TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF1030,35,40,45,50CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
MBRF10
30CT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
10
120
2
50
125
-55~+150
28
31.5
35
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
V
MBRF10
35CT
MBRF10
40CT
MBRF10
45CT
MBRF10
50CT
Unit
TO-220F
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBRF1030CT
MBRF1035CT
Reverse voltage
V
(BR)
MBRF1040CT
MBRF1045CT
MBRF1050CT
MBRF1030CT
MBRF1035CT
Reverse current
I
R
MBRF1040CT
MBRF1045CT
MBRF1050CT
MBRF1030CT
MBRF1035CT
V
F(1)
MBRF1040CT
MBRF1045CT
Forward voltage
MBRF1050CT
MBRF1030CT
MBRF1035CT
V
F(2)
MBRF1040CT
MBRF1045CT
MBRF1050CT
Typical total capacitance
C
tot
MBRF1030-50CT
V
R
=4V,f=1MHz
150
0.95
pF
I
F
=10A
0.84
0.8
V
I
F
=5A
0.7
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
0.1
mA
I
R
=0.1mA
Test conditions
Min
30
35
40
45
50
V
Typ
Max
Unit
A,Nov,2010
嵌入式系统
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