N-ch, R
DS(on)
=24mΩ (@ V
GS=
10V, I
D=
2.9A)
P-ch, R
DS(on)
=66mΩ (@ V
GS=
-10V, I
D
=-2.7A)
Ordering Information
Part Number
Marking Code
Package
SOP-8
SUF2001
SUF2001
SOP-8
Marking Information
Column 1: Device Code
Column 2: Production Information
-. Y: Year Code
-. WW: Week Code
SUF2001
YWW
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
Total power dissipation
**
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
(T
A
=25C unless otherwise noted)
Rating
Symbol
N-Ch
V
DSS
V
GSS
I
D
I
DP
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
R
th(J-A)
5.8
②
72
②
5.8
3.4
150
-55~150
62.5
5.8
23.2
2
-5.3
⑥
33
⑥
-5.3
1.6
30
20
-5.3
-21.2
P-Ch
-30
V
V
A
A
W
A
mJ
A
mJ
C
C/W
Unit
Thermal resistance junction to ambient
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
1 of 13
SUF2001
N-channel MOSFET Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
③④
Rise time
③④
Turn-off delay time
③④
Fall time
③④
Total gate charge
③④
Gate-source charge
③④
Gate-drain charge
③④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V, V
GS
=5V
I
D
=5.8A
V
DS
=15V, I
D
=5.8A
R
G
=10Ω
V
GS
=0V, V
DS
=10V,
f=1MHz
Test Condition
I
D
=250A, V
GS
=0
I
D
=250A, V
DS
= V
GS
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=20V
V
GS
=10V, I
D
=2.9A
V
GS
=5.0V, I
D
=2.9A
V
DS
=5V, I
D
=5.8A
Min.
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
28
12
370
60
36
1.2
1.1
2.5
1.1
4.2
0.9
1.4
Max.
-
3.0
1
100
30
34
-
560
90
54
-
-
-
-
6.3
1.4
2.1
nC
ns
pF
Unit
V
V
A
nA
m
m
S
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current(Pulsed)
Forward voltage
④
①
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1.5A
I
s
=1.5A, di
S
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
Max
1.5
6.0
1.2
-
-
Unit
A
V
ns
uC
Reverse recovery time
Reverse recovery charge
Note ;
①
Repetitive Rating : Pulse width limited by maximum junction temperature
②
L=3.4mH, I
AS
=5.8A, V
DD
=15V, R
G
=25Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④
Essentially independent of operating temperature
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
2 of 13
SUF2001
P-channel MOSFET Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
⑧
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
⑦⑧
Rise time
⑦⑧
Turn-off delay time
Fall time
⑦⑧
Total gate charge
⑦⑧
Gate-source charge
⑦⑧
Gate-drain charge
⑦⑧
⑦⑧
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250A, V
GS
=0
I
D
=250A, V
DS
=V
GS
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=20V
V
GS
=-10V, I
D
=-2.7A
V
GS
=-5.0V, I
D
=-2.7A
V
DS
=-5V, I
D
=-5.3A
V
GS
=0V, V
DD
=-10V,
f=1MHz
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
66
77
11
390
97
37
1.2
1.1
2.5
1.1
4.7
1.4
1.7
Max.
-
-3.0
1
100
72
83
-
590
150
60
-
-
-
-
7.0
2.1
2.5
Unit
V
V
A
nA
m
m
S
pF
V
DS
=-15V, I
D
=-5.3A
R
G
=10Ω
-
-
-
-
ns
V
DS
=-15V, V
GS
=-5V
I
D
=-5.3A
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current (Pulsed)
⑤
Forward voltage
⑧
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=-1.5A
I
s
=-1.5A
di
S
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
Max
-1.5
-6.0
-1.2
-
-
Unit
A
V
ns
uC
Note ;
⑤
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥
L=2.0mH, I
AS
=-5.0A, V
DD
=-15V, R
G
=25Ω
⑦
Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
⑧
Essentially independent of operating temperature
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
3 of 13
SUF2001
N-CH Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
-
m
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
4 of 13
SUF2001
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
C
C
Fig. 9 I
D
- T
a
Fig. 10 Safe Operating Area
*
t
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
5 of 13
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