TXC CORPORATION
4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan
TEL : 886-2-28941202 , 886-2-2895-2201
FAX : 886-2-28941206 , 886-2-2895-6207
www.txccorp.com
SPECIFICATION FOR APPROVAL
Customer
Product Type
TXC PN
Version
Customer PN
:
: MOSFET
: MA6004D10000000
: A1
:
TXC Sales / Rep.
Date of Issue
: Rich Cheng
: 2011-12-14
Customer Signature :
(1) TXC requires on copy returned with signature and title of authorized individual that signifies acceptance of the
attached specifications.
(2) Orders received and accepted by TXC after return of signed copy of specification witll be produced per these
specifications
(3) Any changes to these specification must be agreed upon by both parties and new version of the Product Specification
Sheet will be issued.
(4) Any issuance of purchase order prior to consigning back the Approval page of “Specification Sheets” from customers
will be regarded as the agreements o the contents of these specifications.
RoHS Compliant
FMT-DOC024
Issue Date : 12.15’08 Ver.E
TXC CORPORATION
4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan
TEL : 886-2-28941202 , 886-2-2895-2201
FAX : 886-2-28941206 , 886-2-2895-6207
www.txccorp.com
PRODUCT SPECIFICATION SHEET
Product Type
: MOSFET
Product Description : N-ch 60V TO-252
TXC PN
Version
: MA6004D10000000
: A1
PE / RD
QA
MFG
2011/12/14
2011/12/14
2011/12/14
Note :
(1) Lead Free Pdoducts are “Directive 2002/95/EC of The European Parliament of 27 January 2003 on the restriction of
the use of certain hazardous substance (RoHS) in the electrical and electronic equipment” Complaint ( Attachment :
SGS Test Report )
(2) Revision “Sx” is for engineering sample only. PE/RD’s approval required.
(3) Revision “Ax” is production ready. PE/RD, QA and MFG’s approval required.
RoHS Compliant
FMT-DOC024
Issue Date : 12.15’08 Ver.E
TXC CORPORATION
TXC P/N : MA6004D10000000
REVISION : A1
Rev
A1
Revise page
ALL
Revise contents
Initial Released
Date
2011-12-14
Ref. No.
N/A
Reviser
Simon Wang
FMT-DOC024
Issue Date : 12.15’08 Ver.E
MA6004D10000000
N-Ch 60V Fast Switching MOSFETs
General Description
The MA6004D is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The MA6004D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BVDSS
60V
Applications
RDSON
30mΩ
ID
23A
High Frequency Point-of-Load Synchronous
Buck Converter.
Networking DC-DC Power System
Load Switch
TO252 Pin Configuration
D
Absolute Maximum Ratings
G
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
D
S
Rating
60
±20
23
15
5.6
4.5
46
34.5
22.6
34.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
62
3.6
Unit
℃/W
℃/W
Rev A.01 D121109
TXC CORPORATION , All Rights Reserved
.
1
Rev A.01 D020210
MA6004D10000000
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=15A
V
GS
=4.5V , I
D
=10A
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25℃
V
DS
=48V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=15A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=48V , V
GS
=4.5V , I
D
=12A
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
V
DD
=30V , V
GS
=10V , R
G
=3.3Ω,
I
D
=10A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.063
25
30
---
-5.24
---
---
---
17
3.2
12.6
3.2
6.3
8
14.2
24.4
4.6
1378
86
64
Max.
---
---
30
38
2.5
---
1
5
±100
---
6.4
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=15A
Min.
15.2
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
23
46
1.2
Unit
A
A
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=22.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Typical Characteristics
TXC CORPORATION , All Rights Reserved
.
2
Rev A.01 D020210
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