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MA24F41

产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, TMINIP2-F1, 2 PIN
产品类别分立半导体    二极管   
文件大小369KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准  
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MA24F41概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, TMINIP2-F1, 2 PIN

MA24F41规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Panasonic(松下)
包装说明R-PDSO-F2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流20 A
元件数量1
端子数量2
最高工作温度150 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压400 V
最大反向恢复时间0.045 µs
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间10

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This product complies with RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA24F41
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic (t
rr
= 15 nsec typ.)
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
1
2.40
±0.10
Unit: mm
0.15
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak reverse voltage
Forward current
*1
2
1.75
±0.05
3.80
±0.05
4.70
±0.10
Symbol
V
RRM
V
RSM
I
F
I
FSM
T
j
T
stg
Non-repetitive peak reverse surge voltage
Non-repetitive peak forward surge current
*2
Junction temperature
Storage temperature
–40 to +150
–40 to +150
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
V
F
C
t
t
rr
di
Symbol
I
RRM
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
400
1.0
20
400
Unit
V
V
0.450
±0.05
A
°C
°C
1 : Anode
2 : Cathode
0 to 0.03
A
0.90MAX
TMiniP2-F1 Package
Marking Symbol: G2
Conditions
Min
Typ
1.0
30
15
Max
1.3
20
0 to 0.40
Unit
V
mA
pF
ns
tin
isc
Terminal capacitance
on
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
50
an
ce
Reverse recovery time
*
/D
ue
I
F
= 800 mA
V
RRM
= 400 V
V
R
= 0 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
45
50
Pl
t
rr
D.U.T
5.5
I
F
I
R
0.25
×
I
R
Publication date: February 2007
SKJ00018AED
1

 
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