Preliminary
Datasheet
RJK4512DPE
450V - 14A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.43
typ. (at I
D
= 7 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0462EJ0300
Rev.3.00
Feb 12, 2013
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1. Gate
2. Drain
3. Source
4. Drain
D
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
ch-c
Tch
Tstg
Ratings
450
30
14
42
14
42
3
0.5
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0462EJ0300 Rev.3.00
Feb 12, 2013
Page 1 of 6
RJK4512DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
450
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.43
1100
125
15
30
25
78
17
29
5.5
13
0.89
280
Max
—
1
0.1
4.5
0.51
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 450 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 7 A
V
GS
= 10 V
R
L
= 32.1
Rg = 10
V
DD
= 360 V
V
GS
= 10 V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0
Note4
I
F
= 14 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0462EJ0300 Rev.3.00
Feb 12, 2013
Page 2 of 6
RJK4512DPE
Preliminary
Main Characteristics
Maximum
Safe
Operation
Area
100
Typical Output Characteristics
20
Pulse
Test
Ta =
25°C
10
Drain
Current I
D
(A)
10
Drain
Current I
D
(A)
10
P
W
μ
s
16
6.2 V
7V
10
V
6V
=
0
μ
s
1
Operation in
this
area
is limited by
R
DS(on)
12
5.8 V
5.6 V
0.1
8
5.4 V
4
0.01
Tc =
25°C
1
shot
1
10
100
1000
5.2 V
V
GS
= 5 V
0
2
4
6
8
10
0.001
0.1
0
Drain to Source
Voltage V
DS
(V)
Drain to Source
Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs.
Drain
Current
(Typical)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
DS
=
10
V
Pulse
Test
10
V
GS
=
10
V
Ta =
25°C
Pulse
Test
Drain
Current I
D
(A)
10
1
Tc = 75°C
25°C
1
0.1
−25°C
0.01
0
2
4
6
8
10
0.1
1
10
100
Gate to Source
Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
(Typical)
V
GS
=
10
V
Pulse
Test
I
D
=
14 A
0.8
0.6
7
A
0.4
0.2
0
−25
Drain
Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery
Time
(Typical)
1000
1.0
Reverse Recovery
Time
trr (ns)
1.2
3.5 A
100
di
/
dt
=
100 A
/
μs
V
GS
=
0,
Ta =
25°C
10
0.1
1
10
100
0
25
50
75
100 125 150
Case Temperature Tc
(°C)
Reverse Drain
Current I
DR
(A)
R07DS0462EJ0300 Rev.3.00
Feb 12, 2013
Page 3 of 6
RJK4512DPE
Typical Capacitance vs.
Drain to Source
Voltage
(Typical)
Drain to Source
Voltage V
DS
(V)
10000
Preliminary
Dynamic
Input Characteristics
(Typical)
I
D
=
14 A
Ta =
25
°C
V
DD
=
360
V
200
V
100
V
V
GS
Capacitance C
(pF)
1000
Ciss
600
12
100
Coss
400 V
DS
8
10
V
GS
=
0
f =
1
MHz
Ta =
25°C
100
Crss
200
V
DD
=
360
V
200
V
100
V
0
10
20
30
4
1
0
0
200
0
40
Drain to Source
Voltage V
DS
(V)
Gate
Charge Qg
(nC)
40
Gate to Source
Cutoff Voltage V
GS(off)
(V)
Reverse Drain
Current vs.
Source to Drain
Voltage
(Typical)
Reverse Drain
Current I
DR
(A)
V
GS
=
0
Ta =
25
°C
Pulse
Test
Gate to Source
Cutoff Voltage
vs. Case Temperature
(Typical)
5
V
DS
=
10
V
30
4
3
20
I
D
=
10 mA
1 mA
0.1 mA
2
1
10
0
0
0.4
0.8
1.2
1.6
2.0
0
−25
0
25
50
75
100 125 150
Source to Drain
Voltage V
SD
(V)
Case Temperature
Tc
(°C)
R07DS0462EJ0300 Rev.3.00
Feb 12, 2013
Page 4 of 6
Gate to Source
Voltage V
GS
(V)
800
16
RJK4512DPE
Preliminary
Normalized Transient Thermal Impedance
vs.
Pulse
Width
3
Normalized Transient Thermal Impedance
γ
s
(t)
1
D=1
0.5
0.3
0.2
0.1
0.1
0.0
5
2
0.0
0.01
1shot
pulse
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 3.57°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.03
10
μ
100
μ
1m
10 m
Pulse
Width
PW (s)
100 m
1
10
Switching Time Test
Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10
V
V
DD
= 300
V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
t
f
90%
td(on)
tr
R07DS0462EJ0300 Rev.3.00
Feb 12, 2013
Page 5 of 6
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